15,342 research outputs found
Structural ordering driven anisotropic magnetoresistance, anomalous Hall resistance and its topological overtones in full-Heusler Co2MnSi thin films
We report the evolution of crystallographic structure, magnetic ordering and
electronic transport in thin films of full-Heusler alloy CoMnSi deposited
on (001) MgO with annealing temperatures (). By increasing the from
300C to 600C, the film goes from a disordered nanocrystalline
phase to ordered and finally to the ordered alloy. The saturation
magnetic moment improves with structural ordering and approaches the
Slater-Pauling value of per formula unit for =
600C. At this stage the films are soft magnets with coercive and
saturation fields as low as 7 mT and 350 mT, respectively. Remarkable
effects of improved structural order are also seen in longitudinal resistivity
() and residual resistivity ratio. A model based upon electronic
transparency of grain boundaries illucidates the transition from a state of
negative to positive with improved structural order. The
Hall resistivity () derives contribution from the normal scattering
of charge carriers in external magnetic field, the anomalous effect originating
from built-in magnetization and a small but distinct topological Hall effect in
the disordered phase. The carrier concentration () and mobility () have
been extracted from the high field data. The highly ordered films
are characterized by and of 1.19 10 m and 0.4
cm at room temperature. The dependence of on
indicates the dominance of skew scattering in our films, which
shows a monotonic drop on raising the . The topological Hall effect is
analyzed for the films annealed at 300C. ......Comment: 10 pages, 9 figures, 1 tabl
Structural Basis for the Anomalously Low Spontaneous Polarisation Values of the Polar Phase of Sr1-xCaxTiO3 (x=0.02, 0.04): Evidence for a Ferrielectric Ordering
Full pattern Le-Bail refinement using x-ray powder diffraction profiles of
Sr1-xCaxTiO3 for x=0.02, 0.04 in the temperature range 12 to 300 K reveals
anomalies in the unit cell parameters at 170, 225 K due to an
antiferrodistortive (cubic to tetragonal I4/mcm) phase transition and at ~32,
~34 K due to a transition to a polar phase (tetragonal I4/mcm to orthorhombic
Ic2m), respectively. The lower transition temperatures obtained by us are in
excellent agreement with those reported on the basis of the dielectric studies
by Bednorz and Muller, [10] who attributed these to ferroelectric transition.
Rietveld analysis of the diffraction profiles of the polar phase reveals
off-centre displacements of both Sr2+/Ca2+ and Ti4+ ions in the X-Y plane along
pseudocubic directions, in agreement with the experimentally reported
direction of easy polarization by Bednorz and Muller, but the resulting dipole
moments are shown to be ferrielectrically coupled in the neighbouring (001)
planes along the [001] direction leading to anomalously low values of the
spontaneous polarization at 12K.Comment: 5 pages, 4 figures and 1 tabl
Oscillating magnetoresistance due to fragile spin structure in metallic GdPd
Studies on the phenomenon of magnetoresistance (MR) have produced intriguing
and application-oriented outcomes for decades--colossal MR, giant MR and
recently discovered extremely large MR of millions of percents in semimetals
can be taken as examples. We report here the investigation of oscillating MR in
a cubic intermetallic compound GdPd, which is the only compound that
exhibits MR oscillations between positive and negative values. Our study shows
that a very strong correlation between magnetic, electrical and
magnetotransport properties is present in this compound. The magnetic structure
in GdPd is highly fragile since applied magnetic fields of moderate
strength significantly alter the spin arrangement within the system--a behavior
that manifests itself in the oscillating MR. Intriguing magnetotransport
characteristics of GdPd are appealing for field-sensitive device
applications, especially if the MR oscillation could materialize at higher
temperature by manipulating the magnetic interaction through perturbations
caused by chemical substitutions.Comment: 10 pages, 7 figures. A slightly modified version is published in
Scientific Report
Formation of double ring patterns on Co2MnSi Heusler alloy thin film by anodic oxidation under scanning probe microscope
Double ring formation on Co2MnSi (CMS) films is observed at electrical
breakdown voltage during local anodic oxidation (LAO) using atomic force
microscope (AFM). Corona effect and segregation of cobalt in the vicinity of
the rings is studied using magnetic force microscopy and energy dispersive
spectroscopy. Double ring forma-tion is attributed to the interaction of
ablated material with the induced magnetic field during LAO. Steepness of
forward bias transport characteristics from the unperturbed region of the CMS
film suggest a non equilibrium spin contribution. Such mesoscopic textures in
magnetic films by AFM tip can be potentially used for memory storage
applications.Comment: 7 pages, 5 figure
GRB000301C with peculiar afterglow emission
The CCD magnitudes in Johnson V and Cousins R and I photometric passbands are
determined for GRB 000301C afterglow starting ~ 1.5 day after the gamma-ray
burst. In fact we provide the earliest optical observations for this burst.
