Ultra Fast Nonlinear Optical Tuning of Photonic Crystal Cavities

We demonstrate fast (up to 20 GHz), low power (5 $\mu W$) modulation of photonic crystal (PC) cavities in GaAs containing InAs quantum dots. Rapid modulation through blue-shifting of the cavity resonance is achieved via free carrier injection by an above-band picosecond laser pulse. Slow tuning by several linewidths due to laser-induced heating is also demonstrated

Spectroscopy of nanoscopic semiconductor rings

Making use of self-assembly techniques, we demonstrate the realization of nanoscopic semiconductor quantum rings in which the electronic states are in the true quantum limit. We employ two complementary spectroscopic techniques to investigate both the ground states and the excitations of these rings. Applying a magnetic field perpendicular to the plane of the rings, we find that when approximately one flux quantum threads the interior of each ring, a change in the ground state from angular momentum $\ell = 0$ to $\ell = -1$ takes place. This ground state transition is revealed both by a drastic modification of the excitation spectrum and by a change in the magnetic field dispersion of the single-electron charging energy

Radiative cascades in charged quantum dots

We measured, for the first time, two photon radiative cascades due to sequential recombination of quantum dot confined electron hole pairs in the presence of an additional spectator charge carrier. We identified direct, all optical cascades involving spin blockaded intermediate states, and indirect cascades, in which non radiative relaxation precedes the second recombination. Our measurements provide also spin dephasing rates of confined carriers.Comment: 4 pages, 3 figure

Growth and optical properties of self-assembled InGaAs Quantum Posts

We demonstrate a method to grow height controlled, dislocation-free InGaAs quantum posts (QPs) on GaAs by molecular beam epitaxy (MBE) which is confirmed by structural investigations. The optical properties are compared to realistic 8-band k.p calculations of the electronic structure which fully account for strain and the structural properties of the QP. Using QPs embedded in n-i-p junctions we find wide range tunability of the interband spectrum and giant static dipole moments.Comment: Proccedings paper for MSS-13, 7 pages, 4 figure

Semiconductor quantum dot - a quantum light source of multicolor photons with tunable statistics

We investigate the intensity correlation properties of single photons emitted from an optically excited single semiconductor quantum dot. The second order temporal coherence function of the photons emitted at various wavelengths is measured as a function of the excitation power. We show experimentally and theoretically, for the first time, that a quantum dot is not only a source of correlated non-classical monochromatic photons but is also a source of correlated non-classical \emph{multicolor} photons with tunable correlation properties. We found that the emitted photon statistics can be varied by the excitation rate from a sub-Poissonian one, where the photons are temporally antibunched, to super-Poissonian, where they are temporally bunched.Comment: 4 pages, 2 figure

Polarization memory in single Quantum Dots

We measured the polarization memory of excitonic and biexcitonic optical transitions from single quantum dots at either positive, negative or neutral charge states. Positive, negative and no circular or linear polarization memory was observed for various spectral lines, under the same quasi-resonant excitation below the wetting layer band-gap. We developed a model which explains both qualitatively and quantitatively the experimentally measured polarization spectrum for all these optical transitions. We consider quite generally the loss of spin orientation of the photogenerated electron-hole pair during their relaxation towards the many-carrier ground states. Our analysis unambiguously demonstrates that while electrons maintain their initial spin polarization to a large degree, holes completely dephase.Comment: 6 pages, 4 figure

Coulomb interactions in single, charged self-assembled quantum dots: radiative lifetime and recombination energy

We present results on the charge dependence of the radiative recombination lifetime, Tau, and the emission energy of excitons confined to single self-assembled InGaAs quantum dots. There are significant dot-to-dot fluctuations in the lifetimes for a particular emission energy. To reach general conclusions, we present the statistical behavior by analyzing data recorded on a large number of individual quantum dots. Exciton charge is controlled with extremely high fidelity through an n-type field effect structure, providing access to the neutral exciton (X0), the biexciton (2X0) and the positively (X1+) and negatively (X1-) charged excitons. We find significant differences in the recombination lifetime of each exciton such that, on average, Tau(X1-) / Tau(X0) = 1.25, Tau(X1+) / Tau(X0) = 1.58 and Tau(2X0) / Tau(X0) = 0.65. We attribute the change in lifetime to significant changes in the single particle hole wave function on charging the dot, an effect more pronounced on charging X0 with a single hole than with a single electron. We verify this interpretation by recasting the experimental data on exciton energies in terms of Coulomb energies. We show directly that the electron-hole Coulomb energy is charge dependent, reducing in value by 5-10% in the presence of an additional electron, and that the electron-electron and hole-hole Coulomb energies are almost equal.Comment: 8 pages, 7 figures, submitted to Phys. Rev.