Analysis on shear lag effect of three-span continuous curve steel box-section girder

Analysis on shear lag effect of curved box-section girder use finite element analysis software, by change three-span continuous curve steel’s space geometry parameter into explore basic model, which study different central angel and different curvature radius influence take part act on three span continuous curve steel box-section girder. By analysis on shear lag effect of different central angel, we can draw a conclusion that the shear lag effect on inner side and outer side can appear a simultaneity. When inner side joint point approach plus max, in the same time the outer side joint point approach minus max. When curve box-section girder in earthquake effect, the inner side is much larger than outer side. When other factors are not change, the change of central angel influence a lot on shear lag effect. The central angel is smaller, the bigger shear lag on midspan’s inner side than outer side. When only change curve radius, the smaller curve radius is, the bigger on midspan’s outer side than inner side

Low-field magnetotransport in graphene cavity devices

Confinement and edge structures are known to play significant roles in electronic and transport properties of two-dimensional materials. Here, we report on low-temperature magnetotransport measurements of lithographically patterned graphene cavity nanodevices. It is found that the evolution of the low-field magnetoconductance characteristics with varying carrier density exhibits different behaviors in graphene cavity and bulk graphene devices. In the graphene cavity devices, we have observed that intravalley scattering becomes dominant as the Fermi level gets close to the Dirac point. We associate this enhanced intravalley scattering to the effect of charge inhomogeneities and edge disorder in the confined graphene nanostructures. We have also observed that the dephasing rate of carriers in the cavity devices follows a parabolic temperature dependence, indicating that the direct Coulomb interaction scattering mechanism governs the dephasing at low temperatures. Our results demonstrate the importance of confinement in carrier transport in graphene nanostructure devices.Comment: 13 pages, 5 figure

Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a Bi2_2Se3_3 thin film

Electron transport properties of a topological insulator Bi$_2$Se$_3$ thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are fabricated from the as-grown film directly on the mica substrate. Weak antilocalization and electron-electron interaction effects are observed and analyzed at low temperatures. The phase-coherence length extracted from the measured weak antilocalization characteristics shows a strong power-law increase with decreasing temperature and the transport in the film is shown to occur via coupled multiple (topological surface and bulk states) channels. The conductivity of the film shows a logarithmically decrease with decreasing temperature and thus the electron-electron interaction plays a dominant role in quantum corrections to the conductivity of the film at low temperatures.Comment: 12 pages, 5 figure

Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures

Graphene/hexagonal boron nitride (G/$h$-BN) heterostructures offer an excellent platform for developing nanoelectronic devices and for exploring correlated states in graphene under modulation by a periodic superlattice potential. Here, we report on transport measurements of nearly $0^{\circ}$-twisted G/$h$-BN heterostructures. The heterostructures investigated are prepared by dry transfer and thermally annealing processes and are in the low mobility regime (approximately $3000~\mathrm{cm}^{2}\mathrm{V}^{-1}\mathrm{s}^{-1}$ at 1.9 K). The replica Dirac spectra and Hofstadter butterfly spectra are observed on the hole transport side, but not on the electron transport side, of the heterostructures. We associate the observed electron-hole asymmetry to the presences of a large difference between the opened gaps in the conduction and valence bands and a strong enhancement in the interband contribution to the conductivity on the electron transport side in the low-mobility G/$h$-BN heterostructures. We also show that the gaps opened at the central Dirac point and the hole-branch secondary Dirac point are large, suggesting the presence of strong graphene-substrate interaction and electron-electron interaction in our G/$h$-BN heterostructures. Our results provide additional helpful insight into the transport mechanism in G/$h$-BN heterostructures.Comment: 7 pages, 4 figure

Bi2O2Se nanowires presenting high mobility and strong spin-orbit coupling

Systematic electrical transport characterizations were performed on high-quality Bi2O2Se nanowires to illustrate its great transport properties and further application potentials in spintronics. Bi2O2Se nanowires synthesized by chemical vapor deposition method presented a high field-effect mobility up to 1.34*104 cm2V-1s-1, and exhibited ballistic transport in the low back-gate voltage (Vg) regime where conductance plateaus were observed. When further increasing the electron density by increasing Vg, we entered the phase coherent regime and weak antilocalization (WAL) was observed. The spin relaxation length extracted from the WAL was found to be gate tunable, ranging from ~100 nm to ~250 nm and reaching a stronger spin-obit coupling (SOC) than the two-dimensional counterpart (flakes). We attribute the strong SOC and the gate tunability to the presence of a surface accumulation layer which induces a strong inversion asymmetry on the surface. Such scenario was supported by the observation of two Shubnikov-de Haas oscillation frequencies that correspond to two types of carriers, one on the surface, and the other in the bulk. The high-quality Bi2O2Se nanowires with a high mobility and a strong SOC can act as a very prospective material in future spintronics.Comment: 22 pages, 7 figure

Strong spin-orbit interaction and magnetotransport in semiconductor Bi2_2O2_2Se nanoplates

Semiconductor Bi$_2$O$_2$Se nanolayers of high crystal quality have been realized via epitaxial growth. These two-dimensional (2D) materials possess excellent electron transport properties with potential application in nanoelectronics. It is also strongly expected that the 2D Bi$_2$O$_2$Se nanolayers could be of an excellent material platform for developing spintronic and topological quantum devices, if the presence of strong spin-orbit interaction in the 2D materials can be experimentally demonstrated. Here, we report on experimental determination of the strength of spin-orbit interaction in Bi$_2$O$_2$Se nanoplates through magnetotransport measurements. The nanoplates are epitaxially grown by chemical vapor deposition and the magnetotransport measurements are performed at low temperatures. The measured magnetoconductance exhibits a crossover behavior from weak antilocalization to weak localization at low magnetic fields with increasing temperature or decreasing back gate voltage. We have analyzed this transition behavior of the magnetoconductance based on an interference theory which describes the quantum correction to the magnetoconductance of a 2D system in the presence of spin-orbit interaction. Dephasing length and spin relaxation length are extracted from the magnetoconductance measurements. Comparing to other semiconductor nanostructures, the extracted relatively short spin relaxation length of ~150 nm indicates the existence of strong spin-orbit interaction in Bi$_2$O$_2$Se nanolayers.Comment: 14 pages, 4 figures, and 5 pages of Supplementary Material