Synthesis, Structure and Properties of Boron and Nitrogen Doped Graphene

Two-dimensional graphene exhibits many fascinating properties such as ballistic electronic conduction and quantum Hall effect at room temperature.1-4 Graphene doped electrochemically or through charge-transfer with electron-donor and -acceptor molecules,5-7 shows marked changes in electronic structure, with characteristic signatures in the Raman spectra.5-10 Substitutional doping, universally used in tuning properties of semiconductors, could be a powerful tool to control the electronic properties of graphene. Here, we present the structure and properties of boron and nitrogen doped graphenes, obtained by more than one method involving arc discharge in appropriate gaseous atmosphere, by using modified graphite electrode or by the transformation of nano-diamond. Using a combination of experiment and firstprinciples theory, we demonstrate systematic changes in the carrier-concentration and electronic structure of graphenes with B/N-doping, accompanied by stiffening of the Gband and intensification of the defect related D-band in the Raman spectra. Such n/p - type graphenes obtained without external fields or chemical agents should find device applications.Comment: 12 pages, 5 figures, 1 tabl

Local density of states and scanning tunneling currents in graphene

We present exact analytical calculations of scanning tunneling currents in locally disordered graphene using a multimode description of the microscope tip. Analytical expressions for the local density of states (LDOS) are given for energies beyond the Dirac cone approximation. We show that the LDOS at the $A$ and $B$ sublattices of graphene are out of phase by $\pi$ implying that the averaged LDOS, as one moves away from the impurity, shows no trace of the $2q_F$ (with $q_F$ the Fermi momentum) Friedel modulation. This means that a STM experiment lacking atomic resolution at the sublattice level will not be able of detecting the presence of the Friedel oscillations [this seems to be the case in the experiments reported in Phys. Rev. Lett. {\bf 101}, 206802 (2008)]. The momentum maps of the LDOS for different types of impurities are given. In the case of the vacancy, $2q_F$ features are seen in these maps. In all momentum space maps, $K$ and $K+K^\prime$ features are seen. The $K+K^\prime$ features are different from what is seen around zero momentum. An interpretation for these features is given. The calculations reported here are valid for chemical substitution impurities, such as boron and nitrogen atoms, as well as for vacancies. It is shown that the density of states close to the impurity is very sensitive to type of disorder: diagonal, non-diagonal, or vacancies. In the case of weakly coupled (to the carbon atoms) impurities, the local density of states presents strong resonances at finite energies, which leads to steps in the scanning tunneling currents and to suppression of the Fano factor.Comment: 21 pages. Figures 6 and 7 are correctly displayed in this new versio