Resonance fluorescence of a site-controlled quantum dot realized by the buried-stressor growth technique

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 110, 111101 (2017) and may be found at https://doi.org/10.1063/1.4978428.Site-controlled growth of semiconductor quantum dots (QDs) represents a major advancement to achieve scalable quantum technology platforms. One immediate benefit is the deterministic integration of quantum emitters into optical microcavities. However, site-controlled growth of QDs is usually achieved at the cost of reduced optical quality. Here, we show that the buried-stressor growth technique enables the realization of high-quality site-controlled QDs with attractive optical and quantum optical properties. This is evidenced by performing excitation power dependent resonance fluorescence experiments at cryogenic temperatures showing QD emission linewidths down to 10 μeV. Resonant excitation leads to the observation of the Mollow triplet under CW excitation and enables coherent state preparation under pulsed excitation. Under resonant π-pulse excitation we observe clean single-photon emission associated with g(2)(0) = 0.12 limited by non-ideal laser suppression.EC/FP7/615613/EU/External Quantum Control of Photonic Semiconductor Nanostructures/EXQUISIT

Two-photon interference from remote deterministic quantum dot microlenses

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 110, 011104 (2017) and may be found at https://doi.org/10.1063/1.4973504.We report on two-photon interference (TPI) experiments using remote deterministic single-photon sources. Employing 3D in-situ electron-beam lithography, we fabricate quantum-light sources at specific target wavelengths by integrating pre-selected semiconductor quantum dots within monolithic microlenses. The individual single-photon sources show TPI visibilities of 49% and 22%, respectively, under pulsed p-shell excitation at 80 MHz. For the mutual TPI of the remote sources, we observe an uncorrected visibility of 29%, in quantitative agreement with the pure dephasing of the individual sources. Due to its efficient photon extraction within a broad spectral range (>20 nm), our microlens-based approach is predestinated for future entanglement swapping experiments utilizing entangled photon pairs emitted by distant biexciton-exciton radiative cascades.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeEC/FP7/615613/EU/External Quantum Control of Photonic Semiconductor Nanostructures/EXQUISIT

Generation of maximally entangled states and coherent control in quantum dot microlenses

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 112, 153107 (2018) and may be found at https://doi.org/10.1063/1.5020242.The integration of entangled photon emitters in nanophotonic structures designed for the broadband enhancement of photon extraction is a major challenge for quantum information technologies. We study the potential of quantum dot (QD) microlenses as efficient emitters of maximally entangled photons. For this purpose, we perform quantum tomography measurements on InGaAs QDs integrated deterministically into microlenses. Even though the studied QDs show non-zero excitonic fine-structure splitting (FSS), polarization entanglement can be prepared with a fidelity close to unity. The quality of the measured entanglement is only dependent on the temporal resolution of the applied single-photon detectors compared to the period of the excitonic phase precession imposed by the FSS. Interestingly, entanglement is kept along the full excitonic wave-packet and is not affected by decoherence. Furthermore, coherent control of the upper biexcitonic state is demonstrated.DFG, SFB 787, Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeBMBF, 03V0630TIB, Entwicklung einer Halbleiterbasierten Einzelphotonenquelle für die Quanteninformationstechnologi

Deterministic integration of quantum dots into on-chip multi-mode interference beamsplitters using in-situ electron beam lithography

The development of multi-node quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of pre-selected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multi-mode interference beamsplitter via in-situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with $g^{(2)}(0) = 0.13\pm 0.02$. Due to its high patterning resolution as well as spectral and spatial control, in-situ electron beam lithography allows for integration of pre-selected quantum emitters into complex photonic systems. Being a scalable single-step approach, it paves the way towards multi-node, fully integrated quantum photonic chips.Comment: 20 pages, 5 figure

Single-photon emission at a rate of 143 MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 107, 041105 (2015) and may be found at https://doi.org/10.1063/1.4927429.We report on the realization of a quantum dot (QD) based single-photon source with a record-high single-photon emission rate. The quantum light source consists of an InGaAs QD which is deterministically integrated within a monolithic microlens with a distributed Bragg reflector as back-side mirror, which is triggered using the frequency-doubled emission of a mode-locked vertical-external-cavity surface-emitting laser (ML-VECSEL). The utilized compact and stable laser system allows us to excite the single-QD microlens at a wavelength of 508 nm with a pulse repetition rate close to 500 MHz at a pulse width of 4.2 ps. Probing the photon statistics of the emission from a single QD state at saturation, we demonstrate single-photon emission of the QD-microlens chip with g(2)(0) < 0.03 at a record-high single-photon flux of (143 ± 16) MHz collected by the first lens of the detection system. Our approach is fully compatible with resonant excitation schemes using wavelength tunable ML-VECSELs, which will optimize the quantum optical properties of the single-photon emission in terms of photon indistinguishability.BMBF, 03V0630, Entwicklung einer Halbleiterbasierten Einzelphotonenquelle für die Quanteninformationstechnologie (QSOURCE)DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeDFG, 192635911, GRK 1782: Funktionalisierung von HalbleiternDFG, 223848855, SFB 1083: Struktur und Dynamik innerer Grenzfläche