Planetesimal disk evolution driven by embryo-planetesimal gravitational scattering

The process of gravitational scattering of planetesimals by a massive protoplanetary embryo is explored theoretically. We propose a method to describe the evolution of the disk surface density, eccentricity, and inclination caused by the embryo-planetesimal interaction. It relies on the analytical treatment of the scattering in two extreme regimes of the planetesimal epicyclic velocities: shear-dominated (dynamically ``cold'') and dispersion-dominated (dynamically ``hot''). In the former, planetesimal scattering can be treated as a deterministic process. In the latter, scattering is mostly weak because of the large relative velocities of interacting bodies. This allows one to use the Fokker-Planck approximation and the two-body approximation to explore the disk evolution. We compare the results obtained by this method with the outcomes of the direct numerical integrations of planetesimal orbits and they agree quite well. In the intermediate velocity regime an approximate treatment of the disk evolution is proposed based on interpolation between the two extreme regimes. We also calculate the rate of embryo's mass growth in an inhomogeneous planetesimal disk and demonstrate that it is in agreement with both the simulations and earlier calculations. Finally we discuss the question of the direction of the embryo-planetesimal interaction in the dispersion-dominated regime and demonstrate that it is repulsive. This means that the embryo always forms a gap in the disk around it, which is in contrast with the results of other authors. The machinery developed here will be applied to realistic protoplanetary systems in future papers.Comment: 40 pages, 9 figures, submitted to A

Reduction of the COSMOS Southern Sky galaxy survey data to the RC3 standard system

After having cross-identified a subsample of LEDA galaxies in the COSMOS database, we defined the best relations to convert COSMOS parameters (coordinates, position angle, diameter, axis ratio and apparent magnitude) into RC3 system used in the LEDA database. Tiny secondary effects can be tested: distance to plate cenetrs effect and air-mass effect. The converted COSMOS parameters are used to add missing parameters on LEDA galaxies. Key words: galaxies - catalogue - photometryComment: 5 pages, postcript including figures, to appear in MNRAS, reprint requests: [email protected]

Development of silicon carbide semiconductor devices for high temperature applications

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology

Advances in silicon carbide Chemical Vapor Deposition (CVD) for semiconductor device fabrication

Improved SiC chemical vapor deposition films of both 3C and 6H polytypes were grown on vicinal (0001) 6H-SiC wafers cut from single-crystal boules. These films were produced from silane and propane in hydrogen at one atmosphere at a temperature of 1725 K. Among the more important factors which affected the structure and morphology of the grown films were the tilt angle of the substrate, the polarity of the growth surface, and the pregrowth surface treatment of the substrate. With proper pregrowth surface treatment, 6H films were grown on 6H substrates with tilt angles as small as 0.1 degrees. In addition, 3C could be induced to grow within selected regions on a 6H substrate. The polarity of the substrate was a large factor in the incorporation of dopants during epitaxial growth. A new growth model is discussed which explains the control of SiC polytype in epitaxial growth on vicinal (0001) SiC substrates