Mesoscopic Spin Hall Effect in Multiprobe Ballistic Spin-Orbit Coupled Semiconductor Bridges

We predict that unpolarized charge current driven through the longitudinal leads attached to ballistic quantum-coherent two-dimensional electron gas (2DEG) in semiconductor heterostructure will induce a {\em pure} spin current, which is not accompanied by any net charge flow, in the transverse voltage probes. Its magnitude can be tuned by the Rashba spin-orbit (SO) interaction and, moreover, it is resilient to weak spin-independent scattering off impurities within the metallic diffusive regime. While the polarization vector of the spin transported through the transverse leads is not orthogonal to the plane of 2DEG, we demonstrate that only two components (out-of-plane and longitudinal) of the transverse spin current are signatures of the spin Hall effect in four-probe Rashba spin-split semiconductor nanostructures. The linear response spin Hall current, obtained from the multiprobe Landauer-B\" uttiker scattering formalism generalized for quantum transport of spin, is the Fermi-surface determined nonequilibrium quantity whose scaling with the 2DEG size $L$ reveals the importance of processes occurring on the spin precession {\em mesoscale} $L_{\rm SO}$ (on which spin precesses by an angle $\pi$)--the out-of-plane component of the transverse spin current exhibits quasioscillatory behavior for $L \lesssim L_{\rm SO}$ (attaining the maximum value in 2DEGs of the size $L_{\rm SO} \times L_{\rm SO}$), while it reaches the asymptotic value in the macroscopic regime $L \gg L_{\rm SO}$. Furthermore, these values of the spin Hall current can be manipulated by the measuring geometry defined by the attached leads.Comment: 12 pages, 6 color EPS figures; expanded discussion to emphasize crucial role played by processes on the spin precession mesoscal

Anisotropic splitting of intersubband spin plasmons in quantum wells with bulk and structural inversion asymmetry

In semiconductor heterostructures, bulk and structural inversion asymmetry and spin-orbit coupling induce a k-dependent spin splitting of valence and conduction subbands, which can be viewed as being caused by momentum-dependent crystal magnetic fields. This paper studies the influence of these effective magnetic fields on the intersubband spin dynamics in an asymmetric n-type GaAs/AlGaAs quantum well. We calculate the dispersions of intersubband spin plasmons using linear response theory. The so-called D'yakonov-Perel' decoherence mechanism is inactive for collective intersubband excitations, i.e., crystal magnetic fields do not lead to decoherence of spin plasmons. Instead, we predict that the main signature of bulk and structural inversion asymmetry in intersubband spin dynamics is a three-fold, anisotropic splitting of the spin plasmon dispersion. The importance of many-body effects is pointed out, and conditions for experimental observation with inelastic light scattering are discussed.Comment: 8 pages, 6 figure

Electron Spin Decoherence in Bulk and Quantum Well Zincblende Semiconductors

A theory for longitudinal (T1) and transverse (T2) electron spin coherence times in zincblende semiconductor quantum wells is developed based on a non-perturbative nanostructure model solved in a fourteen-band restricted basis set. Distinctly different dependences of coherence times on mobility, quantization energy, and temperature are found from previous calculations. Quantitative agreement between our calculations and measurements is found for GaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb quantum wells.Comment: 11 pages, 3 figure

Effect of bulk inversion asymmetry on the Datta-Das transistor

A model of the Datta-Das spin field-effect transistor is presented which, in addition to the Rashba interaction, takes into account the influence of bulk inversion asymmetry of zinc-blende semiconductors. In the presence of bulk inversion asymmetry, the conductance is found to depend significantly on the crystallographic orientation of the channel. We determine the channel direction optimal for the observation of the Datta-Das effect in GaAs and InAs-based devices.Comment: 4 pages, Revtex4, 4 EPS figure

Two-photon spin injection in semiconductors

A comparison is made between the degree of spin polarization of electrons excited by one- and two-photon absorption of circularly polarized light in bulk zincblende semiconductors. Time- and polarization-resolved experiments in (001)-oriented GaAs reveal an initial degree of spin polarization of 49% for both one- and two-photon spin injection at wavelengths of 775 and 1550 nm, in agreement with theory. The macroscopic symmetry and microscopic theory for two-photon spin injection are reviewed, and the latter is generalized to account for spin-splitting of the bands. The degree of spin polarization of one- and two-photon optical orientation need not be equal, as shown by calculations of spectra for GaAs, InP, GaSb, InSb, and ZnSe using a 14x14 k.p Hamiltonian including remote band effects. By including the higher conduction bands in the calculation, cubic anisotropy and the role of allowed-allowed transitions can be investigated. The allowed-allowed transitions do not conserve angular momentum and can cause a high degree of spin polarization close to the band edge; a value of 78% is calculated in GaSb, but by varying the material parameters it could be as high as 100%. The selection rules for spin injection from allowed-allowed transitions are presented, and interband spin-orbit coupling is found to play an important role.Comment: 12 pages including 7 figure

Low field hysteresis in disordered ferromagnets

We analyze low field hysteresis close to the demagnetized state in disordered ferromagnets using the zero temperature random-field Ising model. We solve the demagnetization process exactly in one dimension and derive the Rayleigh law of hysteresis. The initial susceptibility a and the hysteretic coefficient b display a peak as a function of the disorder width. This behavior is confirmed by numerical simulations d=2,3 showing that in limit of weak disorder demagnetization is not possible and the Rayleigh law is not defined. These results are in agreement with experimental observations on nanocrystalline magnetic materials.Comment: Extended version, 18 pages, 5 figures, to appear in Phys. Rev.

Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin splitting in high mobility GaAs/AlGaAs devices

We suggest an approach for characterizing the zero-field spin splitting of high mobility two-dimensional electron systems, when beats are not readily observable in the Shubnikov-de Haas effect. The zero-field spin splitting and the effective magnetic field seen in the reference frame of the electron is evaluated from a quantitative study of beats observed in radiation-induced magnetoresistance oscillations.Comment: 4 pages, 4 color figure

Is the magnetic field necessary for the Aharonov-Bohm effect in mesoscopics?

A new class of topological mesoscopic phenomena in absence of external magnetic field (meso-nucleo-spinics)is predicted, which is based on combined action of the nonequilibrium nuclear spin population and charge carriers spin-orbit interaction . As an example, we show that Aharonov-Bohm like oscillations of the persistent current in GaAs/AlGaAs based mesoscopic rings may exist, in the absence of the external magnetic field, provided that a topologically nontrivial strongly nonequilibrium nuclear spin population is created. This phenomenon is due to the breaking, via the spin-orbit coupling, of the clock wise - anti clock wise symmetry of the charge carriers momentum, which results in the oscillatory in time persistent current.Comment: 14 pages, Late