51 research outputs found

    High-brightness Beamline for X-ray Spectroscopy at the Advanced Light Source

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    Beamline 9.3.1 at the Advanced Light Source (ALS) is a windowless beamline, covering the 1-6 keV photon-energy range, designed to achieve the goals of high energy resolution, high flux, and high brightness at the sample. When completed later this year, it will be the first ALS monochromatic hard-x-ray beamline, and its brightness will be an order-of-magnitude higher than presently available in this energy range. In addition, it will provide flux and resolution comparable to any other beamline now in operation. To achieve these goals, two technical improvements, relative to existing x-ray beamlines, were incorporated. First, a somewhat novel optical design for x rays, in which matched toroidal mirrors are positioned before and after the double-crystal monochromator, was adopted. This configuration allows for high resolution by passing a collimated beam through the monochromator, and for high brightness by focusing the ALS source on the sample with unit magnification. Second, a new “Cowan type” double-crystal monochromator based on the design used at NSLS beamline X-24A was developed. The measured mechanical precision of this new monochromator shows significant improvement over existing designs, without using positional feedback available with piezoelectric devices. Such precision is essential because of the high brightness of the radiation and the long distance (12 m) from the source (sample) to the collimating (focusing) mirror. This combination of features will provide a bright, high resolution, and stable x-ray beam for use in the x-ray spectroscopy program at the ALS

    Electronic structures of B-2p and C-2p of boron-doped diamond film by soft X-ray absorption and emission spectroscopy

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    X-ray absorption (XAS) and emission (XES) spectroscopy near B-K and C-K edges have been performed on metallic (~1at%B, B-diamond) and semiconducting (~0.1at%B and N, BN-diamond) doped-diamond films. Both B-K XAS and XES spectra shows metallic partial density of state (PDOS) with the Fermi energy of 185.3 eV, and there is no apparent boron-concentration dependence in contrast to the different electric property. In C-K XAS spectrum of B-diamond, the impurity state ascribed to boron is clearly observed near the Fermi level. The Fermi energy is found to be almost same with the top of the valence band of non-doped diamond, E_V, 283.9 eV. C-K XAS of BN-diamond shows both the B-induced shallow level and N-induced deep-and-broad levels as the in-gap states, in which the shallow level is in good agreement with the activation energy (E_a=0.37 eV) estimated from the temperature dependence of the conductivity, namely the change in C-2p PDOS of impurity-induced metallization is directly observed. The electric property of this diamond is mainly ascribed to the electronic structure of C-2p near the Fermi level. The observed XES spectra are compared with the DVX-alpha cluster calculation. The DVX-alpha result supports the strong hybridization between B-2p and C-2p observed in XAS and XES spectra, and suggests that the small amount of borons (<1at%) in diamond occupy the substitutional site rather than interstitial site.Comment: submitted to Phys. Rev. B, 5 pages and 5 figure

    Holes in the valence band of superconducting boron-doped diamond film studied by soft X-ray absorption and emission spectroscopy

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    Carbon- and boron-2pp states of superconducting and non-superconducting boron-doped diamond samples are measured using soft X-ray emission and absorption spectroscopy. For the superconducting sample, a large density of hole states is observed in the valence band in addition to the states in the impurity band. The hole states in the valence band is located at about 1.3 eV below the valence band maximum regardless of the doping level, which cannot be interpreted within a simple rigid band model. Present experimental results, combined with the first principles calculations, suggest that superconductivity is to be attributed to the holes in the valence band.Comment: 4 pages, 4 figure

    Design and Performance of the Advanced-Light-Source Double-crystal Monochromator

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    A new “Cowan type” double-crystal monochromator, based on the boomerang design used at National Synchrotron Light Source (NSLS) beamline X-24A, has been developed for beamline 9.3.1 at the Advanced Light Source (ALS), a windowless ultrahigh vacuum beamline covering the 1-6 keV photon-energy range. Beamline 9.3.1 is designed to simultaneously achieve the goals of high energy resolution, high flux, and high brightness at the sample. The mechanical design of the monochromator has been simplified, and recent developments in technology have been included. Measured mechanical precision of the monochromator shows significant improvement over existing designs. In tests with x-rays at NSLS beamline X-23Ʌ2, maximum deviations in the intensity of monochromatic light were just 7% during scans of several hundred eV in the vicinity of the Cr K edge (6 keV) with the monochromator operating without intensity feedback. Such precision is essential because of the high brightness of the ALS radiation and the overall length of beamline 9.3.1 (26 m)

    Molecular-orbital Studies Via Satellite-free X-ray Fluorescence: Cl-K Absorption and K–Valence-level Emission Spectra of Chlorofluoromethanes

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    X-ray absorption and emission measurements in the vicinity of the chlorine K edge of the three chlorofluoromethanes have been made using monochromatic synchrotron radiation as the source of excitation. By selectively tuning the incident radiation to just above the Cl 1s single-electron ionization threshold for each molecule, less complex x-ray-emission spectra are obtained. This reduction in complexity is attributed to the elimination of multielectron transitions in the Cl K shell, which commonly produce satellite features in x-ray emission. The resulting satellite-free x-ray-emission spectra exhibit peaks due only to electrons in valence molecular orbitals filling a single Cl 1s vacancy. These simplified emission spectra and the associated x-ray absorption spectra are modeled using straightforward procedures and compared with semiempirical ground-state molecular-orbital calculations. Good agreement is observed between the present experimental and theoretical results for valence-orbital energies and those obtained from ultraviolet photoemission, and between relative radiative yields determined both experimentally and theoretically in this work

