Characterization Of Boron Doped Nanocrystalline Diamonds

Nanostructured diamond doped with boron was prepared using a hot-filament assisted chemical vapour deposition system fed with an ethyl alcohol, hydrogen and argon mixture. The reduction of the diamond grains to the nanoscale was produced by secondary nucleation and defects induced by argon and boron atoms via surface reactions during chemical vapour deposition. Raman measurements show that the samples are nanodiamonds embedded in a matrix of graphite and disordered carbon grains, while morphological investigations using field electron scanning microscopy show that the size of the grains ranges from 20 to 100 nm. The lowest threshold fields achieved were in the 1.6 to 2.4 V/μm range. © 2008 IOP Publishing Ltd.100PART 5Himpsel, F.J., Knapp, J.A., VanVechten, J.A., Eastman, P.E., (1979) Phys. Rev., 20 B, p. 624Bandis, B., Pate, B.B., (1996) Appl. Phys Lett., 69, p. 366Mammana, V.P., Santos, T.E.A., Mammana, A., Baranauskas, V., Ceragioli, H.J., Peterlevitz, A.C., (2002) Appl. Phys. Lett., 81, p. 3470Baranauskas, V., Fontana, M., Ceragioli, H.J., Peterlevitz, A.C., (2004) Nanotech., 15 (10), pp. S678Shroder, R.E., Nemanich, R.J., Glass, J.T., (1990) Phys. Rev., 41 B, p. 3738Ferrari, A.C., Robertson, J., (2001) Phys. Rev., 63 B. , 121405(R)Jiang, X., Frederick, C.K.Au., Lee, S.T., (2002) J. Appl. Phys., 92 (5), p. 2880Lee, Y.C., Lin, S.J., Lin, I.N., Cheng, H.F., (2005) J. Appl. Phys., 97, p. 05431

Synthesis And Characterization Of Boron-doped Carbon Nanotubes

Boron-doped carbon nanotubes have been prepared by chemical vapour deposition of ethyl alcohol doped with B2O3 using a hot-filament system. Multi-wall carbon nanotubes of diameters in the range of 30 - 100 nm have been observed by field emission scanning electron microscopy (FESEM). Raman measurements indicated that the degree of C-C sp2 order decreased with boron doping. Lowest threshold fields achieved were 1.0 V/μm and 2.1 V/μm for undoped and boron-doped samples, respectively. © 2008 IOP Publishing Ltd.100PART 5Bonard, J.M., Kind, H., Stöckli, T., Nilsson, L.O., (2001) Sol. State Electron., 45, p. 893Maultzsch, J., Reich, S., Thomsen, C., Webster, S., Czerw, R., Carroll, D.L., Vieira, S.M.C., Rego, C.A., (2002) Appl.Phys.Lett., 81, p. 2647Mondal, K.C., Coville, N.J., Witcomb, M.J., Tejral, G., Havel, J., (2007) Chem. Phys. Lett., , in pressChen, C.F.C., Tsai, C.L., Lin, C.L., (2003) Diam. Rel. Mater., 12, p. 1500Sharma, R.B., Late Joag, D.S., Govindaraj Rao, C.N.R., (2006) Chem.Phys.Lett, 428, p. 102Mennella, V., Monaco, G., Colanoeli, L., Bussoletti, E., (1995) Carbon, 33 (2), p. 11