A spintronic source of circularly polarized single photons

We present a spintronic single photon source which emits circularly polarized light, where the helicity is determined by an applied magnetic field. Photons are emitted from an InGaAs quantum dot inside an electrically operated spin light-emitting diode, which comprises the diluted magnetic semiconductor ZnMnSe. The circular polarization degree of the emitted light is high, reaching 83% at an applied magnetic field of 2T and 96% at 6 T. Autocorrelation traces recorded in pulsed operation mode prove the emitted light to be antibunched. The two circular polarization states could be used for representing quantum states |0> and |1> in quantum cryptography implementations

Vortex states in patterned exchange biased NiO/Ni samples

We investigated the magnetization reversal of arrays of exchange biased NiO/Ni squares with superconducting quantum interference device magnetometry and micromagnetic simulations. The edges of the squares were 0.5, 1.5, and 3.0 $\mu$m long. The NiO/Ni structures exhibit vortexlike hysteresis loops and micromagnetic calculations show that this feature is due to several vortices nucleating in the islands. Furthermore, for the arrays with squares of 1.5 $\mu$m edge length, the sign of the exchange bias field changes, as compared to the same continuous NiO/Ni layer. We attribute the vortex nucleation and the change of the exchange bias field to the interplay between shape and unidirectional anisotropy.Comment: 6 pages, 7 figure

Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers

Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its potential has been demonstrated both for efficient spin injection in lateral spin valves and as a barrier in magnetic tunnel junctions (MTJs). Here we reveal the effect of point defects inevitably present in mechanically exfoliated hBN on the tunnel magnetoresistance of Co-hBN-NiFe MTJs. We observe a clear enhancement of both the conductance and magnetoresistance of the junction at well-defined bias voltages, indicating resonant tunneling through magnetic (spin-polarized) defect states. The spin polarization of the defect states is attributed to exchange coupling of a paramagnetic impurity in the few-atomic-layer thick hBN to the ferromagnetic electrodes. This is confirmed by excellent agreement with theoretical modelling. Our findings should be taken into account in analyzing tunneling processes in hBN-based magnetic devices. More generally, our study shows the potential of using atomically thin hBN barriers with defects to engineer the magnetoresistance of MTJs and to achieve spin filtering, opening the door towards exploiting the spin degree of freedom in current studies of point defects as quantum emitters