70 research outputs found

    Creation of nonlocal spin-entangled electrons via Andreev tunneling, Coulomb blockade and resonant transport

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    We discuss several scenarios for the creation of nonlocal spin-entangled electrons which provide a source of electronic Einstein-Podolsky-Rosen (EPR) pairs. The central idea is to exploit the spin correlations naturally present in superconductors in form of Cooper pairs. We show that nonlocal spin-entanglement in form of an effective Heisenberg spin interaction is induced between electron spins residing on two quantum dots with no direct coupling between them but each of them being tunnel-coupled to the same superconductor. We then discuss a nonequilibrium setup where mobile and nonlocal spin-entanglement can be created by coherent injection of two electrons in an Andreev tunneling process into two spatially separated quantum dots and subsequently into two Fermi-liquid leads. The current for injecting two spin-entangled electrons into different leads shows a resonance whereas tunneling via the same dot into the same lead is suppressed by the Coulomb blockade effect of the quantum dots. The Aharonov-Bohm oscillations in the current are shown to contain h/e and h/2e periods. Finally we discuss a structure consisting of a superconductor weakly coupled to two separate Luttinger liquid leads. We show that strong correlations again suppress the coherent subsequent tunneling of two electrons into the same lead, thus generating again nonlocal spin-entangled electrons.Comment: 15 pages, 6 figures; proceedings Spintronics conference 2001, Georgetown-University, Washington D

    Electric-Field-control of spin rotation in bilayer graphene

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    The manipulation of the electron spin degree of freedom is at the core of the spintronics paradigm, which offers the perspective of reduced power consumption, enabled by the decoupling of information processing from net charge transfer. Spintronics also offers the possibility of devising hybrid devices able to perform logic, communication, and storage operations. Graphene, with its potentially long spin-coherence length, is a promising material for spin-encoded information transport. However, the small spin-orbit interaction is also a limitation for the design of conventional devices based on the canonical Datta-Das spin-FET. An alternative solution can be found in magnetic doping of graphene, or, as discussed in the present work, in exploiting the proximity effect between graphene and Ferromagnetic Oxides (FOs). Graphene in proximity to FO experiences an exchange proximity interaction (EPI), that acts as an effective Zeeman field for electrons in graphene, inducing a spin precession around the magnetization axis of the FO. Here we show that in an appropriately designed double-gate field-effect transistor, with a bilayer graphene channel and FO used as a gate dielectric, spin-precession of carriers can be turned ON and OFF with the application of a differential voltage to the gates. This feature is directly probed in the spin-resolved conductance of the bilayer

    Electron transport in multiterminal networks of Majorana bound states

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    We investigate electron transport through multiterminal networks hosting Majorana bound states (MBS) in the framework of full counting statistics (FCS). In particular, we apply our general results to T-shaped junctions of two Majorana nanowires. When the wires are in the topologically nontrivial regime, three MBS are localized near the outer ends of the wires, while one MBS is localized near the crossing point, and when the lengths of the wires are finite adjacent MBS can overlap. We propose a combination of current and cross-correlation measurements to reveal the predicted coupling of four Majoranas in a topological T~junction. Interestingly, we show that the elementary transport processes at the central lead are different compared to the outer leads, giving rise to characteristic non-local signatures in electronic transport. We find quantitative agreement between our analytical model and numerical simulations of a tight-binding model. Using the numerical simulations, we discuss the effect of weak disorder on the current and the cross-correlation functions.Comment: 9 pages, 3 figure
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