Introducing a nonvolatile N-type dopant drastically improves electron transport in polymer and small-molecule organic transistors

KGaA, Weinheim Molecular doping is a powerful yet challenging technique for enhancing charge transport in organic semiconductors (OSCs). While there is a wealth of research on p-type dopants, work on their n-type counterparts is comparatively limited. Here, reported is the previously unexplored n-dopant (12a,18a)-5,6,12,12a,13,18,18a,19-octahydro-5,6-dimethyl- 13,18[1′,2′]-benzenobisbenzimidazo [1,2-b:2′,1′-d]benzo[i][2.5]benzodiazo-cine potassium triflate adduct (DMBI-BDZC) and its application in organic thin-film transistors (OTFTs). Two different high electron mobility OSCs, namely, the polymer poly[[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8- bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2′-bithiophene)] and a small-molecule naphthalene diimides fused with 2-(1,3-dithiol-2-ylidene)malononitrile groups (NDI-DTYM2) are used to study the effectiveness of DMBI-BDZC as a n-dopant. N-doping of both semiconductors results in OTFTs with improved electron mobility (up to 1.1 cm2 V−1 s−1), reduced threshold voltage and lower contact resistance. The impact of DMBI-BDZC incorporation is particularly evident in the temperature dependence of the electron transport, where a significant reduction in the activation energy due to trap deactivation is observed. Electron paramagnetic resonance measurements support the n-doping activity of DMBI-BDZC in both semiconductors. This finding is corroborated by density functional theory calculations, which highlights ground-state electron transfer as the main doping mechanism. The work highlights DMBI-BDZC as a promising n-type molecular dopant for OSCs and its application in OTFTs, solar cells, photodetectors, and thermoelectrics

Polymer Light‐Emitting Transistors With Charge‐Carrier Mobilities Exceeding 1 cm2 V−1 s−1

The vast majority of conjugated polymer-based light emitting field-effect transistors (LEFETs) are characterized by low charge carrier mobilities typically in the range 10-5 to 10-3 cm2 V-1 s-1 range. Fast carrier transport is a highly desirable characteristic for high frequency LEFET operation and, potentially, for use in electrically-pumped lasers. Unfortunately, high mobility organic semiconductors are often characterised by strong intermolecular π-π interactions that reduce luminescence. Development of new materials and/or device concepts that overcome this hurdle are therefore required. We report single organic semiconductor layer, light-emitting transistors that combine the highest hole mobilities reported to date for any polymer-based LEFET, with encouraging light emission characteristics. We achieve this in a single polymer layer LEFET, which was further enhanced through the use of a small-molecule/conjugated polymer blend system that possesses a film microstructure which supports enhanced charge carrier mobility (3.2 cm2 V-1 s-1) and promising light emission characteristics (1600 cd m-2) as compared to polymer-only based LEFETs. This simple approach represents an attractive strategy to further advance the performance of solution-processed LEFETs

Addition of the lewis acid Zn(C6 F5 )2 enables organic transistors with a maximum hole mobility in excess of 20 cm2 V-1 s-1

Incorporating the molecular organic Lewis acid tris(pentafluorophenyl)borane [B(C6 F5 )3 ] into organic semiconductors has shown remarkable promise in recent years for controlling the operating characteristics and performance of various opto/electronic devices, including, light-emitting diodes, solar cells, and organic thin-film transistors (OTFTs). Despite the demonstrated potential, however, to date most of the work has been limited to B(C6 F5 )3 with the latter serving as the prototypical air-stable molecular Lewis acid system. Herein, the use of bis(pentafluorophenyl)zinc [Zn(C6 F5 )2 ] is reported as an alternative Lewis acid additive in high-hole-mobility OTFTs based on small-molecule:polymer blends comprising 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene and indacenodithiophene-benzothiadiazole. Systematic analysis of the materials and device characteristics supports the hypothesis that Zn(C6 F5 )2 acts simultaneously as a p-dopant and a microstructure modifier. It is proposed that it is the combination of these synergistic effects that leads to OTFTs with a maximum hole mobility value of 21.5 cm2 V-1 s-1 . The work not only highlights Zn(C6 F5 )2 as a promising new additive for next-generation optoelectronic devices, but also opens up new avenues in the search for high-mobility organic semiconductors

Flexible IGZO TFTs and their suitability for space applications

In this paper, low earth orbit radiation (LEO), temperature, and magnetic field conditions are mimicked to investigate the suitability of flexible InGaZnO transistors for lightweight space wearables. More specifically, the impacts of high energetic electron irradiation with fluences up to 10 12 e - /cm 2 , low operating temperatures down to 78 K and magnetic fields up to 11 mT are investigated. This simulates 278 h in LEO. The threshold voltage and mobility of transistors that were exposed to e - irradiation are found to shift by +(0.09 ± 0.05) V and -(0.6 ± 0.5) cm 2 V -1 s -1 . Subsequent low temperature exposure resulted in additional shifts of +0.38 V and -5.95 cm 2 V -1 s -1 for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. Conversely, the performance of the devices was observed not to be significantly affected by the magnetic fields. Finally, a Cascode amplifier presenting a voltage gain of 10.3 dB and a cutoff frequency of 1.2 kHz is demonstrated after the sample had been irradiated, cooled down, and exposed to the magnetic fields. If these notions are considered during the systems design, these devices can be used to unobtrusively integrate sensor systems into space suits

