Surface Chemistry of Ternary Nanocrystals: Engineering the Deposition of Conductive NaBiS2 Films

The ability to engineer the surface chemistry of complex ternary nanocrystals is critical to their successful application in photovoltaic, thermoelectric, and other energy conversion devices. For many years, several studies have shed light into the surface chemistry of unary and binary semiconductor nanocrystals, as well as their surface modification with monodentate and multidentate ligands in a variety of applications. In contrast, our understanding of the surface chemistry and ligand modification of ternary and other complex multinary nanocrystals remains relatively limited. Recently, our group reported the synthesis of colloidal NaBiS2 semiconductor nanocrystals with sizes tunable between 2–60 nm, and a light absorption edge of ca. 1.4 eV. Here, we use a combination of infrared and nuclear magnetic resonance spectroscopies to show that the as-made NaBiS2 nanocrystals are capped by oleylamine and neodecanoate ligands. We investigate biphasic liquid-liquid exchange as a means to replace these native ligands with either carboxylate-terminated lipoic acid or with small iodide ligands, leading in both cases to solubility in polar solvents—such as methanol, water, and dimethylformamide. We also investigate a layer-by-layer, biphasic solid-liquid exchange approach to prepare films of NaBiS2 nanocrystals capped with halide ligands—iodide, bromide, chloride. Upon exchange and removal of the native ligands, we show that the resistance of NaBiS2 nanocrystal films greatly decreases, with their measured conductivity being comparable to that of films made of isostructural PbS nanocrystals, which have been used in solar cells. Lastly, we report the first solar cell device made of NaBiS2 nanocrystal films with a limited power conversion efficiency (PCE) of 0.07. Further nanostructuring and ligand optimization may enable the preparation of much more efficient energy conversion devices based on NaBiS2 as well as other non-toxic and Earth-abundant, biocompatible multinary semiconductors

Clean thermal decomposition of tertiary-alkyl metal thiolates to metal sulfides: Environmentally-benign, non-polar inks for solution-processed chalcopyrite solar cells

We report the preparation of Cu2S, In2S3, CuInS2 and Cu(In,Ga)S2 semiconducting films via the spin coating and annealing of soluble tertiary-alkyl thiolate complexes. The thiolate compounds are readily prepared via the reaction of metal bases and tertiary-alkyl thiols. The thiolate complexes are soluble in common organic solvents and can be solution processed by spin coating to yield thin films. Upon thermal annealing in the range of 200-400 ??C, the tertiary-alkyl thiolates decompose cleanly to yield volatile dialkyl sulfides and metal sulfide films which are free of organic residue. Analysis of the reaction byproducts strongly suggests that the decomposition proceeds via an SN1 mechanism. The composition of the films can be controlled by adjusting the amount of each metal thiolate used in the precursor solution yielding bandgaps in the range of 1.2 to 3.3 eV. The films form functioning p-n junctions when deposited in contact with CdS films prepared by the same method. Functioning solar cells are observed when such p-n junctions are prepared on transparent conducting substrates and finished by depositing electrodes with appropriate work functions. This method enables the fabrication of metal chalcogenide films on a large scale via a simple and chemically clear process.ope

Molecular Chemistry to the Fore: New Insights into the Fascinating World of Photoactive Colloidal Semiconductor Nanocrystals

Colloidal semiconductor nanocrystals possess unique properties that are unmatched by other chromophores such as organic dyes or transition-metal complexes. These versatile building blocks have generated much scientific interest and found applications in bioimaging, tracking, lighting, lasing, photovoltaics, photocatalysis, thermoelectrics, and spintronics. Despite these advances, important challenges remain, notably how to produce semiconductor nanostructures with predetermined architecture, how to produce metastable semiconductor nanostructures that are hard to isolate by conventional syntheses, and how to control the degree of surface loading or valence per nanocrystal. Molecular chemists are very familiar with these issues and can use their expertise to help solve these challenges. In this Perspective, we present our group\u27s recent work on bottom-up molecular control of nanoscale composition and morphology, low-temperature photochemical routes to semiconductor heterostructures and metastable phases, solar-to-chemical energy conversion with semiconductor-based photocatalysts, and controlled surface modification of colloidal semiconductors that bypasses ligand exchange

Unravelling a simple method for the low temperature synthesis of silicon nanocrystals and monolithic nanocrystalline thin films

In this work, we present new results on the plasma processing and structure of hydrogenated polymorphous silicon (pm-Si:H) thin films. pm-Si:H thin films consist of a low volume fraction of silicon nanocrystals embedded in a silicon matrix with medium range order, and they possess this morphology as a significant contribution to their growth comes from the impact on the substrate of silicon clusters and nanocrystals synthesized in the plasma. Quadrupole mass spectrometry, ion flux measurements, and material characterization by transmission electron microscopy (TEM) and atomic force microscopy all provide insight on the contribution to the growth by silicon nanocrystals during PECVD deposition. In particular, cross-section TEM measurements show for the first time that the silicon nanocrystals are uniformly distributed across the thickness of the pm-Si:H film. Moreover, parametric studies indicate that the best pm-Si:H material is obtained at the conditions after the transition between a pristine plasma and one containing nanocrystals, namely a total gas pressure around 2 Torr and a silane to hydrogen ratio between 0.05 to 0.1. From a practical point of view these conditions also correspond to the highest deposition rate achievable for a given RF power and silane flow rate.ope

Graphene-supported high-resolution TEM and STEM imaging of silicon nanocrystals and their capping ligands

Using graphene as an ultrathin support, highresolution transmission and scanning transmission electron microscopy (TEM and STEM) images of organic ligandstabilized silicon (Si) nanocrystals with unprecedented clarity were obtained. TEM images of Si nanocrystals are usually obscured on conventional amorphous carbon TEM supports because of low atomic number (Z) contrast. The atomically thin graphene supports enabled clear images of the crystalline Si cores and, for the first time, organic capping ligands. Various twin defects were observed, often accompanied by very significant lattice distortion and anisotropic strain

Graphene-Supported High-Resolution TEM and STEM Imaging of Silicon Nanocrystals and their Capping Ligands

Using graphene as an ultrathin support, high-resolution transmission and scanning transmission electron microscopy (TEM and STEM) images of organic ligand-stabilized silicon (Si) nanocrystals with unprecedented clarity were obtained. TEM images of Si nanocrystals are usually obscured on conventional amorphous carbon TEM supports because of low atomic number (<i>Z</i>) contrast. The atomically thin graphene supports enabled clear images of the crystalline Si cores and, for the first time, organic capping ligands. Various twin defects were observed, often accompanied by very significant lattice distortion and anisotropic strain