Compact Binary Waveform Center-of-Mass Corrections

We present a detailed study of the center-of-mass (c.m.) motion seen in simulations produced by the Simulating eXtreme Spacetimes (SXS) collaboration. We investigate potential physical sources for the large c.m. motion in binary black hole simulations and find that a significant fraction of the c.m. motion cannot be explained physically, thus concluding that it is largely a gauge effect. These large c.m. displacements cause mode mixing in the gravitational waveform, most easily recognized as amplitude oscillations caused by the dominant (2,$\pm$2) modes mixing into subdominant modes. This mixing does not diminish with increasing distance from the source; it is present even in asymptotic waveforms, regardless of the method of data extraction. We describe the current c.m.-correction method used by the SXS collaboration, which is based on counteracting the motion of the c.m. as measured by the trajectories of the apparent horizons in the simulations, and investigate potential methods to improve that correction to the waveform. We also present a complementary method for computing an optimal c.m. correction or evaluating any other c.m. transformation based solely on the asymptotic waveform data.Comment: 20 pages, 15 figure

Field-induced resonant tunneling between parallel two-dimensional electron systems

Resonant tunneling between two high-mobility two-dimensional (2D) electron systems in a double quantum well structure has been induced by the action of an external Schottky gate field. Using one 2D electron gas as source and the other as drain, the tunnel conductance between them shows a strong resonance when the gate field aligns the ground subband edges of the two quantum wells

Independently contacted two-dimensional electron systems in double quantum wells

A new technique for creating independent ohmic contacts to closely spaced two-dimensional electron systems in double quantum well (DQW) structures is described. Without use of shallow diffusion or precisely controlled etching methods, the present technique results in low-resistance contacts which can be electrostatically switched between the two-conducting layers. The method is demonstrated with a DQW consisting of two 200 Å GaAs quantum wells separated by a 175 Å AlGaAs barrier. A wide variety of experiments on Coulomb and tunnel-coupled 2D electron systems is now accessible

Charge metastability and hysteresis in the quantum Hall regime

We report simultaneous quasi-dc magnetotransport and high frequency surface acoustic wave measurements on bilayer two-dimensional electron systems in GaAs. Near strong integer quantized Hall states a strong magnetic field sweep hysteresis in the velocity of the acoustic waves is observed at low temperatures. This hysteresis indicates the presence of a metastable state with anomalously high conductivity in the interior of the sample. This non-equilibrium state is not revealed by conventional low frequency transport measurements which are dominated by dissipationless transport at the edge of the 2D system. We find that a field-cooling technique allows the equilibrium charge configuration within the interior of the sample to be established. A simple model for this behavior is discussed.Comment: 8 pages, 4 postscript figure

Coupling ideality of integrated planar high-Q microresonators

Chipscale microresonators with integrated planar optical waveguides are useful building blocks for linear, nonlinear and quantum optical devices. Loss reduction through improving fabrication processes has resulted in several integrated micro resonator platforms attaining quality (Q) factors of several millions. However only few studies have investigated design-dependent losses, especially with regard to the resonator coupling section. Here we investigate design-dependent parasitic losses, described by the coupling ideality, of the commonly employed microresonator design consisting of a microring resonator waveguide side-coupled to a straight bus waveguide. By systematic characterization of multi-mode high-Q silicon nitride microresonator devices, we show that this design can suffer from low coupling ideality. By performing full 3D simulations to numerically investigate the resonator to bus waveguide coupling, we identify the coupling to higher-order bus waveguide modes as the dominant origin of parasitic losses which lead to the low coupling ideality. Using suitably designed bus waveguides, parasitic losses are mitigated, and a nearly unity ideality and strong overcoupling (i.e. a ratio of external coupling to internal resonator loss rate > 9) are demonstrated. Moreover we find that different resonator modes can exchange power through the coupler, which therefore constitutes a mechanism that induces modal coupling, a phenomenon known to distort resonator dispersion properties. Our results demonstrate the potential for significant performance improvements of integrated planar microresonators, achievable by optimized coupler designs.Comment: 8 pages, 3 figures, 1 tabl

Bilayer Quantum Hall Systems at nuT = 1: Coulomb Drag and the Transition from Weak to Strong Interlayer Coupling

Measurements revealing anomalously large frictional drag at the transition between the weakly and strongly coupled regimes of a bilayer two-dimensional electron system at total Landau level filling factor nuT = 1 are reported. This result suggests the existence of fluctuations, either static or dynamic, near the phase boundary separating the quantized Hall state at small layer separations from the compressible state at larger separations. Interestingly, the anomalies in drag seem to persist to larger layer separations than does interlayer phase coherence as detected in tunneling

Multiquantum well structure with an average electron mobility of 4.0×10^6 cm^2/V s

We report a modulation-doped multiquantum well structure which suppresses the usual ambient light effect associated with modulation doping. Ten GaAs quantum wells 300-Å wide are symmetrically modulation doped using Si δ doping at the center of 3600-Å-wide Al0.1Ga0.9As barriers. The low field mobility of each well is 4.0×10^6 cm/V s at a density of 6.4×10^10 cm^−2 measured at 0.3 K either in the dark, or during, or after, exposure to light. This mobility is an order of magnitude improvement over previous work on multiwells