(E)-1-[(Diphenyl­amino)meth­yl]-4-(4-fluoro­benzyl­ideneamino)-3-[1-(4-iso­butyl­phen­yl)eth­yl]-1H-1,2,4-triazole-5(4H)-thione

The title 1,2,4-triazole compound, C34H34FN5S, exists in a trans configuration with respect to the acyclic C=N bond. An intra­molecular C—H⋯S contact generates a six-membered ring, producing an S(6) ring motif. The essentially planar 1,2,4-triazole ring [maximum deviation 0.008 (1) Å] is inclined at 21.43 (5) and 83.03 (6)°, respectively, with respect to the flurophenyl unit and the isobutyl-substituted benzene ring. The diphenyl­amino unit is not planar, as indicated by the dihedral angle between two phenyl rings of 76.95 (6)°. The crystal structure is stabilized by C—H⋯π and π–π [centroid–centroid distance = 3.6169 (6) Å] inter­actions; mol­ecules are stacked along the b axis

Anomalous spectral evolution with bulk sensitivity in BiPd

We investigate the electronic structure of a noncentrosymmetric superconductor, BiPd using photoemission spectroscopy with multiple photon energies ranging from ultraviolet to hard x-ray. Experimental data exhibit interesting difference in the surface and bulk electronic structures of this system. While the surface Bi core level peaks appear at lower binding energies, the surface valence band features are found at the higher binding energy side of the bulk valence band; valence band is primarily constituted by the Pd 4d states. These changes in the electronic structure cannot be explained by the change in ionicity of the constituent elements via charge transfer. Analysis of the experimental data indicates that the Bi-Pd hybridization physics plays the key role in deriving the anomalous spectral evolution and the electronic properties of this system.Comment: Proceedings of DAE SSPS 201

Large Fermi-energy shift and suppression of trivial surface states in NbP Weyl semimetal thin films

Weyl semimetals, a class of 3D topological materials, exhibit a unique electronic structure featuring linear band crossings and disjoint surface states (Fermi-arcs). While first demonstrations of topologically driven phenomena have been realized in bulk crystals, efficient routes to control the electronic structure have remained largely unexplored. Here, a dramatic modification of the electronic structure in epitaxially grown NbP Weyl semimetal thin films is reported, using in situ surface engineering and chemical doping strategies that do not alter the NbP lattice structure and symmetry, retaining its topological nature. Through the preparation of a dangling-bond-free, P-terminated surface which manifests in a surface reconstruction, all the well-known trivial surface states of NbP are fully suppressed, resulting in a purely topological Fermi-arc dispersion. In addition, a substantial Fermi-energy shift from -0.2 to 0.3 eV across the Weyl points is achieved by surface chemical doping, unlocking access to the hitherto unexplored n-type region of the Weyl spectrum. These findings constitute a milestone toward surface-state and Fermi-level engineering of topological bands in Weyl semimetals, and, while there are still challenges in minimizing doping-driven disorder and grain boundary density in the films, they do represent a major advance to realize device heterostructures based on Weyl physics

Preparation, Characterization and electronic structure of Ti-doped Bi2_2Se3_3

We report the preparation of high-quality single crystal of Bi$_2$Se$_3$, a well-known topological insulator and its Ti-doped compositions using Bridgeman technique. Prepared single crystals were characterized by x-ray diffraction (XRD) to check the crystalline structure and energy dispersive analysis of x-rays for composition analysis. The XRD data of Ti-doped compounds show a small shift with respect to normal Bi$_2$Se$_3$ indicating changes in the lattice parameters while the structure type remained unchanged; this also establishes that Ti goes to the intended substitution sites. All the above analysis establishes successful preparation of these crystals with high quality using Bridgman technique. We carried out x-ray photo-emission spectroscopy to study the composition via investigating the core level spectra. Bi$_2$Se$_3$ spectra exhibit sharp and distinct features for the core levels and absence of impurity features. The core level spectra of the Ti-doped sample exhibit distinct signal due to Ti core levels. The analysis of the spectral features reveal signature of plasmon excitation and final state satellites; a signature of finite electron correlation effect in the electronic structure.Comment: Proceedings of DAE SSPS 201

Genetic diversity in some perennial plant species with-in short distances

Abstract: Distinct morphophysiological variations observed for over 2 years with-in short distances among four perennial plants indicated genetic diversity among the lines growing at three places. The isozyme and SDS polyacrylamide gel banding patterns as genetic markers were used to investigate four perennial species, namely, Dalbergia sissoo Roxb., Delonix regia (Boj.) Refin., Cassia fistula L. and Calotropis procera R. Br. Plant materials collected from three locations (Agra, Gwalior and Lucknow) differing in climo-edaphic variables were examined for 4 enzyme systems, viz., esterase, polyphenol oxidase, peroxidase and superoxide dismutase (EST, PPO, PRX and SOD). Among the four isozymes SOD and PRX revealed best discriminating power. Protein banding patterns as well as zymogram revealed that Dalbergia sissoo growing at Gwalior was closer to that of Agra; Delonix regia depicted highest similarity between Lucknow and Agra and Calotropis procera of Lucknow location was more closer to Gwalior than Agra. The results confirm genetic diversity in the species as a means of adaptation to differing climo-edaphic variables

Realization of epitaxial NbP and TaP Weyl semimetal thin films

Weyl semimetals (WSMs) exhibit an electronic structure governed by linear band dispersions and degenerate (Weyl) points that lead to exotic physical phenomena. While WSMs were established in bulk monopnictide compounds several years ago, the growth of thin films remains a challenge. Here, we report the bottom-up synthesis of single-crystalline NbP and TaP thin films, 9 to 70 nm thick, by means of molecular beam epitaxy. The as-grown epitaxial films feature a phosphorus-rich stoichiometry, a tensile-strained unit cell, and a homogeneous surface termination, unlike their bulk crystal counterparts. These properties result in an electronic structure governed by topological surface states as directly observed using in situ momentum photoemission microscopy, along with a Fermi-level shift of -0.2 eV with respect to the intrinsic chemical potential. Although the Fermi energy of the as-grown samples is still far from the Weyl points, carrier mobilities close to 103 cm2/(V s) have been measured at room temperature in patterned Hall-bar devices. The ability to grow thin films of Weyl semimetals that can be tailored by doping or strain, is an important step toward the fabrication of functional WSM-based devices and heterostructures

Synthesis and Evaluation of 1,3 Di-Substituted Schiff, Mannich Bases and Spiro Isatin Derivatives

Schiff bases of isatin with aminothiazole, its N-mannich bases and Spiro isatin derivatives were synthesized. Their chemical structures were confirmed by Infrared, 1H-Nuclear Magnetic Resonance data and elemental analysis. Antimicrobial evaluation was performed by the agar diffusion method against four pathogenic bacteria and two pathogenic fungi. Anti-inflammatory activity was tested by carragenin-induced rat paw edema and compounds were evaluated for analgesic action by the acetic acid-induced writhing method; Compounds Aa, Ab and A5, A6 were found to be active against bacteria and fungi. The compounds A3, A6, Aa and Ab showed anti-inflammatory activity, having a percentage protection value of 34.69, 32.65, 38.77 and 36.73 as compared with that of indomethacin, with % protection of 46.93. Similarly, the compounds Aa, Ab and A6 showed analgesic activity, with % protection of 67.51, 64.78 and 49.81 as compared with the standard with % protection of 79.56