Experimental Study of Frequency Multiplication in a Distributed Array of SIS Junctions

We report the first experimental off-chip detection of frequency multiplication in a distributed array of superconductor–insulator–superconductor (SIS) junctions. A test device consisting of series array of 68 Nb/Al-AlOx/Nb tunnel junctions was designed to study generation of the second harmonic in the 190–210 GHz band. The SIS array was exited with microwave radiation at 3-mm band using a quasi-optically coupled Gunn oscillator, and the output response of the device was studied using a double-sideband SIS mixer operating in the 163–211 GHz range with 4–8 GHz IF bandwidth. We measured extremely sharp spectral signals, associated with the $times 2$ frequency multiplication by the SIS array. Single and multi-photon processes were observed in the response of SIS tunnel junction-array to the applied microwave radiation, confirming device operation in the quantum mode. The output power of the multiplied signal increases linearly with the power of the pumping signal up to certain level and them saturates. In attempt to verify that the device produces noticeable power, the output of the test device was connected to the LO port of the SIS mixer, and an increase of 10%–20% in the SIS mixer dark current was observed. Further development of the demonstrated principle of frequency multiplication may lead to a practical frequency multiplier device

Mm-wave harmonic generation in an array of SIS junctions

We report the first experimental off-chip detection of frequency multiplication in a distributed array of Superconductor-Insulator-Superconductor (SIS) junctions. A test device consisting of series array of 68 Nb/Al-AlOx/Nb tunnel junctions was designed to study generation of the second harmonic. We measured extremely sharp spectral signals, associated with the × 2 frequency multiplication. Distinct single and multi-photon processes were observed in the test device response operated in quantum mode. The mechanism of device saturation was experimentally studied. The test device when connected to the input of an SIS mixer, and pumped, showed 10-20% increase in the SIS junction dark current

Harmonic and reactive behavior of the quasiparticle tunnel current in SIS junctions

In this paper, we show theoretically and experimentally that the reactive quasiparticle tunnel current of the superconductor tunnel junction could be directly measured at specific bias voltages for the higher harmonics of the quasiparticle tunnel current. We used the theory of quasiparticle tunneling to study the higher harmonics of the quasiparticle tunnel current in superconducting tunnel junction in the presence of rf irradiation. The impact of the reactive current on the harmonic behavior of the quasiparticle tunnel current was carefully studied by implementing a practical model with four parameters to model the dc I-V characteristics of the superconducting tunnel junction. The measured reactive current at the specific bias voltage is in good agreement with our theoretically calculated reactive current through the Kramers-Kronig transform. This study also shows that there is an excellent correspondence between the behavior of the predicted higher harmonics using the previously established theory of quasiparticle tunnel current in superconducting tunnel junctions by J.R. Tucker and M.J. Feldman and the measurements presented in this pape

Towards quantum limited frequency multiplication

This paper presents a tentative modelling of Superconductor-Insulator-Superconductor (SIS) junction used as frequency multiplier. The model is tested against the experimental data presented earlier and demonstrates good agreement between the measured data and simulation. Such a model will improve understanding of the SIS junction used as frequency multiplier and hopefully lead us to demonstration of the performance for such multiplier

Terahertz components packaging using integrated waveguide technology

We present an integrated waveguide based packaging solution compatible with different THz component technologies, both for room temperature and cryogenic operations, employing space-qualified wire-bonding for electrical contacts. The proposed waveguide packaging relies on the combination of all-metal micro-machined THz waveguide and active component chip layouts suitable for the realization of systems from 200 up to 5000 GHz. It provides possibility of making 3-dimensional structures via facilitating of multi-level (layered) designs. The surface roughness of the fabricated THz waveguide structure was demonstrated to be 20 nm, while a 2 μm alignment accuracy of the active component chip was verified. \ua9 2011 IEEE

A Technology Demonstrator for 1.6–2.0 THz Waveguide HEB Receiver with a Novel Mixer Layout

In this paper, we present our studies on a technology demonstrator for a balanced waveguide hot-electron bolometer (HEB) mixer operating in the 1.6–2.0 THz band. The design employs a novel layout for the HEB mixer combining several key technologies: all-metal THz waveguide micromachining, ultra-thin NbN film deposition and a micromachining of a silicon-on-insulator (SOI) substrate to manufacture the HEB mixer. In this paper, we present a novel mixer layout that greatly facilitates handling and mounting of the mixer chip via self-aligning as well as provides easy electrical interfacing. In our opinion, this opens up a real prospective for building multi-pixel waveguide THz receivers. Such receivers could be of interest for SOFIA, possible follow up of the Herschel HIFI, and even for ground based telescopes yet over limited periods of time with extremely dry weather (PWV less than 0.1 mm)