LARGE-SCALE INDICATIVE MAPPING OF SOIL RUNOFF

In our study we estimate relationships between quantitative parameters of relief, soil runoff regime, and spatial distribution of radioactive pollutants in the soil. The study is conducted on the test arable area located in basin of the upper Oka River (Orel region, Russia). Previously we collected rich amount of soil samples, which make it possible to investigate redistribution of the Chernobyl-origin cesium-137 in soil material and as a consequence the soil runoff magnitude at sampling points. Currently we are describing and discussing the technique applied to large-scale mapping of the soil runoff. The technique is based upon the cesium-137 radioactivity measurement in the different relief structures. Key stages are the allocation of the places for soil sampling points (we used very high resolution space imagery as a supporting data); soil samples collection and analysis; calibration of the mathematical model (using the estimated background value of the cesium-137 radioactivity); and automated compilation of the map (predictive map) of the studied territory (digital elevation model is used for this purpose, and cesium-137 radioactivity can be predicted using quantitative parameters of the relief). The maps can be used as a support data for precision agriculture and for recultivation or melioration purposes

A versatile star-shaped organic semiconductor based on benzodithiophene and diketopyrrolopyrrole

We report the synthesis of a new star-shaped π-conjugated oligomer, BDT(DPP)4, containing a benzodithiophene core and four diketopyrrolopyrrole arms. The thermal, electrochemical and optical properties are characterized and the results complemented by computational studies. The utility of the molecule is demonstrated in both solar cell and field-effect transistor devices. In the former, BDT(DPP)4 displays low efficiency when used as an acceptor in blends with poly(3-hexylthiophene) but exhibits promising performance as a donor, in blends with either a fullerene or a non-fullerene acceptor. In field-effect transistors BDT(DPP)4 exhibits typical p-type transistor behavior, which is in accordance with its better donor performance in solar cell devices

Remarkable Enhancement of the Hole Mobility in Several Organic Small-Molecules, Polymers, and Small-Molecule:Polymer Blend Transistors by Simple Admixing of the Lewis Acid p-Dopant B(C6F5)(3)

Improving the charge carrier mobility of solution-processable organic semiconductors is critical for the development of advanced organic thin-film transistors and their application in the emerging sector of printed electronics. Here, a simple method is reported for enhancing the hole mobility in a wide range of organic semiconductors, including small-molecules, polymers, and small-molecule:polymer blends, with the latter systems exhibiting the highest mobility. The method is simple and relies on admixing of the molecular Lewis acid B(C6F5)3 in the semiconductor formulation prior to solution deposition. Two prototypical semiconductors where B(C6F5)3 is shown to have a remarkable impact are the blends of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene:poly(triarylamine) (diF-TESADT:PTAA) and 2,7-dioctyl[1]-benzothieno[3,2-b][1]benzothiophene:poly(indacenodithiophene-co-benzothiadiazole) (C8-BTBT:C16-IDTBT), for which hole mobilities of 8 and 11 cm2 V−1 s−1, respectively, are obtained. Doping of the 6,13-bis(triisopropylsilylethynyl)pentacene:PTAA blend with B(C6F5)3 is also shown to increase the maximum hole mobility to 3.7 cm2 V−1 s−1. Analysis of the single and multicomponent materials reveals that B(C6F5)3 plays a dual role, first acting as an efficient p-dopant, and secondly as a microstructure modifier. Semiconductors that undergo simultaneous p-doping and dopant-induced long-range crystallization are found to consistently outperform transistors based on the pristine materials. Our work underscores Lewis acid doping as a generic strategy towards high performance printed organic microelectronics

One-step six-fold cyanation of benzothiadiazole acceptor Units for air-stable high-performance n-type organic field-effect transistors

We report a new high electron affinity acceptor end group for organic semiconductors, 2,1,3-benzothiadiazole-4,5,6-tricarbonitrile (TCNBT). An n-type organic semiconductor with an indacenodithiophene (IDT) core and TCNBT end groups was synthesized by a six-fold nucleophilic substitution with cyanides on a fluorinated precursor, itself prepared by a direct arylation approach. This one-step chemical modification was found to significantly impact the molecular properties: the fluorinated precursor, TFBT IDT, a poor ambipolar semiconductor, was converted into TCNBT IDT, a good n-type semiconductor. The highly electron-deficient end group TCNBT dramatically decreased the energy of the highest occupied and lowest unoccupied molecular orbitals (HOMO/LUMO) compared to the fluorinated analogue and improved the molecular orientation when utilized in n-type organic field-effect transistors (OFETs). Solution-processed OFETs based on TCNBT IDT exhibited a charge carrier mobility of up to µ e ≈ 0.15 cm 2 V -1 s -1 with excellent ambient stability for 100 hours, highlighting the benefits of the cyanated end group and the synthetic approach

Biorenewable Solvents for High-Performance Organic Solar Cells

With the advent of nonfullerene acceptors (NFAs), organic photovoltaic (OPV) devices are now achieving high enough power conversion efficiencies (PCEs) for commercialization. However, these high performances rely on active layers processed from petroleum-based and toxic solvents, which are undesirable for mass manufacturing. Here, we demonstrate the use of biorenewable 2-methyltetrahydrofuran (2MeTHF) and cyclopentyl methyl ether (CPME) solvents to process donor: NFA-based OPVs with no additional additives in the active layer. Furthermore, to reduce the overall carbon footprint of the manufacturing cycle of the OPVs, we use polymeric donors that require a few synthetic steps for their synthesis, namely, PTQ10 and FO6-T, which are blended with the Y-series NFA Y12. High performance was achieved using 2MeTHF as the processing solvent, reaching PCEs of 14.5% and 11.4% for PTQ10:Y12 and FO6-T:Y12 blends, respectively. This work demonstrates the potential of using biorenewable solvents without additives for the processing of OPV active layers, opening the door to large-scale and green manufacturing of organic solar cells