On stochastic switching of bistable resonant-tunneling structures via nucleation

We estimate the critical size of the initial nucleus of the low current state in a bistable resonant tunneling structure which is needed for this nucleus to develop into a lateral switching front. Using the results obtained for deterministic switching fronts, we argue that for realistic structural parameters the critical nucleus has macroscopic dimensions and therefore is too large to be created by stochastic electron noise.Comment: the extended version of the Comment on "Lifetime of metastable states in resonant-tunneling structures" to appear in Phys. Rev.

Impact ionization fronts in Si diodes: Numerical evidence of superfast propagation due to nonlocalized preionization

We present numerical evidence of a novel propagation mode for superfast impact ionization fronts in high-voltage Si $p^+$-$n$-$n^+$ structures. In nonlinear dynamics terms, this mode corresponds to a pulled front propagating into an unstable state in the regime of nonlocalized initial conditions. Before the front starts to travel, field-ehanced emission of electrons from deep-level impurities preionizes initially depleted $n$ base creating spatially nonuniform free carriers profile. Impact ionization takes place in the whole high-field region. We find two ionizing fronts that propagate in opposite directions with velocities up to 10 times higher than the saturated drift velocity.Comment: 3 pages, 4 figure

Lateral current density fronts in asymmetric double-barrier resonant-tunneling structures

We present a theoretical analysis and numerical simulations of lateral current density fronts in bistable resonant-tunneling diodes with Z-shaped current-voltage characteristics. The bistability is due to the charge accumulation in the quantum well of the double-barrier structure. We focus on asymmetric structures in the regime of sequential incoherent tunneling and study the dependence of the bistability range, the front velocity and the front width on the structure parameters. We propose a sectional design of a structure that is suitable for experimental observation of front propagation and discuss potential problems of such measurements in view of our theoretical findings. We point out the possibility to use sectional resonant-tunneling structures as controllable three-terminal switches.Comment: to appear in J.Appl.Phy

Dynamic avalanche breakdown of a p-n junction: deterministic triggering of a plane streamer front

We discuss the dynamic impact ionization breakdown of high voltage p-n junction which occurs when the electric field is increased above the threshold of avalanche impact ionization on a time scale smaller than the inverse thermogeneration rate. The avalanche-to-streamer transition characterized by generation of dense electron-hole plasma capable to screen the applied external electric field occurs in such regimes. We argue that the experimentally observed deterministic triggering of the plane streamer front at the electric field strength above the threshold of avalanche impact ionization but yet below the threshold of band-to-band tunneling is generally caused by field-enhanced ionization of deep-level centers. We suggest that the process-induced sulfur centers and native defects such as EL2, HB2, HB5 centers initiate the front in Si and GaAs structures, respectively. In deep-level free structures the plane streamer front is triggered by Zener band-to-band tunneling.Comment: 4 pages, 2 figure

Tunneling-assisted impact ionization fronts in semiconductors

We propose a novel type of ionization front in layered semiconductor structures. The propagation is due to the interplay of band-to-band tunneling and impact ionization. Our numerical simulations show that the front can be triggered when an extremely sharp voltage ramp ($\sim 10 {\rm kV/ns}$) is applied in reverse direction to a Si $p^+-n-n^+-$structure that is connected in series with an external load. The triggering occurs after a delay of 0.7 to 0.8 ns. The maximal electrical field at the front edge exceeds $10^6 {\rm V/cm}$. The front velocity $v_f$ is 40 times faster than the saturated drift velocity $v_s$. The front passes through the $n-$base with a thickness of $100 {\mu m}$ within approximately 30 ps, filling it with dense electron-hole plasma. This passage is accompanied by a voltage drop from 8 kV to dozens of volts. In this way a voltage pulse with a ramp up to $500 {\rm kV/ns}$ can be applied to the load. The possibility to form a kilovolt pulse with such a voltage rise rate sets new frontiers in pulse power electronics.Comment: 12 pages, 6 figure

Theory of traveling filaments in bistable semiconductor structures

We present a generic nonlinear model for current filamentation in semiconductor structures with S-shaped current-voltage characteristics. The model accounts for Joule self-heating of a current density filament. It is shown that the self-heating leads to a bifurcation from static to traveling filament. Filaments start to travel when increase of the lattice temperature has negative impact on the cathode-anode transport. Since the impact ionization rate decreases with temperature, this occurs for a wide class of semiconductor systems whose bistability is due to the avalanche impact ionization. We develop an analytical theory of traveling filaments which reveals the mechanism of filament motion, find the condition for bifurcation to traveling filament, and determine the filament velocity.Comment: 13 pages, 5 figure

Theory of superfast fronts of impact ionization in semiconductor structures

We present an analytical theory for impact ionization fronts in reversely biased p^{+}-n-n^{+} structures. The front propagates into a depleted n base with a velocity that exceeds the saturated drift velocity. The front passage generates a dense electron-hole plasma and in this way switches the structure from low to high conductivity. For a planar front we determine the concentration of the generated plasma, the maximum electric field, the front width and the voltage over the n base as functions of front velocity and doping of the n base. Theory takes into account that drift velocities and impact ionization coefficients differ between electrons and holes, and it makes quantitative predictions for any semiconductor material possible.Comment: 18 pagers, 10 figure

Selective interactions of boundaries with upstream region of Abd-B promoter in Drosophila bithorax complex and role of dCTCF in this process

Expression of the genes Ubx, abd-A, and Abd-B of the bithorax complex depends on its cis-regulatory region, which is divided into discrete functional domains (iab). Boundary/insulator elements, named Mcp, Fab-6, Fab-7 and Fab-8 (PTS/F8), have been identified at the borders of the iab domains. Recently, binding sites for a Drosophila homolog of the vertebrate insulator protein CTCF have been identified in Mcp, Fab-6 and Fab-8 and also in several regions that correspond to predicted boundaries, Fab-3 and Fab-4 in particular. Taking into account the inability of the yeast GAL4 activator to stimulate the white promoter when the activator and the promoter are separated by a 5-kb yellow gene, we have tested functional interactions between the boundaries. The results show that all dCTCF-containing boundaries interact with each other. However, inactivation of dCTCF binding sites in Mcp, Fab-6 and PTS/F8 only partially reduces their ability to interact, suggesting the presence of additional protein(s) supporting distant interactions between the boundaries. Interestingly, only Fab-6, Fab-7 (which contains no dCTCF binding sites) and PTS/F8 interact with the upstream region of the Abd-B promoter. Thus, the boundaries might be involved in supporting the specific interactions between iab enhancers and promoters of the bithorax complex