Dependence of the scatter of the electrical properties on local non-uniformities of the tunnel barrier in Nb/Al-AlOx/Nb junctions

In this paper, we study the effect of the tunnel barrier thickness non-uniformity in Nb/Al-AlOx/Nb tunnel junctions using the measurement results of the junctioncapacitance (C) and the normal resistance (Rn). The local thickness distribution of the AlOx tunnel barrier in Nb/Al-AlOx/Nb trilayer (RnA ∼ 30 Ω μm2) was studied by high resolution transmission electron microscopy. The specific resistance (RnA) values of the measured junctions range from 8.8 to 68 Ω μm2. We observed scatter in both the junction specific resistance and capacitance data, which is considerably higher than the measurement uncertainty. We also observed noticeable scatter in the RnC product, which does not stem from junction area estimation uncertainties. We discuss the possible reasons that contribute to this scatter. We suggest that the local thickness non-uniformity of the tunnel barrier significantly contributes to the scatter in the RnC product. We confirm this conclusion through an illustrative model based on the barrier imaging data, which results in the variation of the RnC data consistent with the measurements in this paper

Superconducting 4-8-GHz Hybrid Assembly for 2SB Cryogenic THz Receivers

We present here the design and characterization of an intermediate frequency (IF) assembly comprising a compact 90 hybrid chip (coupled line coupler - Lange coupler- coupled line coupler), two bias-T circuits for biasing the superconductor-insulator-superconductor (SIS) mixers, and two transmission-line circuits. Specifically, the miniaturized three-section hybrid chip fabricated using thin-film technology utilizes superconducting Niobium (Nb) transmission lines, air bridges to connect the fingers of the Lange coupler (middle section), and is complemented with two bias-T circuits with integrated MIM capacitors. The assembly was designed to ensure amplitude and phase imbalances better than 0.6 dB and +/- 2 degrees, respectively. Experimental verification of the assembly at 4 K shows good agreement between the measurements and simulations with amplitude imbalance of 0.5 dB and maximum phase imbalance of +/- 2 degrees. The ALMA band-5 (163-211 GHz) receiver will include such assembly. The receiver tests shows sideband rejection ratio better than 15 dB over the entire RF band, i.e., a systematic improvement of 3-9 dB as compared with the previously reported results

Ultra-thin film NbN depositions for HEB heterodyne mixer on Si-substrates

The key of improving hot-electron bolometer (HEB) mixer performance lies inevitably in the quality of ultra-thin NbN films itself. This work presents a thorough investigation of crucial process parameters of NbN films deposited by means of reactive DC-sputtering on Si-substrates at elevated temperatures up to 750°C. The polycrystalline NbN films with thickness of 4 to 10nm were characterized by DC resistivity measurements, ellipsometry and high resolution transmission electron microscopy (HRTEM) in order to confirm thickness and film structure. Since the macroscopic properties such as critical temperature, thickness as well as the transition width to the superconducting state are directly linked to HEB mixer noise temperature and IF bandwidth, a set of experiments were conducted to enhance aforementioned properties. We considered deposition temperature, RF biasing, nitrogen and argon partial and total pressure during deposition as major process variable parameters. Careful optimization of the deposition conditions allowed setting up a process resulting in high-quality NbN ultra-thin films with thickness of 5.5nm exhibiting Tc of 10.5K. Moreover, the transition width could be kept as low as 1.4K. The produced films were stored at ambient conditions and re-characterized over a period of 4 month without measurable degradation

Difference in charge transport properties of Ni-Nb thin films with native and artificial oxide

Here, we report on the properties of native and artificial oxide amorphous thin film on a surface of an amorphous Ni-Nb sample. Careful measurements of local current-voltage characteristics of the system Ni-Nb / NiNb oxide/Pt, were carried out in contact mode of an atomic force microscope. Native oxide showed n-type conductivity, while in the artificial one exhibited p-type one. The shape of current-voltage characteristic curves is unique in both cases and no analogical behavior is found in the literature. X-ray photoelectron spectroscopy (XPS) measurements were used to detect chemical composition of the oxide films and the oxidation state of the alloy components. Detailed analysis of the XPS data revealed that the structure of natural Ni-Nb oxide film consists of Ni-NbOx top layer and nickel enriched bottom layer which provides n-type conductivity. In contrast, in the artificial oxide film Nb is oxidized completely to Nb2O5, Ni atoms migrate into bulk Ni-Nb matrix. Electron depletion layer is formed at the Ni-Nb/Nb2O5 interface providing ptype conductivity