EXPLORATION TOWARDS ELECTROSTATIC INTEGRITY FOR SIGE ON INSULATOR (SG-OI) ON JUNCTIONLESS CHANNEL TRANSISTOR (JLCT)

In view of reduced electric field and avoiding source drain engineering, the work exploresstrain effect in junctionless channel transistor. To achieve scaled IOFF and maintain ION, here the device SG-OI JLCT is proposed. The study discusses higher switching action with mole fraction x = 0.25. The dependency of ϕM and the ND is responsible for maintaining constant current for overall analysis