Antiferroelectric negative capacitance from a structural phase transition in zirconia

Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectricity, respectively. However, the recently discovered antiferroelectrics of fluorite structure (HfO$_2$ and ZrO$_2$) are different: A non-polar phase transforms into a polar phase by spontaneous inversion symmetry breaking upon the application of an electric field. Here, we show that this structural transition in antiferroelectric ZrO$_2$ gives rise to a negative capacitance, which is promising for overcoming the fundamental limits of energy efficiency in electronics. Our findings provide insight into the thermodynamically 'forbidden' region of the antiferroelectric transition in ZrO$_2$ and extend the concept of negative capacitance beyond ferroelectricity. This shows that negative capacitance is a more general phenomenon than previously thought and can be expected in a much broader range of materials exhibiting structural phase transitions

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Monolithic 3-D IC (M3-D) is a promising solution to improve the performance and energy-efficiency of modern processors. But, designers are faced with challenges in design tools and methodologies, especially for power and thermal verifications. We developed a new physical design flow that optimally places and routes cache modules in one tier and logic gates in the other. Our tool also builds high-quality clock and power delivery networks targeting logic-on-memory M3-D designs. Finally, we developed a sign-off analysis tool flow to evaluate power, performance, area (PPA), thermal, and voltage-drop quality for given M3-D designs. Using our complete register transfer level (RTL)-to-Graphic Design System (GDS) tool flow, we designed commercial quality 2-D and M3-D implementation of Arm Cortex-A7 and Cortex-A53 processors in a commercial 28-nm technology. Experimental results show that our 3-D processors offer 20% (A7) and 21% (A53) performance gain, compared with their 2-D commercial counterparts. The voltage-drop degradation of our 3-D Cortex-A7 and Cortex-A53 processors is less than 3% of the supply voltage, while temperature increase is 10.71 °C and 13.04 °C, respectively.SCOPUS: ar.jinfo:eu-repo/semantics/publishe

Antiferroelectric negative capacitance from a structural phase transition in zirconia.

Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectricity, respectively. However, the recently discovered antiferroelectrics of fluorite structure (HfO2 and ZrO2) are different: A non-polar phase transforms into a polar phase by spontaneous inversion symmetry breaking upon the application of an electric field. Here, we show that this structural transition in antiferroelectric ZrO2 gives rise to a negative capacitance, which is promising for overcoming the fundamental limits of energy efficiency in electronics. Our findings provide insight into the thermodynamically forbidden region of the antiferroelectric transition in ZrO2 and extend the concept of negative capacitance beyond ferroelectricity. This shows that negative capacitance is a more general phenomenon than previously thought and can be expected in a much broader range of materials exhibiting structural phase transitions