6,769 research outputs found
Droplet shapes on structured substrates and conformal invariance
We consider the finite-size scaling of equilibrium droplet shapes for fluid
adsorption (at bulk two-phase co-existence) on heterogeneous substrates and
also in wedge geometries in which only a finite domain of the
substrate is completely wet. For three-dimensional systems with short-ranged
forces we use renormalization group ideas to establish that both the shape of
the droplet height and the height-height correlations can be understood from
the conformal invariance of an appropriate operator. This allows us to predict
the explicit scaling form of the droplet height for a number of different
domain shapes. For systems with long-ranged forces, conformal invariance is not
obeyed but the droplet shape is still shown to exhibit strong scaling
behaviour. We argue that droplet formation in heterogeneous wedge geometries
also shows a number of different scaling regimes depending on the range of the
forces. The conformal invariance of the wedge droplet shape for short-ranged
forces is shown explicitly.Comment: 20 pages, 7 figures. (Submitted to J.Phys.:Cond.Mat.
Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures
The influence of boron segregation and silicon cap-layer thickness on two-dimensional hole gases (2-DHGs) has been investigated in Si/Si0.8Ge0.2/Si inverted-modulation-doped heterostructures grown by solid-source molecular-beam epitaxy. Boron segregation, which is significant in structures with small spacer layers, can be suppressed by growth interruption after the boron doping. How growth interruption affected the electrical properties of the 2-DHG and the boron doping profile as measured by secondary ion mass spectroscopy are reported. We report also on the role played by the unpassivated silicon cap, and compare carrier transport at the normal and inverted interfaces
Coupled Fluctuations near Critical Wetting
Recent work on the complete wetting transition has emphasized the role played
by the coupling of fluctuations of the order parameter at the wall and at the
depinning fluid interface. Extending this approach to the wetting transition
itself we predict a novel crossover effect associated with the decoupling of
fluctuations as the temperature is lowered towards the transition temperature
T_W. Using this we are able to reanalyse recent Monte-Carlo simulation studies
and extract a value \omega(T_W)=0.8 at T_W=0.9T_C in very good agreement with
long standing theoretical predictions.Comment: 4 pages, LaTex, 1 postscript figur
SPIRAL Phase A: A Prototype Integral Field Spectrograph for the AAT
We present details of a prototype fiber feed for use on the Anglo-Australian
Telescope (AAT) that uses a dedicated fiber-fed medium/high resolution (R >
10000) visible-band spectrograph to give integral field spectroscopy (IFS) of
an extended object. A focal reducer couples light from the telescope to the
close-packed lenslet array and fiber feed, allowing the spectrograph be used on
other telescopes with the change of a single lens. By considering the
properties of the fibers in the design of the spectrograph, an efficient design
can be realised, and we present the first scientific results of a prototype
spectrograph using a fiber feed with 37 spatial elements, namely the detection
of Lithium confirming a brown dwarf candidate and IFS of the supernova remnant
SN1987A.Comment: 41 pages, 15 figures, 3 tables; accepted by PAS
Elastic symmetries of defective crystals
I construct discrete and continuous crystal structures that are compatible with a given choice of dislocation density tensor, and (following Mal’cev) provide a canonical form for these discrete structures. The symmetries of the discrete structures extend uniquely to symmetries of corresponding continuous structures—I calculate these symmetries explicitly for a particular choice of dislocation density tensor and deduce corresponding constraints on energy functions which model defective crystals
Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases
We report a study of the influences of MBE conditions on the low-temperature mobilities of Si/Si0.8Ge0.2 2DHG structures. A significant dependence of 2DHG mobility on growth temperature is observed with the maximum mobility of 3640 cm2 V−1 s−1 at 5.4 K being achieved at the relatively high-growth temperature of 640 °C. This dependence is associated with a reduction in interface charge density. Studies on lower mobility samples show that Cu contamination can be reduced both by growth interruptions and by modifications to the Ge source; this reduction produces improvements in the low-temperature mobilities. We suggest that interface charge deriving from residual metal contamination is currently limiting the 4-K mobility
The structure of uniform discrete defective crystals
In the continuum context, a uniform crystal has dislocation density tensor constant in space. A simple iteration procedure generates an infinite set of points which is associated with uniform defective crystals. When certain necessary conditions are satisfied, there is a minimum (non-zero) separation of points in this set, so the set is discrete. We describe the structure of such sets explicitly, and show in particular that any such set is either a simple lattice or a 4-lattice
Uniform generation in trace monoids
We consider the problem of random uniform generation of traces (the elements
of a free partially commutative monoid) in light of the uniform measure on the
boundary at infinity of the associated monoid. We obtain a product
decomposition of the uniform measure at infinity if the trace monoid has
several irreducible components-a case where other notions such as Parry
measures, are not defined. Random generation algorithms are then examined.Comment: Full version of the paper in MFCS 2015 with the same titl
Elemental boron doping behavior in silicon molecular beam epitaxy
Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2×1020 cm−3, to elucidate profile control and electrical activation over the growth temperature range 450–900 °C. Precipitation and surface segregation effects were observed at doping levels of 2×1020 cm−3 for growth temperatures above 600 °C. At growth temperatures below 600 °C, excellent profile control was achieved with complete electrical activation at concentrations of 2×1020 cm−3, corresponding to the optimal MBE growth conditions for a range of Si/SixGe1−x heterostructures
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