Sound velocity anisotropy in cubic crystals

Simple analytical expressions may be derived for sound velocities in cubic crystals by using lattice harmonics or functions which are invariant under the crystal symmetry operations. These expressions are in good agreement with the exact results for typical crystals such as metallic iron and potassium fluoride

Contactless electroreflectance, in the range of 20 K \u3c T \u3c 300 K, of freestanding wurtzite GaN prepared by hydride-vapor-phase epitaxy

We have performed a detailed contactless electroreflectance study of the interband excitonic transitions on both the Ga and N faces of a 200-μm-thick freestanding hydride-vapor-phase-epitaxy grown wurtzite GaN sample with low defect concentration in the temperature range between 20 and 300 K. The transition energies of the A, B, and C excitons and broadening parameters of the A and B excitons have been determined by least-square fits to the first derivative of a Lorentzian line shape. The energy positions and separations of the excitonic transitions in the sample reveal the existence of residual strain. At 20 K the broadening parameter of A exciton deduced for the Ga (5×105 dislocation cm−2) and N (1×107 dislocation cm−2) faces are 3 and 7 meV, respectively, indicating a lower defect concentration on the former face. The parameters that describe the temperature dependence of the interband transition energies of the A, B, and C excitons as well as the broadening function of the A and B features are evaluated. The results from an analysis of the temperature dependence of the broadening function of excitons A and B indicate that GaN exhibits a very large exciton-phonon coupling