14 research outputs found
Saturation behavior of extrinsic photoconductivity in GaP light emitting diodes at high infrared intensities
Get PDFSaturation of extrinsic photoconductivity in GaP:N(Zn, Te) diodes could be achieved by excitation with a TEA-CO2-laser. At wavelengths in the 10 mgrm range intensities of several 100 kW/cm2 being near the damage threshold were applied. Carrier lifetimes of 60 ps at 4.2 K and 200 ps at 77 K could be estimated. The only conceivable mechanism explaining these short time constants is the capture of infrared excited holes by ionized shallow acceptors in the highly compensated p-side of the diode
Effect of a valence-band barrier on the quantum efficiency and background-limited dynamic resistance of compositionally graded HgCdTe P-on-n heterojunction photodiodes
No full textInvestigation of epitaxial P-p CdTe/Hg0.775Cd0.225Te heterojunctions by capacitance-voltage profiling
No full textEstimation of the p-n junction depth in LWIR HgCdTe detectors from the spatial profile of the lateral photocurrent and transverse photovoltage induced by an infrared small spot
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Variation of arsenic diffusion coefficients in HgCdTe alloys with temperature and hg pressure: Tuning of p on n double layer heterojunction diode properties
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