    Polarized X-ray-emission Studies of Methyl Chloride and the Chlorofluoromethanes

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    A new technique sensitive to molecular orientation and geometry, and based on measuring the polarization of x-ray emission, has been applied to the Cl-containing molecules methyl chloride (CH3Cl) and the chlorofluoromethanes (CF3Cl, CF2Cl2, and CFCl3) in the gas phase. Upon selective excitation using monochromatic synchrotron radiation in the Cl K-edge (Cl 1s) near-threshold region, polarization-selective x-ray emission studies reveal highly polarized molecular valence x-ray fluorescence for all four molecules. The degree and the orientation of the polarized emission are observed to be sensitive to the incident excitation energy near the Cl Kedge. In some cases, the polarization direction for x-ray emission reverses for small changes in incident excitation energy (a few eV). It is shown that the polarized x-ray emission technique can be used to infer, directly from experiment, symmetries of occupied and unoccupied valence molecular orbitals, an- isotropies in absorption and emission, and orientational and geometrical information. It is suggested that the x-ray polarized-fluorescence phenomenon, reported here for simple molecules, can be used as a new approach to study more complicated systems in a variety of environments

    In-situ X-ray-absorption Spectroscopy Study of Hydrogen Absorption by Nickel-Magnesium Thin Films

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    Structural and electronic properties of co-sputtered Ni-Mg thin films with varying Ni to Mg ratio were studied by in-situ x-ray absorption spectroscopy in the Ni L-edge and Mg K-edge regions. Co-deposition of the metals led to increased disorder and decreased coordination around Ni and Mg compared to pure metal films. Exposure of the metallic films to hydrogen resulted in formation of hydrides and increased disorder. The presence of hydrogen as a near neighbor around Mg caused a drastic reduction in the intensities of multiple scattering resonances at higher energies. The optical switching behavior and changes in the x-ray spectra varied with Ni to Mg atomic ratio. Pure Mg films with Pd overlayers were converted to MgH2: the H atoms occupy regular sites as in bulk MgH2. Although optical switching was slow in the absence of Ni, the amount of H2 absorption was large. Incorporation of Ni in Mg films led to an increase in the speed of optical switching but decreased maximum transparency. Significant shifts in the Ni L3 and L2 peaks are consistent with strong interaction with hydrogen in the mixed films

    First Results from the High-Brightness X-Ray Spectroscopy Beamline 9.3.1 at ALS

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    Beamline 9.3.1 at the Advanced Light Source (ALS) is a windowless beamline, covering the 1–6 keV photon energy range. This beamline is designed to achieve the goal of high brightness at the sample for use in the x‐ray atomic and molecular spectroscopy (XAMS) science, surface and interface science, biology and x‐ray optical development programs at ALS. X‐ray absorption and time‐of‐flight photoemission measurements in 2–5 keV photon energy range along with the flux, resolution, spot size and stability of the beamline will be discussed. Prospects for future XAMS measurements will also be presented

    Soft x-ray spectroscopy experiments on the near K-edge of B in MB2 (M=Mg, Al, Ta, and Nb)

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    Soft X-ray absorption and emission measurements are performed for the K- edge of B in MB2_2 (M=Mg, Al, Ta and Nb). Unique feature of MgB2_2 with a high density of B 2pxy(σ)p_{xy}(\sigma)-state below and above the Fermi edge, which extends to 1 eV above the edge, is confirmed. In contrast, the B 2pp density of states in AlB2_2 and TaB2_2, both of occupied and unoccupied states, decreased linearly towards the Fermi energy and showed a dip at the Fermi energy. Furthermore, there is a broadening of the peaks with pσp\sigma-character in XES and XAS of AlB2_2, which is due to the increase of three dimensionality in the pσp\sigma-band in AlB2_2. The DOS of NbB2_2 has a dip just below the Fermi energy. The present results indicate that the large DOS of B-2pσp\sigma states near the Fermi energy are crucial for the superconductivity of MgB2_2.Comment: 3 pages text and 4 pages figures. accepted for publication to Phys. Rev.

    Near-Edge X-ray Absorption Fine Structure Study of Ion-beam-induced Phase Transformation in Gd2(Ti1-yZry)2O7

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    The structural and electronic properties of Gd2(Ti1−yZry)2O7 (y=0–1) pyrochlores following a 2.0-MeV Au2+ ion-beam irradiation (~5.0 X 1014 Au2+/cm2) have been investigated by Ti 2p and O 1s near-edge x-ray absorption fine structure (NEXAFS). The irradiation of Gd2(Ti1−yZry)2O7 leads to the phase transformation from the ordered pyrochlore structure (Fd3m) to the defect fluorite structure (Fm3m) regardless of Zr concentration. Irradiated Gd2(Ti1−yZry)2O7 with y≤0.5 are amorphous, although significant short-range order is present. Contrasting to this behavior, compositions with y≥0.75 retain crystallinity in the defect fluorite structure following irradiation. The local structures of Zr4+ in the irradiated Gd2(Ti1−yZry)2O7 with y≥0.75 determined by NEXAFS are the same as in the cubic fluorite-structured yttria-stabilized zirconia (Y–ZrO2), thereby providing conclusive evidence for the phase transformation. The TiO6 octahedra present in Gd2(Ti1−yZry)2O7 are completely modified by ion-beam irradiation to TiOx polyhedra, and the Ti coordination is increased to eight with longer Ti–O bond distances. The similarity between cation sites and the degree of disorder in Gd2Zr2O7 facilitate the rearrangement and relaxation of Gd, Zr, and O ions/defects. This inhibits amorphization during the ion-beam-induced phase transition to the radiation-resistant defect fluorite structure, which is in contrast to the ordered Gd2Ti2O7
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