66 research outputs found

    Nernst Effect as a Probe of Local Kondo Scattering in Heavy Fermions

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    A large, strongly temperature-dependent Nernst coefficient, ν\nu, is observed between TT = 2 K and 300 K for CeCu2_2Si2_2 and Ce0.8_{0.8}La0.2_{0.2}Cu2_2Si2_2. The enhanced ν(T)\nu(T) is determined by the asymmetry of the on-site Kondo (conduction electron−4f-4f electron) scattering rate. Taking into account the measured Hall mobility, μH\mu_H, the highly unusual thermopower, SS, of these systems can be semiquantitatively described by S(T)S(T) == −-ν(T)/μH(T)\nu(T)/\mu_H(T), which explicitly demonstrates that the thermopower originates from the local Kondo scattering process over a wide temperature range from far above to well below the coherence temperature (≈\approx 20 K for CeCu2_2Si2_2). Our results suggest that the Nernst effect can act as a proper probe of local charge-carrier scattering. This promises an impact on exploring the unconventional enhancement of the thermopower in correlated materials suited for potential applications.Comment: 10 pages, 2 Figure

    Resonant Charge Relaxation as a Likely Source of the Enhanced Thermopower in FeSi

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    The enhanced thermopower of the correlated semiconductor FeSi is found to be robust against the sign of the relevant charge carriers. At TT\,≈\approx\,70 K, the position of both the high-temperature shoulder of the thermopower peak and the nonmagnetic-enhanced paramagnetic crossover, the Nernst coefficient ν\nu assumes a large maximum and the Hall mobility μH\mu _H diminishes to below 1 cm2^2/Vs. These cause the dimension-less ratio ν\nu/μH\mu_H −- a measure of the energy dispersion of the charge scattering time τ(ϵ)\tau(\epsilon) −- to exceed that of classical metals and semiconductors by two orders of magnitude. Concomitantly, the resistivity exhibits a hump and the magnetoresistance changes its sign. Our observations hint at a resonant scattering of the charge carriers at the magnetic crossover, imposing strong constraints on the microscopic interpretation of the robust thermopower enhancement in FeSi.Comment: 5 pages, 3 figure

    Enhanced electron correlations in FeSb2_2

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    FeSb2_2 has been recently identified as a new model system for studying many-body renormalizations in a dd-electron based narrow gap semiconducting system, strongly resembling FeSi. The electron-electron correlations in FeSb2_2 manifest themselves in a wide variety of physical properties including electrical and thermal transport, optical conductivity, magnetic susceptibility, specific heat and so on. We review some of the properties that form a set of experimental evidences revealing the crucial role of correlation effects in FeSb2_2. The metallic state derived from slight Te doping in FeSb2_2, which has large quasiparticle mass, will also be introduced.Comment: 9 pages, 7 figures; submitted to Annalen der Physi

    NSOTree: Neural Survival Oblique Tree

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    Survival analysis is a statistical method employed to scrutinize the duration until a specific event of interest transpires, known as time-to-event information characterized by censorship. Recently, deep learning-based methods have dominated this field due to their representational capacity and state-of-the-art performance. However, the black-box nature of the deep neural network hinders its interpretability, which is desired in real-world survival applications but has been largely neglected by previous works. In contrast, conventional tree-based methods are advantageous with respect to interpretability, while consistently grappling with an inability to approximate the global optima due to greedy expansion. In this paper, we leverage the strengths of both neural networks and tree-based methods, capitalizing on their ability to approximate intricate functions while maintaining interpretability. To this end, we propose a Neural Survival Oblique Tree (NSOTree) for survival analysis. Specifically, the NSOTree was derived from the ReLU network and can be easily incorporated into existing survival models in a plug-and-play fashion. Evaluations on both simulated and real survival datasets demonstrated the effectiveness of the proposed method in terms of performance and interpretability.Comment: 12 page

    Simultaneously optimizing the interdependent thermoelectric parameters in Ce(Ni1−x_{1-x}Cux_x)2_2Al3_3

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    Substitution of Cu for Ni in the Kondo lattice system CeNi2_2Al3_3 results in a simultaneous optimization of the three interdependent thermoelectric parameters: thermoelectric power, electrical and thermal conductivities, where the electronic change in conduction band induced by the extra electron of Cu is shown to be crucial. The obtained thermoelectric figure of merit zTzT amounts to 0.125 at around 100 K, comparable to the best values known for Kondo compounds. The realization of ideal thermoelectric optimization in Ce(Ni1−x_{1-x}Cux_x)2_2Al3_3 indicates that proper electronic tuning of Kondo compounds is a promising approach to efficient thermoelectric materials for cryogenic application.Comment: 4 pages, 4 figures. Accepted for publication in Physical Review

    Highly Dispersive Electron Relaxation and Colossal Thermoelectricity in the Correlated Semiconductor FeSb2_2

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    We show that the colossal thermoelectric power, S(T)S(T), observed in the correlated semiconductor FeSb2_2 below 30\,K is accompanied by a huge Nernst coefficient ν(T)\nu(T) and magnetoresistance MR(T)(T). Markedly, the latter two quantities are enhanced in a strikingly similar manner. While in the same temperature range, S(T)S(T) of the reference compound FeAs2_2, which has a seven-times larger energy gap, amounts to nearly half of that of FeSb2_2, its ν(T)\nu(T) and MR(T)(T) are intrinsically different to FeSb2_2: they are smaller by two orders of magnitude and have no common features. With the charge transport of FeAs2_2 successfully captured by the density functional theory, we emphasize a significantly dispersive electron-relaxation time τ(ϵk)\tau(\epsilon_k) due to electron-electron correlations to be at the heart of the peculiar thermoelectricity and magnetoresistance of FeSb2_2.Comment: 8 pages, 5 figure

    Huge Thermoelectric Power Factor: FeSb2 versus FeAs2 and RuSb2

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    The thermoelectric power factor of the narrow-gap semiconductor FeSb2 is greatly enhanced in comparison to the isostructural homologues FeAs2 and RuSb2. Comparative studies of magnetic and thermodynamic properties provide evidence that the narrow and correlated bands as well as the associated enhanced thermoelectricity are only specific to FeSb2. Our results point to the potential of FeSb2 for practical thermoelectric application at cryogenic temperatures and stimulate the search for new correlated semiconductors along the same lines.Comment: 14 pages, 4 figures, published in Applied Physics Expres

    Unbiased Delayed Feedback Label Correction for Conversion Rate Prediction

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    Conversion rate prediction is critical to many online applications such as digital display advertising. To capture dynamic data distribution, industrial systems often require retraining models on recent data daily or weekly. However, the delay of conversion behavior usually leads to incorrect labeling, which is called delayed feedback problem. Existing work may fail to introduce the correct information about false negative samples due to data sparsity and dynamic data distribution. To directly introduce the correct feedback label information, we propose an Unbiased delayed feedback Label Correction framework (ULC), which uses an auxiliary model to correct labels for observed negative feedback samples. Firstly, we theoretically prove that the label-corrected loss is an unbiased estimate of the oracle loss using true labels. Then, as there are no ready training data for label correction, counterfactual labeling is used to construct artificial training data. Furthermore, since counterfactual labeling utilizes only partial training data, we design an embedding-based alternative training method to enhance performance. Comparative experiments on both public and private datasets and detailed analyses show that our proposed approach effectively alleviates the delayed feedback problem and consistently outperforms the previous state-of-the-art methods.Comment: accepted by KDD 202
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