3,758 research outputs found
Layout Decomposition for Quadruple Patterning Lithography and Beyond
For next-generation technology nodes, multiple patterning lithography (MPL)
has emerged as a key solution, e.g., triple patterning lithography (TPL) for
14/11nm, and quadruple patterning lithography (QPL) for sub-10nm. In this
paper, we propose a generic and robust layout decomposition framework for QPL,
which can be further extended to handle any general K-patterning lithography
(K4). Our framework is based on the semidefinite programming (SDP)
formulation with novel coloring encoding. Meanwhile, we propose fast yet
effective coloring assignment and achieve significant speedup. To our best
knowledge, this is the first work on the general multiple patterning
lithography layout decomposition.Comment: DAC'201
L-Shape based Layout Fracturing for E-Beam Lithography
Layout fracturing is a fundamental step in mask data preparation and e-beam
lithography (EBL) writing. To increase EBL throughput, recently a new L-shape
writing strategy is proposed, which calls for new L-shape fracturing, versus
the conventional rectangular fracturing. Meanwhile, during layout fracturing,
one must minimize very small/narrow features, also called slivers, due to
manufacturability concern. This paper addresses this new research problem of
how to perform L-shaped fracturing with sliver minimization. We propose two
novel algorithms. The first one, rectangular merging (RM), starts from a set of
rectangular fractures and merges them optimally to form L-shape fracturing. The
second algorithm, direct L-shape fracturing (DLF), directly and effectively
fractures the input layouts into L-shapes with sliver minimization. The
experimental results show that our algorithms are very effective
Managing the Provenance of Crowdsourced Disruption Reports
A paid open access option is available for this journal. Authors own final version only can be archived Publisher's version/PDF cannot be used On author's website immediately On any open access repository after 12 months from publication Published source must be acknowledged Must link to publisher version Set phrase to accompany link to published version (see policy) Articles in some journals can be made Open Access on payment of additional chargePublisher PD
Methodology for standard cell compliance and detailed placement for triple patterning lithography
As the feature size of semiconductor process further scales to sub-16nm
technology node, triple patterning lithography (TPL) has been regarded one of
the most promising lithography candidates. M1 and contact layers, which are
usually deployed within standard cells, are most critical and complex parts for
modern digital designs. Traditional design flow that ignores TPL in early
stages may limit the potential to resolve all the TPL conflicts. In this paper,
we propose a coherent framework, including standard cell compliance and
detailed placement to enable TPL friendly design. Considering TPL constraints
during early design stages, such as standard cell compliance, improves the
layout decomposability. With the pre-coloring solutions of standard cells, we
present a TPL aware detailed placement, where the layout decomposition and
placement can be resolved simultaneously. Our experimental results show that,
with negligible impact on critical path delay, our framework can resolve the
conflicts much more easily, compared with the traditional physical design flow
and followed layout decomposition
E-BLOW: E-Beam Lithography Overlapping aware Stencil Planning for MCC System
Electron beam lithography (EBL) is a promising maskless solution for the
technology beyond 14nm logic node. To overcome its throughput limitation,
recently the traditional EBL system is extended into MCC system. %to further
improve the throughput. In this paper, we present E-BLOW, a tool to solve the
overlapping aware stencil planning (OSP) problems in MCC system. E-BLOW is
integrated with several novel speedup techniques, i.e., successive relaxation,
dynamic programming and KD-Tree based clustering, to achieve a good performance
in terms of runtime and solution quality. Experimental results show that,
compared with previous works, E-BLOW demonstrates better performance for both
conventional EBL system and MCC system
- β¦