Isothermal growth kinetics of CdxHg₁₋xTe LPE layers

Within the diffusion-limited growth model, the kinetic analysis of the LPE process for CdxHg₁₋xTe solid solutions is carried out. It is assumed that a phase equilibrium exists on the interface, and the concentrations of components are connected by the equations of phase equilibria in the frame of the model of polyassociated solutions. These equations serve as the boundary conditions in solving the diffusion mass transfer problem. The developed thermodynamic model of growth allowed us to achieve the precision description of solid solutions, in particular to predict the regimes of the growth of layers with a given composition in the Cd-Hg-Te system

Polyassociative thermodynamic model of A²B⁶ semiconductor meltand phase equilibria in Cd-Hg-Te system. 4. p-T-x diagram of Cd-Hg-Te system

p −T− x diagram of Cd-Hg-Te system is analyzed in the framework of the polyassociative solution model. The temperature dependence of the dissociation constant for ternary complexes, which describes the mixing effects, was determined using the low temperature data on phase equilibrium in the system. A satisfactory agreement between calculated and experimental data of various works about phase equilibrium was attained

Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system

Within the frames of the model of the polyassociative solutions the comparative analysis was performed of the formation parameters of multi-atom complexes in CdTe and Hg-Te systems. It was shown, that thermodynamical properties of the studied systems can be described in the supposition of the presence in the liquid phase of the ATe, A₂Te₃, ATe₂, A₂Te (A = Cd, Hg) and free Te, Cd, Hg atoms. In accordance with the model of polyassociative solutions the data on p–T–x equilibrium in the region of quasi-binary cross-section of Cd-Hg-Te system structural diagram were obtained. It was shown, that the mixing effects in the three-component liquid phase are satisfactorily described by the formation of CdHgTe and CdHgTe₃ associates. The good correspondence of the calculations and experiment in the high temperature part of the Cd-Hg-Te system structural diagram was achieved

Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System

By comparing the results of calculations concerning the dependence of the parameters of a layer on the growth conditions with and without regard for mechanical strains in the growing system, we have analyzed the influence of the elastic energy of the strained solid phase on the phase formation in the Cd–Hg–Te system. It is shown that the occurrence of elastic strains in a layer results in an insignificant reduction of the growth rate and has almost no influence on the composition of a growing layer. The ideas of coherently matched phases in the presence of elastic deformations in the system, as well as the assumption about the existence of the chemical equilibrium of phases on the interface, give rather close results as for the crystallization of the material. Both approaches describe the experimental data on the growth of layers in various temperature-time regimes quite satisfactoril

Modelling of thin Si layers growth on partially masked Si substrate

This paper presents a numerical simulation of epitaxial lateral overgrowth of silicon layers from the liquid phase of an Sn solvent. A two-dimensional diffusion equation has been solved and the concentration profiles of Si in a Si-Sn rich solution during the growth have been constructed. The epilayer thickness and width have been obtained from the concentration near the interface

Polyassociative thermodynamical model of A₂B₆ semiconductor melt and P-T-X equilibria in Cd-Hg-Te system: 1. Phase equilibria in initial two-component systems. Hg-Te system

In the framework of the theory for associated solutions comprising several complexes of various compositions in a liquid phase, analyzed are phase equilibria in Cd-Hg-Te systems. Checking this theory as to the description of phase equilibria in a system as well as a search of model thermodynamic parameters were performed by the way of sequential computer processing the respective experimental results for initial two-component materials. Hg-Te system was chosen as the first model one. It was ascertained that HgTe, HgTe₂ and Te are dominating complexes in the liquid phase of this system. Determined were the complex-creative parameters in the liquid phase. As to P-T-X equilibria in Hg-Te system, we reached a satisfying accordance between calculation and experimental data