High-quality quantum point contact in two-dimensional GaAs (311)A hole system

We studied ballistic transport across a quantum point contact (QPC) defined in a high-quality, GaAs (311)A two-dimensional (2D) hole system using shallow etching and top-gating. The QPC conductance exhibits up to 11 quantized plateaus. The ballistic one-dimensional subbands are tuned by changing the lateral confinement and the Fermi energy of the holes in the QPC. We demonstrate that the positions of the plateaus (in gate-voltage), the source-drain data, and the negative magneto-resistance data can be understood in a simple model that takes into account the variation, with gate bias, of the hole density and the width of the QPC conducting channel

The Role of Multilevel Landau-Zener Interference in Extreme Harmonic Generation

Motivated by the observation of multiphoton electric dipole spin resonance processes in InAs nanowires, we theoretically study the transport dynamics of a periodically driven five-level system, modeling the level structure of a two-electron double quantum dot. We show that the observed multiphoton resonances, which are dominant near interdot charge transitions, are due to multilevel Landau-Zener-Stuckelberg-Majorana interference. Here a third energy level serves as a shuttle that transfers population between the two resonant spin states. By numerically integrating the master equation we replicate the main features observed in the experiments: multiphoton resonances (as large as 8 photons), a robust odd-even dependence, and oscillations in the electric dipole spin resonance signal as a function of energy level detuning

Field Tuning the G-Factor in InAs Nanowire Double Quantum Dots

We study the effects of magnetic and electric fields on the g-factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade regime. Rotations of single spins are driven using electric-dipole spin resonance. The g-factors are extracted from the spin resonance condition as a function of the magnetic field direction, allowing determination of the full g-tensor. Electric and magnetic field tuning can be used to maximize the g-factor difference and in some cases altogether quench the EDSR response, allowing selective single spin control.Comment: Related papers at http://pettagroup.princeton.ed

Radio frequency charge sensing in InAs nanowire double quantum dots

We demonstrate charge sensing of an InAs nanowire double quantum dot (DQD) coupled to a radio frequency (rf) circuit. We measure the rf signal reflected by the resonator using homodyne detection. Clear single dot and DQD behavior are observed in the resonator response. rf-reflectometry allows measurements of the DQD charge stability diagram in the few-electron regime even when the dc current through the device is too small to be measured. For a signal-to-noise ratio of one, we estimate a minimum charge detection time of 350 microseconds at interdot charge transitions and 9 microseconds for charge transitions with the leads.Comment: Related papers at http://pettagroup.princeton.ed

A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.Comment: Related papers at http://pettagroup.princeton.ed