Pembudayaan stem pelajar ulul albab melalui modul sains forensik

Pelbagai pendekatan pendidikan dewasa ini dilaksanakan selaras dengan fokus Kementerian Pendidikan dan tuntutan masyarakat di Malaysia untuk memberi penekanan terhadap pendidikan berteraskan pengajian Al-Quran, As-Sunnah serta sains dan teknologi

UPMSTEM tingkat kemahiran sensorial anak-anak pendidikan khas

BUKIT BERUNTUNG, 23 April – Seramai 78 anak-anak berkeperluan khas (MBK) dan lebih 1,600 orang murid tahap rendah aliran perdana menyertai aktiviti hands-on dalam slot karnival STREAM dan slot Science Magic Show di Sekolah Kebangsaan Bukit Beruntung 2 (SKBB2), di sini

Effect of deposition time on the morphology and structural properties of indium antimonide nanowires (InSb) by template assisted electrodeposition

Semiconductor InSb nanowire have been synthesized by the typical three-electrode electrochemical cell. The deposition is from tartaric acid aqueous solution into anodic alumina oxide (AAO) at different time deposition varies from 15 to 40 mins with constant deposition potential of -1.5 V. The morphology and structural properties of InSb nanowires were studied using XRD and FESEM equipped with EDX. The nanowires have diameter varying and the length of the template assisted InSb nanowires varied from the deposition time of 15 to 40 mins, from 100 to 200 nm respectively. The length of synthesized InSb nanowires increases from 1.8 to 5.5 μm with the increasing deposition time of 15 to 40 min. The XRD analysis shows that the diffraction peaks of nanowires are on a plane (111) and (220). Based on the elemental composition from the EDX, almost stoichiometric composition with ratio 1:1.1 was achieved for the samples deposited for 35 and 40 minutes

Piezoelectric properties of zinc oxide nanostructure synthesized via chemical bath solution

We report our investigation on the growth of ZnO nanostructure on a patterned interdigitated microelectrode (IDE) using chemical bath deposition (CBD). Piezoresponse force microscopic techniques were used to characterise the piezoelectric material domain of the grown ZnO nanostructures. The synthesised ZnO nanostructures exhibits a hexagonal wurtzite structure with the c-axis preferred crystal orientation in the (002) plane. The average thickness of the ZnO seed layer was 467.5 nm, whereas the diameter and length of ZnO nanostructure were measured to be 2.73 μm and 6.96 μm respectively. The combine effect of Zinc nitrate and HTMA concentration and seed layer thickness are considered as the main reason for crystal morphology evolution. The ZnO nanostructures exhibited a phase switch of the response and hysteresis in the plot of phase versus dc voltage, as evidenced by the polarization exchanging of its ferroelectric behaviour. These results provide a fundamental understanding of piezoresponse ZnO nanostructure for future energy applications

Ellipsometric study of Si1-x Gex alloy

A report on ellipsometric studies of Si0.5 Ge0.5 and Si0.7 Ge0.3 thin films is described. The samples were earlier prepared from SiGe disks of 3” diameter using RF magnetron sputtering and the films were deposited onto glass substrates at room temperature. Some of the optical properties were investigated using an ellipsometer. In this method, we investigate the changes in refractive indices, n and extinction coefficients, k with film thickness as well as the relevant dielectric constant, ε. The results showed that, at a wavelength of 632.80 nm, n was found to increase with an increase of the germanium contents

Growth of InP nanowires on silicon using a thin buffer layer

InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology suitable for the NW growth. More than 97% vertical yield is achieved on the buffer layer and the morphology and photoluminescence of the NWs are similar to those grown on InP(111)B substrate

Tapered multimode fiber sensor for ethanol sensing application

Ethanol is a widely used chemical in the industry which can be volatile and flammable. However, the availability of optical sensors for ethanol is still in its maturing stage. In this project, a tapered multimode fiber optic sensor for detection of ethanol with different concentrations in water was developed. The working principle of the sensor is based on absorption spectroscopy in the visible wavelength ranges. The tapered multimode fiber was fabricated using Vytran glass processing workstation to achieve waist diameter and length of 40 μm and 20 mm, respectively. Upon exposure to ethanol concentrations of ranges 5% to 40%, the developed fiber sensor absorbance increases linearly. The sensor shows fast response and recovery as low as 14 s and 27 s, respectively