7 research outputs found
Additional file 2: of Time-dependent postural control adaptations following a neuromuscular warm-up in female handball players: a randomized controlled trial
Training program. The file includes a detailed description of the neuromuscular warm-up program implemented in this study. (DOCX 17Â kb
Details of postoperative management including a continuous regional anesthetic technique.
<p>Details of postoperative management including a continuous regional anesthetic technique.</p
Patient flow during enrollment and analysis.
<p>Patient flow during enrollment and analysis.</p
Results of the ANOVA investigating the interaction of the factors “age”, “preoperative pain”, “anesthetic technique” and “surgical procedure” with sex differences of the outcome “worst postoperative pain since surgery”.
<p>Results of the ANOVA investigating the interaction of the factors “age”, “preoperative pain”, “anesthetic technique” and “surgical procedure” with sex differences of the outcome “worst postoperative pain since surgery”.</p
Results of sex differences in postoperative pain outcome and subgroup analysis focusing on the influence of age and preoperative pain.
<p>Results of sex differences in postoperative pain outcome and subgroup analysis focusing on the influence of age and preoperative pain.</p
Local Ion Irradiation-Induced Resistive Threshold and Memory Switching in Nb<sub>2</sub>O<sub>5</sub>/NbO<sub><i>x</i></sub> Films
Resistive switching devices with a Nb<sub>2</sub>O<sub>5</sub>/NbO<sub><i>x</i></sub> bilayer stack combine threshold and memory
switching. Here we present a new fabrication method to form such devices.
Amorphous Nb<sub>2</sub>O<sub>5</sub> layers were treated by a krypton
irradiation. Two effects are found to turn the oxide partly into a
metallic NbO<sub><i>x</i></sub> layer: preferential sputtering
and interface mixing. Both effects take place at different locations
in the material stack of the device; preferential sputtering affects
the surface, while interface mixing appears at the bottom electrode.
To separate both effects, devices were irradiated at different energies
(4, 10, and 35 keV). Structural changes caused by ion irradiation
are studied in detail. After successful electroforming, the devices
exhibit the desired threshold switching. In addition, the choice of
the current compliance defines whether a memory effect adds to the
device. Findings from electrical characterization disclose a model
of the layer modification during irradiation