1,330 research outputs found
Evidence for electron-phonon interaction in FeMSb (M=Co, Cr) single crystals
We have measured polarized Raman scattering spectra of the
FeCoSb and FeCrSb (00.5)
single crystals in the temperature range between 15 K and 300 K. The highest
energy symmetry mode shows significant line asymmetry due to phonon
mode coupling width electronic background. The coupling constant achieves the
highest value at about 40 K and after that it remains temperature independent.
Origin of additional mode broadening is pure anharmonic. Below 40 K the
coupling is drastically reduced, in agreement with transport properties
measurements. Alloying of FeSb with Co and Cr produces the B mode
narrowing, i.e. weakening of the electron-phonon interaction. In the case of
A symmetry modes we have found a significant mode mixing
Anisotropy in the magnetic and electrical transport properties of Fe1-xCrxSb2
We have investigated anisotropy in magnetic and electrical transport
properties of Fe1-xCrxSb2 (0<= x <=1) single crystals. The magnetic ground
state of the system evolves from paramagnetic to antiferromagnetic with gradual
substitution of Fe with Cr. Anisotropy in electrical transport diminishes with
increased Cr substitution and fades away by x=0.5. We find that the variable
range hopping (VRH) conduction mechanism dominates at low temperatures for
0.4<= x <=0.75.Comment: 5 pages, 6 figure
Anisotropy in magnetic and transport properties of Fe1-xCoxSb2
Anisotropic magnetic and electronic transport measurements were carried out
on large single crystals of Fe1-xCoxSb2 (0<= x <=1). The semiconducting state
of FeSb2 evolves into metallic and weakly ferromagnetic by substitution of Fe
with Co for x<0.5. Further doping induces structural transformation from
orthorhombic Pnnm structure of FeSb2 to monoclinic P21/c structure of CoSb2
where semiconducting and diamagnetic ground state is restored again. Large
magnetoresistance and anisotropy in electronic transport were observed.Comment: 7 pages, 6 figure
UWB System Performance Improvement Using Smart Interference Rejection Filter
In this paper we proposed a smart interference rejection filter in TH-PPM UWB system, which improves the system\'s error probability for an order of magnitude in case of high power OFDM interference. The smart filter is based on an adaptive transversal filter. Based on the fulfillment of certain conditions, the filter activates or deactivates some parts of it
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