Photocarrier lifetime and transport in silicon supersaturated with sulfur

Doping of silicon-on-insulator layers with sulfur to concentrations far above equilibrium by ion implantation and pulsed laser melting can result in large concentration gradients. Photocarriers generated in and near the impurity gradient can separate into different coplanar transport layers, leading to enhanced photocarrier lifetimes in thin silicon-on-insulator films. The depth from which holes escape the heavily doped region places a lower limit on the minority carrier mobility-lifetime product of 10⁻⁸ cm²/V for heavily sulfur dopedsilicon. We conclude that the cross-section for recombination through S impurities at this concentration is significantly reduced relative to isolated impurities.Research at Rensselaer was supported by the Army Research Office under Contract No. W911NF0910470 and by the NSF REU program at Rensselaer. Research at Harvard was supported by US Army ARDEC under Contract No. W15QKN-07-P-0092. D.R. was supported in part by a National Defense Science and Engineering Graduate fellowship

Determination of the complex refractive indices of Titan haze analogs using photothermal deflection spectroscopy

International audienceThe spectrometers of the Cassini mission to the Saturn system have detected haze layers reaching up to 800 km in Titan's atmosphere. Knowledge of the complex refractive index (k) of the haze is important for modeling the surface and atmosphere of Titan and retrieving some information about the functional groups present in the aerosols. Plasma discharges or ultraviolet radiation are commonly used to drive the formation of solid organics assumed to be good analogs of the Titan aerosols. [Tran, B.N., Ferris, J.P., Chera, J.J., 2003a. The photochemical formation of a Titan haze analog. Structural analysis by X-ray photoelectron and infrared spectroscopy. Icarus 162, 114–124; Tran, B.N., Force, M., Briggs, R., Ferris J.P., Persans, P., Chera, J.J., 2008. Photochemical processes on Titan: Irradiation of mixtures of gases that simulate Titan's atmosphere. Icarus 177, 106–115] reported the index of refraction of analogs synthesized by far ultraviolet irradiation of various gas mixtures. k was determined in the 200–800 nm wavelength range from transmission and reflection spectroscopy. However, this technique is limited by (i) uncertainties in the absorption values because of the small amounts of organics available, (ii) light scattering by the surface roughness and particulates in the sample. These limitations prompted us to perform new measurements using photothermal deflection spectroscopy (PDS), a technique based on the conversion of absorbed light into heat in the material of interest. By combining traditional spectroscopy (λ 500 nm), we determined values of k over the 375–1550 nm range. k values as low as 10−4 above 1000 nm were determined. This is one order of magnitude lower than the measurements generally used as a reference for Titan's aerosols analogs [Khare, B.N., Sagan, C., Arakawa, E.T., Suits, F., Callicott, T.A., Williams, M.W., 1984. Optical-constants of organic Tholins produced in a simulated Titanian atmosphere—from soft-X-ray to microwave-frequencies. Icarus 60(1), 127–137]. We recommend that these results were used in models to describe the optical properties of the aerosols produced in Titan's stratosphere

Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes

Highly supersaturated solid solutions of selenium or sulfur in silicon were formed by ion implantation followed by nanosecond pulsed laser melting. n[superscript +]p photodiodes fabricated from these materials exhibit gain (external quantum efficiency >3000%) at 12 V of reverse bias and substantial optoelectronic response to light of wavelengths as long as 1250 nm. The amount of gain and the strength of the extended response both decrease with decreasing magnitude of bias voltage, but >100% external quantum efficiency is observed even at 2 V of reverse bias. The behavior is inconsistent with our expectations for avalanche gain or photoconductive gain.Army Armament Research, Development, and Engineering Center (U.S.) (Contract W15QKN-07-P-0092)United States. Army Research Office (Grant W911NF-09-1-0470

Hyperdoped silicon sub-band gap photoresponse for an intermediate band solar cell in silicon

Hyperdoping silicon with impurities is considered an attractive method to develop an intermediate band solar cell in silicon with the potential to increase the photovoltaic cell efficiency beyond that of the Shockley-Queisser limit by utilizing sub-band gap photons for energy generation. Unfortunately, to date sub-band gap photoresponse has not been observed in singlecrystal hyperdoped silicon at room temperature, which is crucial for the development of intermediate band solar cells. In this contribution, we report and analyze room-temperature sub-band gap photoresponse of single-crystal silicon hyperdoped with gold. We further discuss the potential of using gold-hyperdoped silicon for IBSC in silicon

Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

Room-temperature infrared sub-band gap photoresponse in silicon is of interest for telecommunications, imaging and solid-state energy conversion. Attempts to induce infrared response in silicon largely centred on combining the modification of its electronic structure via controlled defect formation (for example, vacancies and dislocations) with waveguide coupling, or integration with foreign materials. Impurity-mediated sub-band gap photoresponse in silicon is an alternative to these methods but it has only been studied at low temperature. Here we demonstrate impurity-mediated room-temperature sub-band gap photoresponse in single-crystal silicon-based planar photodiodes. A rapid and repeatable laser-based hyperdoping method incorporates supersaturated gold dopant concentrations on the order of 1020 cm -3 into a single-crystal surface layer ∼150 nm thin. We demonstrate room-temperature silicon spectral response extending to wavelengths as long as 2,200 nm, with response increasing monotonically with supersaturated gold dopant concentration. This hyperdoping approach offers a possible path to tunable, broadband infrared imaging using silicon at room temperature

Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

Room-temperature infrared sub-band gap photoresponse in silicon is of interest for telecommunications, imaging and solid-state energy conversion. Attempts to induce infrared response in silicon largely centred on combining the modification of its electronic structure via controlled defect formation (for example, vacancies and dislocations) with waveguide coupling, or integration with foreign materials. Impurity-mediated sub-band gap photoresponse in silicon is an alternative to these methods but it has only been studied at low temperature. Here we demonstrate impurity-mediated room-temperature sub-band gap photoresponse in single-crystal silicon-based planar photodiodes. A rapid and repeatable laser-based hyperdoping method incorporates supersaturated gold dopant concentrations on the order of 1020 cm−3 into a single-crystal surface layer ~150 nm thin. We demonstrate room-temperature silicon spectral response extending to wavelengths as long as 2,200 nm, with response increasing monotonically with supersaturated gold dopant concentration. This hyperdoping approach offers a possible path to tunable, broadband infrared imaging using silicon at room temperature.National Science Foundation (U.S.). Energy, Power, and Adaptive Systems (Contract ECCS-1102050)National Science Foundation (U.S.) (EEC-1041895)Center for Clean Water and Clean Energy at MIT and KFUP