Switching isotropic and anisotropic graphene growth in a solid source CVD system

Controlling the isotropic and anisotropic graphene growth in a chemical vapor deposition (CVD) process is a critical aspect to understand the growth dynamics for synthesizing large-area single crystals. Here, we reveal the effect of gas flow and controllability on isotropic and anisotropic graphene growth using a solid carbon source-based atmospheric pressure CVD method. It was found that the growth rate of round-shaped crystals (isotropic growth) was much higher than that of hexagonal crystals (anisotropic growth). The average growth speed increased from 0.276 μm min-1 to 1.89 μm min-1 by switching from hexagonal to circular domain growth in the CVD process. It was also found that there was no significant difference in the quality of graphene crystals when switching the growth from anisotropic to isotropic. Understanding the growth rate of round and hexagonal-shaped crystals can be critical to achieve faster growth of large single crystals. Again, the mixed edge structures (armchair and zigzag) in round-shaped graphene crystals without a fixed orientation unlike hexagonal crystals provide a better chance of seamless merging. Our findings can be significant in understanding the formation of isotropic and anisotropic graphene domains, their growth rate and quality for synthesizing large-area single crystals

Edge controlled growth of hexagonal boron nitride crystals on copper foil by atmospheric pressure chemical vapor deposition

Most of the chemical vapor deposition (CVD) systems used for hexagonal boron nitride (h-BN) growth employ pyrolytic decomposition of a precursor molecule, such as ammonia borane (AB), at a temperature close to its melting point. So the control of its partial pressure is essential for high quality crystal growth. Here, we report on the edge controlled growth of a h-BN single crystal larger than 25 μm in edge length on purchased Cu foils. The key was the controlled supply of borazine gas generated by the decomposition of AB, and the stepwise decomposition of AB was found to be essential for the growth of regular h-BN crystals. The h-BN growth was mostly governed by the position of the nucleation point rather than Cu orientation as confirmed by electron back-scattered diffraction (EBSD) analysis. It was also demonstrated that the variation in temperature during the growth and cooling processes induced wrinkles larger than 20 nm due to the thermal straining of the Cu surface and a negative expansion coefficient of h-BN. These results provide a detailed understanding of h-BN growth, which will be applicable to other 2D materials

Graphitization of Gallium-Incorporated Carbon Nanofibers and Cones: In Situ and Ex Situ Transmission Electron Microscopy Studies

This study demonstrates graphitization directly through the amorphous carbon under the catalysis of a low-melting-point metal, gallium (Ga), by heating in a vacuum heater as well as by Joule heating during in situ transmission electron microscopy (TEM) operation. For the material system of the mixture of Ga nanoparticles (NPs) and amorphous carbon matrix, the graphitization temperature is determined to be about 600 °C for the first time. With increasing the temperature, evaporation and agglomeration of small Ga NPs start to occur together with the graphitization at around the places where Ga NPs would have been located at the surface region. In situ TEM experiment reveals the accelerated increase in electrical conductivity with structural change from amorphous to graphitization. Thus, the combination of the in situ and ex situ TEM observations is believed to be a lead step to understand deeper the graphitization process and provide information in nanoscale

The Mo catalyzed graphitization of amorphous carbon: An: In situ TEM study

For the fabrication of graphene-based nano-scale interconnects, precise control over their position and proper nanoscale soldering are essential. In this work, we report the Joule heat-induced conversion of amorphous carbon to graphene in an in situ TEM setup, using Mo as a catalyst. The catalytic role of Mo during graphene formation has been less explored compared to other metals like Cu or Ni. Compared to metals like Cu, Mo is less subject to electromigration and brittleness, making it suitable for higherature electronics. We found that during the electromigration of Mo, amorphous carbon nanofibers (CNFs) can be converted to highly crystalline few-layered graphene. It was also found that during the graphene formation process, agglomerated Mo particles can be effectively channeled to the end of graphene by voltage-driven electromigration. An agglomerated Mo particle between the probe and graphene acted as a soldering agent, providing the prospect of the further exploration of Mo as a nanoscale soldering material. This work explores the double role of Mo: As a catalyst for graphene synthesis and as a soldering material