pi-Extended Pyrene-Fused Double [7]Carbohelicene as a Chiral Polycyclic Aromatic Hydrocarbon

A π-extended double [7]carbohelicene 2 with fused pyrene units was synthesized, revealing considerable intra- and intermolecular π-πinteractions as confirmed with X-ray crystallography. As compared to the previous double [7]carbohelicene 1, the π-extended homologue 2 demonstrated considerably red-shifted absorption with an onset at 645 nm (1: 550 nm) corresponding to a smaller optical gap of 1.90 eV (1: 2.25 eV). A broad near-infrared emission from 600 to 900 nm with a large Stokes shift of ∼100 nm (2.3 × 103 cm-1) was recorded for 2, implying formation of an intramolecular excimer upon excitation, which was corroborated with femtosecond transient absorption spectroscopy. Moreover, 2 revealed remarkable chiral stability with a fairly high isomerization barrier of 46 kcal mol-1, according to density functional theory calculations, which allowed optical resolution by chiral HPLC and suggests potential applications in chiroptical devices

Results from CHIPIX-FE0, a Small-Scale Prototype of a New Generation Pixel Readout ASIC in 65 nm CMOS for HL-LHC

A prototype of a new-generation readout ASIC targeting High-Luminosity (HL) LHC pixel detector upgrades has been designed and fabricated as part of the Italian INFN CHIPIX65 project using a commercial 65 nm CMOS technology. This demonstrator, hereinafter referred to as CHIPIX-FE0, is composed of a matrix of 64 × 64 pixels with 50 μm × 50 μm pixel size embedding two different architectures of analog front-ends working in parallel. The final layout of the chip was submitted and accepted for fabrication on July 2016. Chips were received back from the foundry on October 2016 and successfully characterized before irradiation. Several irra- diation campaigns with X-rays have been accomplished during 2017 at Padova INFN and CERN EP/ESE facilities under different uniformity and temperature conditions up to 630 Mrad Total Ionizing Dose (TID). These studies corfirmed negligible degradation of analog front-ends per- formance after irradiation. First sample chips have been also bump-bonded to 50 μm × 50 μm and single readout electrode 25 μm × 100 μm 3D sensors provided by Trento FBK. This repre- sented a major milestone for the entire CHIPIX65 project, offering to the pixel community the first example of a complete readout chip in 65 nm CMOS technology coupled to such a kind of silicon detectors. Extensive characterizations with laser and radioactive sources have started. This paper briefly summarizes most important pre- and post-irradiation results, along with preliminary results obtained from chips bump-bonded to 3D sensors. Selected components of the CHIPIX65 demonstrator have been finally integrated into the large-scale RD53A prototype submitted at the end of summer 2017 by the CERN RD53 international collaboration on 65 nm CMOS technology