Annealed disorder, rare regions, and local moments: A novel mechanism for metal-insulator transitions

Local magnetic moments in disordered sytems can be described in terms of annealed magnetic disorder, in addition to the underlying quenched disorder. It is shown that for noninteracting electron systems at zero temperature, the annealed disorder leads to a new mechanism, and a new universality class, for a metal-insulator transition. The transition is driven by a vanishing of the thermodynamic density susceptibility rather than by localization effects. The critical behavior near two-dimensions is determined, and the underlying physics is discussed.Comment: 4 pp., LaTeX, no figs., final version as publishe

Revisiting the Theory of Finite Size Scaling in Disordered Systems: \nu Can Be Less Than 2/d

For phase transitions in disordered systems, an exact theorem provides a bound on the finite size correlation length exponent: \nu_{FS}<= 2/d. It is believed that the true critical exponent \nu of a disorder induced phase transition satisfies the same bound. We argue that in disordered systems the standard averaging introduces a noise, and a corresponding new diverging length scale, characterized by \nu_{FS}=2/d. This length scale, however, is independent of the system's own correlation length \xi. Therefore \nu can be less than 2/d. We illustrate these ideas on two exact examples, with \nu < 2/d. We propose a new method of disorder averaging, which achieves a remarkable noise reduction, and thus is able to capture the true exponents.Comment: 4 pages, Latex, one figure in .eps forma

Typical-Medium Theory of Mott-Anderson Localization

The Mott and the Anderson routes to localization have long been recognized as the two basic processes that can drive the metal-insulator transition (MIT). Theories separately describing each of these mechanisms were discussed long ago, but an accepted approach that can include both has remained elusive. The lack of any obvious static symmetry distinguishing the metal from the insulator poses another fundamental problem, since an appropriate static order parameter cannot be easily found. More recent work, however, has revisited the original arguments of Anderson and Mott, which stressed that the key diference between the metal end the insulator lies in the dynamics of the electron. This physical picture has suggested that the "typical" (geometrically averaged) escape rate from a given lattice site should be regarded as the proper dynamical order parameter for the MIT, one that can naturally describe both the Anderson and the Mott mechanism for localization. This article provides an overview of the recent results obtained from the corresponding Typical-Medium Theory, which provided new insight into the the two-fluid character of the Mott-Anderson transition.Comment: to be published in "Fifty Years of Anderson localization", edited by E. Abrahams (World Scientific, Singapore, 2010); 29 pages, 22 figures

Field-induced breakdown of the quantum Hall effect

A numerical analysis is made of the breakdown of the quantum Hall effect caused by the Hall electric field in competition with disorder. It turns out that in the regime of dense impurities, in particular, the number of localized states decreases exponentially with the Hall field, with its dependence on the magnetic and electric field summarized in a simple scaling law. The physical picture underlying the scaling law is clarified. This intra-subband process, the competition of the Hall field with disorder, leads to critical breakdown fields of magnitude of a few hundred V/cm, consistent with observations, and accounts for their magnetic-field dependence \propto B^{3/2} observed experimentally. Some testable consequences of the scaling law are discussed.Comment: 7 pages, Revtex, 3 figures, to appear in Phys. Rev.

Quantum Hall Effect induced by electron-electron interaction in disordered GaAs layers with 3D spectrum

It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional single-particle spectrum is induced by the electron-electron interaction. The Hall resistance R_xy of the thinnest sample reveals a wide plateau at small activation energy E_a=0.4 K found in the temperature dependence of the transverse resistance R_xx. The different minima in the transverse conductance G_xx of the different samples show a universal temperature dependence (logarithmic in a large range of rescaled temperatures T/T_0) which is reminiscent of electron-electron-interaction effects in coherent diffusive transport.Comment: 6 pages, 3 figures, 1 tabl

The RKKY interactions and the Mott Transition

A two-site cluster generalization of the Hubbard model in large dimensions is examined in order to study the role of short-range spin correlations near the metal-insulator transition (MIT). The model is mapped to a two-impurity Kondo-Anderson model in a self-consistently determined bath, making it possible to directly address the competition between the Kondo effect and RKKY interactions in a lattice context. Our results indicate that the RKKY interactions lead to qualitative modifications of the MIT scenario even in the absence of long range antiferromagnetic ordering.Comment: 10 pages, 10 figures; to appear in Phys. Rev. B (1999

What Does The Korringa Ratio Measure?

We present an analysis of the Korringa ratio in a dirty metal, emphasizing the case where a Stoner enhancement of the uniform susceptibilty is present. We find that the relaxation rates are significantly enhanced by disorder, and that the inverse problem of determining the bare density of states from a study of the change of the Knight shift and relaxation rates with some parameter, such as pressure, has rather constrained solutions, with the disorder playing an important role. Some preliminary applications to the case of chemical substitution in the Rb$_{3-x}$K$_x$C$_{60}$ family of superconductors is presented and some other relevant systems are mentioned.Comment: 849, Piscataway, New Jersey 08855 24 June 199

Anomalous NMR Spin-Lattice Relaxation in SrB_{6} and Ca_{1-x}La_{x}B_{6}

We report the results of {11}B nuclear magnetic resonance (NMR) measurements of SrB_{6} and Ca_{0.995}La_{0.05}B_{6} below room temperature. Although the electrical resistivities of these two materials differ substantially, their {11}B-NMR responses exhibit some strikingly common features. Both materials exhibit ferromagnetic order, but their {11}B-NMR spectra reveal very small hyperfine fields at the Boron sites. The spin lattice relaxation T_{1}^{-1} varies considerably with external field but changes with temperature only below a few K. We discuss these unusual results by considering various different scenarios for the electronic structure of these materials.Comment: Accepted for publication in Phys. Rev. B Rapid communication, 4 pages, 3 figures. This manuscript replaces an earlier version and includes some minor changes in the text and in Fig.

Magnetoresistance of composite fermions at \nu=1/2

We have studied temperature dependence of both diagonal and Hall resistivity in the vicinity of $\nu=1/2$. Magnetoresistance was found to be positive and almost independent of temperature: temperature enters resistivity as a logarithmic correction. At the same time, no measurable corrections to the Hall resistivity has been found. Neither of these results can be explained within the mean-field theory of composite fermions by an analogy with conventional low-field interaction theory. There is an indication that interactions of composite fermions with fluctuations of the gauge field may reconcile the theory and experiment.Comment: 9 pages, 4 figure

Giant Magnetoresistance Oscillations Induced by Microwave Radiation and a Zero-Resistance State in a 2D Electron System with a Moderate Mobility

The effect of a microwave field in the frequency range from 54 to 140 $\mathrm{GHz}$ on the magnetotransport in a GaAs quantum well with AlAs/GaAs superlattice barriers and with an electron mobility no higher than $10^6$ $\mathrm{cm^2/Vs}$ is investigated. In the given two-dimensional system under the effect of microwave radiation, giant resistance oscillations are observed with their positions in magnetic field being determined by the ratio of the radiation frequency to the cyclotron frequency. Earlier, such oscillations had only been observed in GaAs/AlGaAs heterostructures with much higher mobilities. When the samples under study are irradiated with a 140-$\mathrm{GHz}$ microwave field, the resistance corresponding to the main oscillation minimum, which occurs near the cyclotron resonance, appears to be close to zero. The results of the study suggest that a mobility value lower than $10^6$ $\mathrm{cm^2/Vs}$ does not prevent the formation of zero-resistance states in magnetic field in a two-dimensional system under the effect of microwave radiation.Comment: 4 pages, 2 figur