185 research outputs found
Re-entrant Layer-by-Layer Etching of GaAs(001)
We report the first observation of re-entrant layer-by-layer etching based on
{\it in situ\/} reflection high-energy electron-diffraction measurements. With
AsBr used to etch GaAs(001), sustained specular-beam intensity oscillations
are seen at high substrate temperatures, a decaying intensity with no
oscillations at intermediate temperatures, but oscillations reappearing at
still lower temperatures. Simulations of an atomistic model for the etching
kinetics reproduce the temperature ranges of these three regimes and support an
interpretation of the origin of this phenomenon as the site-selectivity of the
etching process combined with activation barriers to interlayer adatom
migration.Comment: 11 pages, REVTeX 3.0. Physical Review Letters, in press
Investigation of Single Boron Acceptors at the Cleaved Si:B (111) Surface
The cleaved and (2 x 1) reconstructed (111) surface of p-type Si is
investigated by scanning tunneling microscopy (STM). Single B acceptors are
identified due to their characteristic voltage-dependent contrast which is
explained by a local energetic shift of the electronic density of states caused
by the Coulomb potential of the negatively charged acceptor. In addition,
detailed analysis of the STM images shows that apparently one orbital is
missing at the B site at sample voltages of 0.4 - 0.6 V, corresponding to the
absence of a localized dangling-bond state. Scanning tunneling spectroscopy
confirms a strongly altered density of states at the B atom due to the
different electronic structure of B compared to Si.Comment: 6 pages, 7 figure
Local and Global Well-Posedness for Aggregation Equations and Patlak-Keller-Segel Models with Degenerate Diffusion
Recently, there has been a wide interest in the study of aggregation
equations and Patlak-Keller-Segel (PKS) models for chemotaxis with degenerate
diffusion. The focus of this paper is the unification and generalization of the
well-posedness theory of these models. We prove local well-posedness on bounded
domains for dimensions and in all of space for , the
uniqueness being a result previously not known for PKS with degenerate
diffusion. We generalize the notion of criticality for PKS and show that
subcritical problems are globally well-posed. For a fairly general class of
problems, we prove the existence of a critical mass which sharply divides the
possibility of finite time blow up and global existence. Moreover, we compute
the critical mass for fully general problems and show that solutions with
smaller mass exists globally. For a class of supercritical problems we prove
finite time blow up is possible for initial data of arbitrary mass.Comment: 31 page
Longtime behavior of nonlocal Cahn-Hilliard equations
Here we consider the nonlocal Cahn-Hilliard equation with constant mobility
in a bounded domain. We prove that the associated dynamical system has an
exponential attractor, provided that the potential is regular. In order to do
that a crucial step is showing the eventual boundedness of the order parameter
uniformly with respect to the initial datum. This is obtained through an
Alikakos-Moser type argument. We establish a similar result for the viscous
nonlocal Cahn-Hilliard equation with singular (e.g., logarithmic) potential. In
this case the validity of the so-called separation property is crucial. We also
discuss the convergence of a solution to a single stationary state. The
separation property in the nonviscous case is known to hold when the mobility
degenerates at the pure phases in a proper way and the potential is of
logarithmic type. Thus, the existence of an exponential attractor can be proven
in this case as well
Ab initio study of step formation and self-diffusion on Ag(100)
Using the plane wave pseudopotential method we performed density functional
theory calculations on the stability of steps and self-diffusion processes on
Ag(100). Our calculated step formation energies show that the {111}-faceted
step is more stable than the {110}-faceted step. In accordance with
experimental observations we find that the equilibrium island shape should be
octagonal very close to a square with predominately {111}-faceted steps. For
the (100) surface of fcc metals atomic migration proceeds by a hopping or an
exchange process. For Ag(100) we find that adatoms diffuse across flat surfaces
preferentially by hopping. Adatoms approaching the close-packed {111}-faceted
step edges descend from the upper terrace to the lower level by an atomic
exchange with an energy barrier almost identical to the diffusion barrier on
flat surface regions. Thus, within our numerical accuracy (approx +- 0.05 eV)
there is no additional step-edge barrier to descent. This provides a natural
explanation for the experimental observations of the smooth two-dimensional
growth in homoepitaxy of Ag(100). Inspection of experimental results of other
fcc crystal surfaces indicates that our result holds quite generally.Comment: 10 pages, 9 figures. Submitted to Phys. Rev B (October 31, 1996
Application of Mxcd to Magnetic Thin-Film Sensors
While Magnetic X-ray Circular Dichroism (MXCD) has been applied extensively to the extraction of elemental magnetic moments in various magnetic multilayers, the configuration of actual devices imposes certain constraints on the application of MXCD to devices. Using a set of real, thin-film spin valve devices with varying Cu spacer layer thicknesses, we demonstrate the correlation between MXCD and R-H measurements on those devices as well as the restrictions on the interpretation of MXCD data imposed by both the device topology and the formulation of realistic error estimates
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