Unlocking the Single‐Domain Epitaxy of Halide Perovskites

The growth of epitaxial semiconductors and oxides has long since revolutionized the electronics and optics fields, and continues to be exploited to uncover new physics stemming from quantum interactions. While the recent emergence of halide perovskites offers exciting new opportunities for a range of thin‐film electronics, the principles of epitaxy have yet to be applied to this new class of materials and the full potential of these materials is still not yet known. In this work, single‐domain inorganic halide perovskite epitaxy is demonstrated. This is enabled by reactive vapor phase deposition onto single crystal metal halide substrates with congruent ionic interactions. For the archetypical halide perovskite, cesium tin bromide, two epitaxial phases, a cubic phase and tetragonal phase, are uncovered which emerge via stoichiometry control that are both stabilized with vastly differing lattice constants and accommodated via epitaxial rotation. This epitaxial growth is exploited to demonstrate multilayer 2D quantum wells of a halide‐perovskite system. This work ultimately unlocks new routes to push halide perovskites to their full potential.Single‐domain halide perovskite heteroepitaxy is demonstrated and multiple epitaxial phases of archetypical halide perovskite are uncovered via stiochiometry control. The epitaxial growth is further exploited to demonstrate multilayer 2D quantum wells of a halide‐perovskite system and can ultimately enable their full potential in many emerging applications.Peer Reviewedhttps://deepblue.lib.umich.edu/bitstream/2027.42/140019/1/admi201701003-sup-0001-S1.pdfhttps://deepblue.lib.umich.edu/bitstream/2027.42/140019/2/admi201701003_am.pdfhttps://deepblue.lib.umich.edu/bitstream/2027.42/140019/3/admi201701003.pd

Perovskites: Unlocking the Single‐Domain Epitaxy of Halide Perovskites (Adv. Mater. Interfaces 22/2017)

Peer Reviewedhttps://deepblue.lib.umich.edu/bitstream/2027.42/139894/1/admi201770114.pd

Enhanced Electroluminescence Efficiency in Metal Halide Nanocluster Based Light Emitting Diodes through Apical Halide Exchange

Metal halide nanoclusters represent an attractive class of molecular building blocks for the design of functional materials with superior optical properties that can be utilized in a range of applications. Here, we demonstrate red and near-infrared light emitting diodes with a maximum external quantum efficiency >1%, utilizing phosphorescent octahedral molybdenum iodide nanoclusters. Efficiency improvement in these devices is realized by substituting heavier ligands in the apical nanocluster position that lead to the improvement in photoluminescence and exciton formation efficiencies in the nanoclusters. These results highlight how modulation of nanocluster salts with key terminal ligands has a profound effect on photoluminescence as well as electrical injection