Electrical characteristics of amorphous iron-tungsten contacts on silicon

The electrical characteristics of amorphous Fe-W contacts have been determined on both p-type and n-type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities, pc=1×10^−7 and pc=2.8×10^−6, were measured on n+ and p+ silicon, respectively. These values remain constant after thermal treatment up to at least 500°C. A barrier height, φBn=0.61 V, was measured on n-type silicon

Reactively sputtered RuO2 diffusion barriers

The thermal stability of reactively sputtered RuO2 films is investigated from the point of view of their application as diffusion barriers in silicon contact metallizations with an Al overlayer. Backscattering spectra of Si/RuO2/Al samples and electrical measurements on shallow junction diodes with Si/TiSi2.3/RuO2/Al contacts both show that RuO2 films are effective diffusion barriers between Al and Si for 30-min annealing at temperatures as high as 600°C

WxN1–x alloys as diffusion barriers between Al and Si

Reactively sputtered tungsten nitride (WxN1–x) layers are investigated as diffusion barriers between Al overlayers and Si shallow n + -p junctions. Both amorphous W80 N20 and polycrystalline W60 N40 films were found to be very effective in preserving the integrity of the n + -p diodes for 30-min vacuum annealing up to 575 °C. Diode failure at higher temperatures is caused by localized penetration of Al into through the WxN1–x barriers. The effectiveness of the barrier decreases for polycrystalline W90 N10 and is worse for pure W

Lattice gas model for fragmentation: From Argon on Scandium to Gold on Gold

The recent fragmentation data for central collisions of Gold on Gold are even qualitatively different from those for central collisions of Argon on Scandium. The latter can be fitted with a lattice gas model calculation. Effort is made to understand why the model fails for Gold on Gold. The calculation suggests that the large Coulomb interaction which is operative for the larger system is responsible for this discrepancy. This is demonstrated by mapping the lattice gas model to a molecular dynamics calculation for disassembly. This mapping is quite faithful for Argon on Scandium but deviates strongly for Gold on Gold. The molecular dynamics calculation for disassembly reproduces the characteristics of the fragmentation data for both Gold on Gold and Argon on Scandium.Comment: 13 pages, Revtex, 8 figures in ps files, submitted to Phys. Rev.

Demonstration of Non-Deterministic Quantum Logic Operations using Linear Optical Elements

Knill, Laflamme, and Milburn recently showed that non-deterministic quantum logic operations could be performed using linear optical elements, additional photons (ancilla), and post-selection based on the output of single-photon detectors [Nature 409, 46 (2001)]. Here we report the experimental demonstration of two logic devices of this kind, a destructive controlled-NOT (CNOT) gate and a quantum parity check. These two devices can be combined with a pair of entangled photons to implement a conventional (non-destructive) CNOT that succeeds with a probability of 1/4.Comment: 4 pages, 5 figures; Minor change

High-pressure study of the basal-plane anisotropy of the upper critical field of the topological superconductor SrxBi2Se3

We report a high-pressure transport study of the upper-critical field, $B_{c2}(T)$, of the topological superconductor Sr$_{0.15}$Bi$_2$Se$_3$ ($T_c = 3.0$ K). $B_{c2}(T)$ was measured for magnetic fields directed along two orthogonal directions, $a$ and $a^*$, in the trigonal basal plane. While superconductivity is rapidly suppressed at the critical pressure $p_c \sim 3.5$ GPa, the pronounced two-fold basal-plane anisotropy $B_{c2}^a/B_{c2}^{a^*} = 3.2$ at $T=0.3$ K, recently reported at ambient pressure (Pan et al., 2016), is reinforced and attains a value of $\sim 5$ at the highest pressure (2.2 GPa). The data reveal that the unconventional superconducting state with broken rotational symmetry is robust under pressure

Development of digital computer program for thermal network correction. Phase 1 - Investigation/feasibility study Final report

Feasibility of analytical error analysis applied to thermal network solution

Technicolor corrections to b\bar{b} -> W^{\pm}\pi^{\mp}_t at the CERN Large Hadron Collider

In this paper we calculate the technicolor correction to the production of a charged top pion in association with a W boson via b\bar{b} annihilation at the CERN Large Hadron Collider in the context of the topcolor assisted technicolor model. We find that the cross section of pp \rightarrow b\bar{b} -> W^{\pm}\pi_t^{\mp} at the tree level can reach a few hundred femtobarns for reasonable ranges of the parameters, roughly corresponding to the result of the process pp -> b\bar{b} -> W^{\pm}H^{\mp} in the minimal supersymmetric standard model; the relative corrections arising from the one-loop diagrams are about a few percent to two dozen percent, and they will increase the cross section at the tree level. As a comparison, we also discuss the size of the hadron cross section via the other subprocess gg -> W^{\pm}\pi_t^{\mp}.Comment: 6 pages, 5 figure