Depth profiling of high energy nitrogen ions implanted in the 〈1 0 0〉, 〈1 1 0〉 and randomly oriented silicon crystals

This work reports on the experimentally obtained depth profiles of 4 MeV N-14(2+) ions implanted in the (100), (110) and randomly oriented silicon crystals. The ion fluence was 10(17) particles/cm(2), The nitrogen depth profiling has been performed using the Nuclear Reaction Analysis (NRA) method, via the study of N-14(d,alpha(0))C-12 and N-14(d,alpha(1))C-12 nuclear reactions, and with the implementation of SRIM 2010 and SIMNRA computer simulation codes. For the randomly oriented silicon crystal, change of the density of silicon matrix and the nitrogen bubble formation have been proposed as the explanation for the difference between the experimental and simulated nitrogen depth profiles. During the implantation, the RBS/C spectra were measured on the nitrogen implanted and on the virgin crystal spots. These spectra provide information on the amorphization of the silicon crystals induced by the ion implantation. (C) 2011 Elsevier B.V. All rights reserved

Determination and theoretical analysis of the differential cross sections of the ²H(d,p) reaction at energies and detection angles suitable for NRA (Nuclear Reaction Analysis)

The accurate determination of deuteron depth profile presents a strong analytical challenge for all the principal IBA (Ion Beam Analysis) techniques. As far as NRA (Nuclear Reaction Analysis) is concerned, the 2H(d,p) reaction, seems to be a promising candidate, especially in the case of complex matrices, or for the study of deep-implanted deuteron layers. In the present work differential cross-section values for the 2H(d,p) reaction have been determined at 140°, 160° and 170°, for Ed,lab=900-1600 keV, with an energy step of 50 keV, using a well-characterized, thin C:D target deposited on a polished Si wafer. The experimental results were analyzed using the R-matrix calculations code AZURE