Studies on the readability and on the detection rate in a Mach-Zehnder interferometer-based implementation for high-rate, long-distance QKD protocols

We study the way that chromatic dispersion affects the visibility and the synchronization on Quantum Key Distribution (QKD) protocols in a widely-used setup based on the use of two fiber-based Mach-Zehnder (MZ) interferometers at transmitter/receiver stations. We identify the necessary conditions for the path length difference between the two arms of the interferometers for achieving the desired visibility given the transmission distance -- where the form of the detector's window can be considered. We also associate the above limitations with the maximum detection rate that can be recorded in our setup, including the quantum non-linearity phenomenon, and to the maximum time window of the detector's gate. Exploiting our results we provide two methods, depending on the clock rate of the setup, to perform chromatic dispersion compensation techniques to the signal for keeping the correct order of the transmitted symbols. At the end, we apply our theoretical outcomes in a more realistic QKD deployment, considering the case of phase-encoding BB84 QKD protocol, which is widely used. Our proposed methods, depending on the transmission distance and on the photon emission rate at transmitter station, can be easily generalized to every fiber-optic QKD protocol, for which the discrimination of each symbol is crucial.Comment: 14 pages, 12 figure

All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity

Silicon is the most scalable optoelectronic material, and it has revolutionized our lives in many ways. The prospect of quantum optics in silicon is an exciting avenue because it has the potential to address the scaling and integration challenges, the most pressing questions facing quantum science and technology. We report the first all-silicon quantum light source based on a single atomic emissive center embedded in a silicon-based nanophotonic cavity. We observe a more than 30-fold enhancement of luminescence, a near unity atom-cavity coupling efficiency, and an 8-fold acceleration of the emission from the quantum center. Our work opens avenues for large-scale integrated all-silicon cavity quantum electrodynamics and quantum photon interfaces with applications in quantum communication, sensing, imaging, and computing

Scalable manufacturing of quantum light emitters in silicon under rapid thermal annealing.

Quantum light sources play a fundamental role in quantum technologies ranging from quantum networking to quantum sensing and computation. The development of these technologies requires scalable platforms, and the recent discovery of quantum light sources in silicon represents an exciting and promising prospect for scalability. The usual process for creating color centers in silicon involves carbon implantation into silicon, followed by rapid thermal annealing. However, the dependence of critical optical properties, such as the inhomogeneous broadening, the density, and the signal-to-background ratio, on centers implantation steps is poorly understood. We investigate the role of rapid thermal annealing on the dynamic of the formation of single color centers in silicon. We find that the density and the inhomogeneous broadening greatly depend on the annealing time. We attribute the observations to nanoscale thermal processes occurring around single centers and leading to local strain fluctuations. Our experimental observation is supported by theoretical modeling based on first principles calculations. The results indicate that annealing is currently the main step limiting the scalable manufacturing of color centers in silicon