129 research outputs found
Modeling nonlinear waves in graphene
The graphene-based resonator and its application to mass sensing based on nonlinear
waves have been poorly studied numerically [1]. The project's main objective is to model and understand
how graphene behave in free and forced vibrations and calculate the nonlinear resonance frequencies
Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings
Quaternary InAsSbP quantum dots (QDs) and quantum rings (QRs) are grown on InAs (100) substrates by liquid phase epitaxy. High resolution scanning electron and atomic force microscopes are used for the characterization. The room temperature optoelectronic and magnetoelectric properties of the InAsSbP type-II QDs and QRs are investigated. For the QD-based structures, specific dips on the capacitance-voltage characteristic are revealed and measured, which are qualitatively explained by the holes thermal and tunnel emissions from the QDs. Specific fractures at room temperature are experimentally found in the magnetic field dependence of an electric sheet resistance for the InAsSbP QRs-based sample. (C) 2012 American Institute of Physics. (doi:10.1063/1.3676437
Theoretical study of the (3x2) reconstruction of beta-SiC(001)
By means of ab initio molecular dynamics and band structure calculations, as
well as using calculated STM images, we have singled out one structural model
for the (3x2) reconstruction of the Si-terminated (001) surface of cubic SiC,
amongst several proposed in the literature. This is an alternate dimer-row
model, with an excess Si coverage of 1/3, yielding STM images in good accord
with recent measurements [F.Semond et al. Phys. Rev. Lett. 77, 2013 (1996)].Comment: To be published in PRB Rapid. Com
Modeling the series of (n x 2) Si-rich reconstructions of beta-SiC(001): a prospective atomic wire?
We perform ab initio plane wave supercell density functional calculations on
three candidate models of the (3 x 2) reconstruction of the beta-SiC(001)
surface. We find that the two-adlayer asymmetric-dimer model (TAADM) is
unambiguously favored for all reasonable values of Si chemical potential. We
then use structures derived from the TAADM parent to model the silicon lines
that are observed when the (3 x 2) reconstruction is annealed (the (n x 2)
series of reconstructions), using a tight-binding method. We find that as we
increase n, and so separate the lines, a structural transition occurs in which
the top addimer of the line flattens. We also find that associated with the
separation of the lines is a large decrease in the HOMO-LUMO gap, and that the
HOMO state becomes quasi-one-dimensional. These properties are qualititatively
and quantitatively different from the electronic properties of the original (3
x 2) reconstruction.Comment: 22 pages, including 6 EPS figure
Hole Doping Dependence of the Coherence Length in Thin Films
By measuring the field and temperature dependence of magnetization on
systematically doped thin films, the critical current
density and the collective pinning energy are determined in
single vortex creep regime. Together with the published data of superfluid
density, condensation energy and anisotropy, for the first time we derive the
doping dependence of the coherence length or vortex core size in wide doping
regime directly from the low temperature data. It is found that the coherence
length drops in the underdoped region and increases in the overdoped side with
the increase of hole concentration. The result in underdoped region clearly
deviates from what expected by the pre-formed pairing model if one simply
associates the pseudogap with the upper-critical field.Comment: 4 pages, 4 figure
Ferroelectricity in Ultrathin Strained BaTiO\u3csub\u3e3\u3c/sub\u3e Films: Probing the Size Effect by Ultraviolet Raman Spectroscopy
We demonstrate a dramatic effect of film thickness on the ferroelectric phase transition temperature, Tc, in strained BaTiO3 films grown on SrTiO3 substrates. Using variable temperature ultraviolet Raman spectroscopy enables measuring Tc in films as thin as 1.6 nm, and film thickness variation from 1.6 to 10 nm leads to Tc tuning from 70 to about 925K. Raman data are consistent with synchrotron x-ray scattering results, which indicate the presence of of 180◦ domains below Tc, and thermodynamic phase-field model calculations of Tc as a function of thickness
Direct Determination of the Effect of Strain on Domain Morphology in Ferroelectric Superlattices with Scanning Probe Microscopy
A variant of piezo force microscopy was used to characterize the effect of strain on polarization in [(BaTiO3)n/(SrTiO3)m]p superlattices. The measurements were compared to theoretical predictions based on phase-field calculations. When polarization is constrained to be perpendicular to the substrate, the measured polarization and domain morphology agree quantitatively with the predictions. This case allows the presence of an internal electric field in the thin film to be identified. The measured trend in piezoelectric response with strain state was in qualitative agreement with predictions, and the differences were consistent with the presence of internal electrical fields. Clear differences in domain morphology with strain were observed; and in some cases, the lateral anisotropic strain appeared to influence the domain morphology. The differences in magnitude and morphology were attributed to the internal electric fields and anisotropic strains
Structural and transport properties of epitaxial NaxCoO2 thin films
We have studied structural and transport properties of epitaxial NaxCoO2 thin
films on (0001) sapphire substrate prepared by topotaxially converting an
epitaxial Co3O4 film to NaxCoO2 with annealing in Na vapor. The films are c
axis oriented and in-plane aligned with [10 1 0] NaxCoO2 rotated by 30 degrees
from [10 1 0] sapphire. Different Na vapor pressures during the annealing
resulted in films with different Na concentrations, which showed distinct
transport properties
High resolution synchrotron radiation-based x-ray photoemission spectroscopy study of the Si-rich beta-SiC(100) 3X2 surface oxidation
We investigate the initial oxidation and interface formation of cubic silicon carbide for the silicon rich beta-SiC(100) 3x2 surface reconstruction by high resolution synchrotron radiation-based soft x-ray photoemission spectroscopy. The surface is exposed to low doses of molecular oxygen ranging from 1 up to 10 000 L, at surface temperatures from 25 to 500 degreesC. Significant formation of SiO(2) is found for the surface at room temperature, with the rate of oxidation increasing with temperature. Valence band data and Si 2p core level spectra show that even at low exposures, significant oxidation is taking place, with a surface reactivity to oxygen much larger than for silicon surfaces. The oxidation products, which are grown at very low temperatures (less than or equal to500 degreesC) include SiO(2) as a dominant feature but also substoichiometric oxides Si(+1), Si(+2), Si(+3), and significant amounts of mixed oxide products involving C atoms (Si-O-C). (C) 2003 American Vacuum Society
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