Photoluminescence rings in Corbino disk at quantizing magnetic fields

Spatially resolved photoluminescence of modulation doped AlGaAs/GaAs heterojunction was investigated in a sample of Corbino disk geometry subject to strong perpendicular magnetic fields. Significant spatial modulation of the photoluminescence was observed in form of one or more concentric rings which travelled across the sample when the magnetic field strength was varied. A topology of the observed structure excludes the possibility of being a trace of an external current. The effect is attributed to formation of compressible and incompressible stripes in a 2DEG density gradient across the sample.Comment: 5 two-column pages, 4 figures (one of them in color

Metal-insulator transition in a 2D electron gas: Equivalence of two approaches for determining the critical point

The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation energy and vanishing nonlinearity of current-voltage characteristics as extrapolated from the insulating side. We find that in zero magnetic field (but not in the presence of a parallel magnetic field), both methods give equivalent results, adding support to the existence of a true zero-field metal-insulator transition.Comment: As publishe

Spin gap in the 2D electron system of GaAs/AlGaAs single heterojunctions in weak magnetic fields

We study the interaction-enhanced spin gaps in the two-dimensional electron gas confined in GaAs/AlGaAs single heterojunctions subjected to weak magnetic fields. The values are obtained from the chemical potential jumps measured by magnetocapacitance. The gap increase with parallel magnetic field indicates that the lowest-lying charged excitations are accompanied with a single spin flip at the odd-integer filling factor nu=1 and nu=3, in disagreement with the concept of skyrmions.Comment: as publishe

Spin magnetization of strongly correlated electron gas confined in a two-dimensional finite lattice

The influence of disorder and interaction on the ground state polarization of the two-dimensional (2D) correlated electron gas is studied by numerical investigations of unrestricted Hartree-Fock equations. The ferromagnetic ground state is found to be plausible when the electron number is lowered and the interaction and disorder parameters are suitably chosen. For a finite system at constant electronic density the disorder induced spin polarization is cut off when the electron orbitals become strongly localized to the individual network sites. The fluctuations of the interaction matrix elements are calculated and brought out as favoring the ferromagnetic instability in the extended and weak localization regime. The localization effect of the Hubbard interaction term is discussed.Comment: 7 pages, 9 figure

Quantum Hall effect at low magnetic fields

The temperature and scale dependence of resistivities in the standard scaling theory of the integer quantum Hall effect is discussed. It is shown that recent experiments, claiming to observe a discrepancy with the global phase diagram of the quantum Hall effect, are in fact in agreement with the standard theory. The apparent low-field transition observed in the experiments is identified as a crossover due to weak localization and a strong reduction of the conductivity when Landau quantization becomes dominant.Comment: 4 pages, 2 figures, minor corrections, to appear in PR

Indication of the ferromagnetic instability in a dilute two-dimensional electron system

The magnetic field B_c, in which the electrons become fully spin-polarized, is found to be proportional to the deviation of the electron density from the zero-field metal-insulator transition in a two-dimensional electron system in silicon. The tendency of B_c to vanish at a finite electron density suggests a ferromagnetic instability in this strongly correlated electron system.Comment: 4 pages, postscript figures included. Revised versio

Composite fermions close to the one-half filling of the lowest Landau level revisited

By strictly adhering to the microscopic theory of composite fermions for the Landau-level filling fractions nu_e = p/(2 p + 1), we reproduce, with remarkable accuracy, the surface-acoustic-wave (SAW)-based experimental results by Willett and co-workers concerning two-dimensional electron systems with nu_e close to 1/2. Our results imply that the electron band mass m_b, as distinct from the composite fermion mass m_*, must undergo a substantial increase under the conditions corresponding to nu_e approximately equal to 1/2. In view of the relatively low aerial electronic densities n_e to which the underlying SAW experiments correspond, our finding conforms with the experimental results by Shashkin et al. [Phys. Rev. B 66, 073303 (2002)], concerning two-dimensional electrons in silicon, that signal sharp increase in m_b for n_e decreasing below approximately 2 x 10^{11} cm^{-2}. We further establish that a finite mean-free path l_0 is essential for the observed linearity of the longitudinal conductivity sigma_{xx}(q) as deduced from the SAW velocity shifts.Comment: 5 pages, 2 postscript figure

Analysis of negative magnetoresistance. Statistics of closed paths. II. Experiment

It is shown that a new kind of information can be extracted from the Fourier transform of negative magnetoresistance in 2D semiconductor structures. The procedure proposed provides the information on the area distribution function of closed paths and on the area dependence of the average length of closed paths. Based on this line of attack the method of analysis of the negative magnetoresistance is suggested. The method has been used to process the experimental data on negative magnetoresistance in 2D structures with different relations between the momentum and phase relaxation times. It is demonstrated this fact leads to distinction in the area dependence of the average length of closed paths.Comment: 5 pages, 5 figures, to be published in Phys.Rev.