Analysis of the Implementation of the Budget and Defence Planning in the Ministry Defence of Ukraine and the Armed Forces of Ukraine in the Context of Weapons and Military Equipment

The article discusses the main approaches to the organization of budgetary and defense planning in the Ministry of Defense of Ukraine and the Armed Forces of Ukraine in the context of the development of weapons and military equipment. The study focuses on the feasibility and necessity of bringing budgetary and defense planning to the best world practices applied by the world's leading countries, including on arms development planning, taking into account the life-cycle costs of weapons and military equipment. The generalized and substantiated views in the scientific and practical environment in Ukraine on the ways and problematic issues of introducing foreign experience of planning arms development into domestic practice. According to the results of the research, recommendations were made for the formation of technical and economic indicators of the life cycle of weapons and military equipment, which take place in the scientific and practical environment of customers and contractors of weapons

Problems Pricing for Defense Products and Solutions

The article considers the role of prices for defense products to meet the needs of defense in material resources for the re-equipment of the armed forces. It is noted that the uncontrolled growth of prices against the background of a significant increase in total costs for the purchase of products of defense industry does not improve the quality and innovation of products, does not meet the requirements of rational use of budgetary financial resources for defense needs, is one of the factors inhibiting modernization. needs of the country's defense capabilities. The shortcomings of the current in Ukraine costing system of pricing for industrial and scientific and technical products for defense purposes are analyzed. The necessity of improvement of the pricing system, strengthening of the state management of pricing for rational (effective) spending of budgetary financial resources is substantiated

The Expediency of Identifying Strategic Alternatives to the Development of the State's Economic Security System Through SWOT Analysis

The outcomes of the conducted research presented in the article will be valuable for managers of all levels involved in strategic planning and management of the modern economy of the state. The article addresses the urgent issue of identifying certain strategic alternatives in the development of the state's economic security system. The analysis of existing threats to the economic security of the state is conducted; the approaches to the definition of economic security are analyzed. The study emphasizes the complex political, social and economic situation in Ukraine due to the difficult situation in eastern Ukraine and the temporary occupation of the Republic of Crimea. It draws attention to the place of Ukraine in the ranking of International organizations and provides information on the main forecast macroeconomic indicators of economic and social development of Ukraine for 2020-2022. It is determined that the economic security of the state is based on self-sufficiency, stability and development of all constituent elements of the economy, and their list is given. The article emphasizes the priority development of the economic security system in the conditions of continuous improvement of the scientific and technical market, constant modernization of production, development of educational institutions, creation of a favorable climate for investment, significant state support of innovative activity. The possibility of using SWOT analysis as a tool for determining strategic alternatives has been investigated and confirmed. The article analyzes information and gives a detailed description of the elements (components) of SWOT analysis. The algorithm of estimation with use of SWOT analysis is graphically presented. The method of carrying out SWOT analysis with corresponding detail of each stage is presented. The study identified and analyzed the advantages and disadvantages of using SWOT analysis in comparison with other methods

ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF HETEROJUNCTIONS MOOX/N-CD1-XZNXTE

The paper presents the results of studies of the optical and electrical properties of МоOx/n-Cd1-хZnхTe semiconductor heterojunctions made by depositing MoOx films on a pre-polished surface of n-Cd1-хZnхTe plates (5 × 5 × 0.7 mm3) in a universal vacuum installation Leybold - Heraeus L560 using reactive magnetron sputtering of a pure Mo target. Such studies are of great importance for the further development of highly efficient devices based on heterojunctions for electronics and optoelectronics. The fabricated МоOx/n‑Cd1‑хZnхTe heterojunctions have a large potential barrier height at room temperature (φ0 = 1.15 eV), which significantly exceeds the analogous parameter for the МоOx/n-CdTe heterojunction (φ0 = 0.85 eV). The temperature coefficient of the change in the height of the potential barrier was experimentally determined to be d(φ0)/dT = -8.7·10-3 eV K, this parameter is four times greater than the temperature coefficient of change in the height of the potential barrier for MoOx/n-CdTe heterostructures. The greater value of the potential barrier height of the МоOx/n-Cd1-хZnхTe heterojunction is due to the formation of an electric dipole at the heterointerface due to an increase in the concentration of surface states in comparison with MoOx/n-CdTe heterostructures, and this is obviously associated with the presence of zinc atoms in the space charge region and at the metallurgical boundary section of the heteroboundary. In МоOx/n‑Cd1-хZnхTe heterojunctions, the dominant mechanisms of current transfer are generation-recombination and tunneling-recombination with the participation of surface states, tunneling with forward bias, and tunneling with reverse bias. It was found that МоOx/n-Cd1-хZnхTe heterojunctions, which have the following photoelectric parameters: open circuit voltage Voc = 0.3 V, short circuit current Isc = 1.2 mA/cm2, and fill factor FF = 0.33 at an illumination intensity of 80 mW/cm2 are promising for the manufacture of detectors of various types of radiation. The measured and investigated impedance of the МоOx/n-Cd1-хZnхTe heterojunction at various reverse biases, which made it possible to determine the distribution of the density of surface states and the characteristic time of their charge-exchange, which decrease with increasing reverse bias

Struggle Against Financing Terrorism in the World and Ukraine by the Way of Strengthening the State Financial Control and Audit System

As the title implies the article describes essential world problem – financing of terrorism. It is specially noted the role state finance control in the preditictions of financing of terrorism. During the 21st century the topic of terrorism has become one of the most dangerous and large-scale global challenges to the world community. Since the events of September 11, 2001 in the United States of America, the phenomenon of terrorism has become more violent, bloody and cynical. The number of states that have experienced the horrific consequences of acts of terrorism is on the rise, and in turn, bears human toll, destruction of infrastructure, intimidation of people and more. The article shows how terrorist organizations are adapting to the current situation and finding new methods and ways of meeting their specific goals with the use of different sources of funding, and what the methods of counteracting them in International practice and in Ukraine. Also, It draws our attention to to analyze the notion of terrorist financing and International experience in opposing it. Much attention is given to analyze the manifestations of terrorist financing in Ukraine

Electrical properties of heterostructures MnS/n-CdZnTe obtained by spray pyrolysis

The conditions for obtaining diode heterostructures of MnS/ n -CdZnTe by the method of spray pyrolysis of MnS alabandite thin films on n -CdZnTe crystalline substrates were investigated. Based on the analysis of the temperature dependences of the I-V-characteristics, the mechanisms of the influence of electronic processes on the forward current in the MnS film are established. The mechanisms of current flow at reverse bias are revealed. The conditions for the formation of the energy barrier at the MnS/ n -CdZnTe heterojunction and the influence on its parameters of the energy states at the semiconductor interface are studied. Based on the C-V-characteristics, the peculiarities of the distribution of electrically active impurities in the base region are investigated and the interaction of the alabandite film capacitance with the diffusion capacitance of the heterostructure is revealed. The proposed model of the energy diagram of the heterostructure well describes the experimental results