Device reflectivity as a simple rule for predicting the suitability of scattering foils for improved OLED light extraction

A general challenge in Organic Light Emitting Diodes (OLEDs) is to extract the light efficiently from waveguided modes within the device structure. This can be accomplished by applying an additional scattering layer to the substrate which results in outcoupling increases between 0% to <100% in external quantum efficiency. In this work, we aim to address this large variation and show that the reflectivity of the OLED is a simple and useful predictor of the efficiency of substrate scattering techniques without the need for detailed modeling. We show that by optimizing the cathode and anode structure of glass based OLEDs by using silver and an ITO free high conductive Agfa Orgacon™ PEDOT:PSS we are able to increase the external quantum efficiency of OLEDs with the same outcoupling substrates from 2.4% to 5.6%, an increase of 130%. In addition, Holst Centre and partners are developing flexible substrates with integrated light extraction features and roll to roll compatible processing techniques to enable this next step in OLED development both for lighting and display applications. These devices show promise as they are shatterproof substrates and facilitate low cost manufacture

High-temperature thin-film barriers for foldable AMOLED displays

\u3cp\u3eWe present a thin-film dual-layer bottom barrier on polyimide that is compatible with 350°C backplane processing for organic light-emitting diode displays and that can facilitate foldable active-matrix organic light-emitting diode devices with a bending radius of &lt;2 mm. We demonstrate organic light-emitting diodes that survive bending over 0.5 mm radius for 10.000× based on the high-temperature bottom barrier. Furthermore, we show compatibility of the bottom barrier with the backplane process by fabricating active-matrix organic light-emitting diode displays on GEN1-sized substrates.\u3c/p\u3

High-temperature thin-film barriers for foldable AMOLED displays

We present a thin-film dual-layer bottom barrier on polyimide that is compatible with 350°C backplane processing for organic light-emitting diode displays and that can facilitate foldable active-matrix organic light-emitting diode devices with a bending radius of <2 mm. We demonstrate organic light-emitting diodes that survive bending over 0.5 mm radius for 10.000× based on the high-temperature bottom barrier. Furthermore, we show compatibility of the bottom barrier with the backplane process by fabricating active-matrix organic light-emitting diode displays on GEN1-sized substrates

Dual-gate self-aligned IGZO TFTs monolithically integrated with high-temperature bottom moisture barrier for flexible AMOLED

\u3cp\u3eWe present a 350°C self-aligned dual-gate a-IGZO backplane technology with a monolithically integrated multi-layer high-temperature thin-film barrier for flexible AMOLED. Thin-film barrier properties and TFT technology are optimized on 320 x 352mm substrates, and demonstrated in a flexible QQVGA 100 ppi AMOLED display prototype.\u3c/p\u3