Design considerations and test facilities for accelerated radiation effects testing

Test design parameters for accelerated dose rate radiation effects tests for spacecraft parts and subsystems used in long term mission (years) are detailed. A facility for use in long term accelerated and unaccelerated testing is described

Procedures for management control of computer programming in Apollo

Procedures for management control of computer programming in Apollo projec

Very high two-dimensional hole gas mobilities in strained silicon germanium

We report on the growth by solid source MBE and characterization of remote doped Si/SiGe/Si two-dimensional hole gas structures. It has been found that by reducing the Ge composition to <=13% and limiting the thickness of the alloy layer, growth temperatures can be increased up to 950 °C for these structures while maintaining good structural integrity and planar interfaces. Record mobilities of 19 820 cm2 V−1 s−1 at 7 K were obtained in normal structures. Our calculations suggest that alloy scattering is not important in these structures and that interface roughness and interface charge scattering limit the low temperature mobilities

Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases

We report a study of the influences of MBE conditions on the low-temperature mobilities of Si/Si0.8Ge0.2 2DHG structures. A significant dependence of 2DHG mobility on growth temperature is observed with the maximum mobility of 3640 cm2 V−1 s−1 at 5.4 K being achieved at the relatively high-growth temperature of 640 °C. This dependence is associated with a reduction in interface charge density. Studies on lower mobility samples show that Cu contamination can be reduced both by growth interruptions and by modifications to the Ge source; this reduction produces improvements in the low-temperature mobilities. We suggest that interface charge deriving from residual metal contamination is currently limiting the 4-K mobility

Terrace grading of SiGe for high-quality virtual substrates

Silicon germanium (SiGe) virtual substrates of final germanium composition x = 0.50 have been fabricated using solid-source molecular beam epitaxy with a thickness of 2 µm. A layer structure that helps limit the size of dislocation pileups associated with the modified Frank–Read dislocation multiplication mechanism has been studied. It is shown that this structure can produce lower threading dislocation densities than conventional linearly graded virtual substrates. Cross-sectional transmission electron microscopy shows the superior quality of the dislocation network in the graded regions with a lower rms roughness shown by atomic force microscopy. X-ray diffractometry shows these layers to be highly relaxed. This method of Ge grading suggests that high-quality virtual substrates can be grown considerably thinner than with conventional grading methods

Nonaxisymmetric Magnetorotational Instability in Proto-Neutron Stars

We investigate the stability of differentially rotating proto-neutron stars (PNSs) with a toroidal magnetic field. Stability criteria for nonaxisymmetric MHD instabilities are derived using a local linear analysis. PNSs are expected to have much stronger radial shear in the rotation velocity compared to normal stars. We find that nonaxisymmetric magnetorotational instability (NMRI) with a large azimuthal wavenumber $m$ is dominant over the kink mode ($m=1$) in differentially rotating PNSs. The growth rate of the NMRI is of the order of the angular velocity $\Omega$ which is faster than that of the kink-type instability by several orders of magnitude. The stability criteria are analogous to those of the axisymmetric magnetorotational instability with a poloidal field, although the effects of leptonic gradients are considered in our analysis. The NMRI can grow even in convectively stable layers if the wavevectors of unstable modes are parallel to the restoring force by the Brunt-V\"ais\"al\"a oscillation. The nonlinear evolution of NMRI could amplify the magnetic fields and drive MHD turbulence in PNSs, which may lead to enhancement of the neutrino luminosity.Comment: 24pages, 7figures, Accepted for publication in the Astrophysical Journal (December 12, 2005

Study of fluid transients in closed conduits annual report no. 1

Atmospheric density effect on computation of earth satellite orbit

Hall mobility enhancement caused by annealing of Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures

The effect of post-growth furnace thermal annealing (FTA) on the Hall mobility and sheet carrier density measured at 9–300 K in the Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures was studied. FTA treatments in the temperature range of 600–900 °C for 30 min were performed on similar heterostructures but with two Si0.2Ge0.8 channel thicknesses. The annealing at 600 °C is seen to have a negligible effect on the Hall mobility as well as on the sheet carrier density. Increases in the annealing temperature resulted in pronounced successive increases of the mobility. For both samples the maximum Hall mobility was observed after FTA at 750 °C. Further increases of the annealing temperature resulted in a decrease in mobility. The sheet carrier density showed the opposite behavior with an increase in annealing temperature. The mechanism causing this behavior is discussed. Structural characterization of as-grown and annealed samples was done by cross-sectional transmission electron microscopy

Buffalo National River Ecosystems - Part II

The priorities were established for the Buffalo National River Ecosystem Studies through meetings and correspondence with Mr. Roland Wauer and other personnel of the Office of Natural Sciences, Southwest Region of the National Park Service. These priorities were set forth in the appendix of contract no. CX 700050443 dated May 21, 1975

Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures

The influence of boron segregation and silicon cap-layer thickness on two-dimensional hole gases (2-DHGs) has been investigated in Si/Si0.8Ge0.2/Si inverted-modulation-doped heterostructures grown by solid-source molecular-beam epitaxy. Boron segregation, which is significant in structures with small spacer layers, can be suppressed by growth interruption after the boron doping. How growth interruption affected the electrical properties of the 2-DHG and the boron doping profile as measured by secondary ion mass spectroscopy are reported. We report also on the role played by the unpassivated silicon cap, and compare carrier transport at the normal and inverted interfaces