Light curves of the afterglow emissions in U, B, V, R, I, J and K' passbands
are obtained by combining the present measurements with the published data.
Flux decay shows a very uncommon variation relative to other well observed
GRBs. Overall, there is a steepening of the optical and near-infrared flux
decay caused by a geometric and sideways expanding jet. This is superimposed by
a short term variability especially during early time (Delta t < 8 days). The
cause of variability is not well understood, though it has occurred
simultaneously with similar amplitude in all the filters. We derive the early
and late time flux decay constants using jet model. The late time flux decay is
the steepest amongst the GRB OTs observed so far with alpha ~ 3. Steepening in
the flux decay seems to have started simultaneously around Delta t ~ 7.6 day in
all passbands. The value of spectral index in the optical-near IR region is ~
-1.0. Redshift determination with z=2.0335 indicates cosmological origin of the
GRB having a luminosity distance of 16.6 Gpc. Thus it becomes the second
farthest amongst the GRBs with known distances. An indirect estimate of the
fluence > 20 keV indicates, if isotropic,> =10^53 ergs of release of energy.
The enormous amount of released energy will be reduced, if the radiation is
beamed which is the case for this event. Using a jet break time of 7.6 days, we
infer a jet opening angle of ~ 0.15 radian. This means the energy released is
reduced by a factor of ~ 90 relative to the isotropic value.Comment: LaTeX file, 11 pages including 4 figures, uses psfig.sty, Bull.
Astron. Society of India(accepted, Sept, 2000 issue
The effect of asymmetric disorder on the diffusion in arbitrary networks
Considering diffusion in the presence of asymmetric disorder, an exact
relationship between the strength of weak disorder and the electric resistance
of the corresponding resistor network is revealed, which is valid in arbitrary
networks. This implies that the dynamics are stable against weak asymmetric
disorder if the resistance exponent of the network is negative. In the
case of , numerical analyses of the mean first-passage time on
various fractal lattices show that the logarithmic scaling of with the
distance , , is a general rule, characterized by a new
dynamical exponent of the underlying lattice.Comment: 5 pages, 4 figure
Premartensite to martensite transition and its implications on the origin of modulation in Ni2MnGa ferromagnetic shape memory alloy
We present here results of temperature dependent high resolution synchrotron
x-ray powder diffraction study of sequence of phase transitions in Ni2MnGa. Our
results show that the incommensurate martensite phase results from the
incommensurate premartensite phase, and not from the austenite phase assumed in
the adaptive phase model. The premartensite phase transforms to the martensite
phase through a first order phase transition with coexistence of the two phases
in a broad temperature interval (~40K), discontinuous change in the unit cell
volume as also in the modulation wave vector across the transition temperature
and considerable thermal hysteresis in the characteristic transition
temperatures. The temperature variation of the modulation wave vector q shows
smooth analytic behaviour with no evidence for any devilish plateau
corresponding to an intermediate or ground state commensurate lock-in phases.
The existence of the incommensurate 7M like modulated structure down to 5K
suggests that the incommensurate 7M like modulation is the ground state of
Ni2MnGa and not the Bain distorted tetragonal L10 phase or any other lock-in
phase with a commensurate modulation. These findings can be explained within
the framework of the soft phonon model
Large Miscibility Gap in the Ba(Mn_xFe_{1-x})2As2 System
The compounds BaMn2As2 and BaFe2As2 both crystallize in the
body-centered-tetragonal ThCr2Si2-type (122-type) structure at room temperature
but exhibit quite different unit cell volumes and very different magnetic and
electronic transport properties. Evidently reflecting these disparities, we
have discovered a large miscibility gap in the system Ba(Mn_xFe_{1-x})2As2.
Rietveld refinements of powder x-ray diffraction (XRD) measurements on samples
slow-cooled from 1000 C to room temperature (RT) reveal a two-phase mixture of
BaMn2As2 and Ba(Mn_{0.12}Fe_{0.88})2As2 phases together with impurity phases
for x = 0.2, 0.4, 0.5, 0.6 and 0.8. We infer that there exists a miscibility
gap in this system at 300 K with composition limits 0.12 < x < 1. For samples
quenched from 1000 C to 77 K, the refinements of RT XRD data indicate that the
miscibility gap at RT narrows at 1000 C to 0.2 < x < 0.8. Samples with x=0.4,
0.5 and 0.6 quenched from 1100-1400 C to 77 K contain a single 122-type phase
together with significant amounts of Fe_{1-x}Mn_xAs and FeAs2 impurity phases.
These results indicate that the system is not a pseudo-binary system over the
whole composition range and that the 122-type phase has a significant
homogeneity range at these temperatures. Magnetic susceptibility, electrical
resistivity and heat capacity measurements versus temperature of the
single-phase quenched polycrystalline samples with x = 0.2 and 0.8 and for
lightly doped BaMn2As2 crystals are reported.Comment: 14 pages, 16 figures, 3 tables; published versio
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