A Model of Tradeable Capital Tax Permits

Standard models of horizontal strategic capital tax competition predict that, in a Nash equilibrium, tax rates are inefficiently low due to externalities - capital infl ow to one state corresponds to capital out ow for another state. Researchers often suggest that the federal government impose Pigouvian taxes to correct for these effects and achieve efficiency. We propose an alternative incentive-based regulation: tradeable capital tax permits. Under this system, the federal government would require a state to hold a permit if it wanted to reduce its capital income tax rate from some pre-determined benchmark. These permits would be tradeable across states. We show that, if the federal government sets the correct number of total permits, then social efficiency is achieved. We discuss the advantages of this system relative to the canonical suggestion of Pigouvian taxes

Enhancement of Electrical Conduction and Phonon Scattering in Ga2O3(ZnO)9-In2O3(ZnO)9 Compounds by Modification of Interfaces at the Nanoscale

The Ga2O3(ZnO)9 and In2O3(ZnO)9 homologous phases have attracted attention as thermoelectric (TE) oxides due to their layered structures. Ga2O3(ZnO)9 exhibits low thermal conductivity, while In2O3(ZnO)9 possesses higher electrical conductivity. The TE properties of the solid solution of Ga2O3(ZnO)9-In2O3(ZnO)9 were explored and correlated with changes in the crystal structure. High-quality (1−x)Ga2O3(ZnO)9-(ZnO)9 (x = 0.0 to 1.0) ceramics were prepared by the solid-state route using B2O3 and Nd2O3 as additives. The crystal structures were analysed by x-ray diffraction, high-resolution transmission electron microscopy and atomic resolution scanning transmission electron microscopy–high-angle annular dark field imaging–energy dispersive x-ray spectroscopy (STEM–HAADF–EDS) techniques. A layered superstructure with compositional modulations was observed in all samples in the (1−x)Ga2O3(ZnO)9-xIn2O3(ZnO)9 system. All the ceramics exhibited nanoscale structural features identified as Ga- and In-rich inversion boundaries (IBs). Substitution of 20 mol.% In (x = 0.2) in the Ga2O3(ZnO)9 compounds generated basal and pyramidal indium IBs typically found in the In2O3(ZnO)m system. The (Ga0.8In0.2)2O3(ZnO)9 compound does not exhibit the structural features of the Cmcm Ga2O3(ZnO)9 compound, which is formed by a stacking of Ga-rich IBs along the pyramidal plane of the wurtzite ZnO, but features that resemble the crystal structure exhibited by the R3¯¯¯m In2O3(ZnO)m with basal and pyramidal indium IBs. The structural changes led to improved TE performance. For example, (Ga0.8In0.2)2O3(ZnO)9 showed a low thermal conductivity of 2 W/m K and a high power factor of 150 μW/m K2 giving a figure of merit (ZT) of 0.07 at 900 K. This is the highest ZT for Ga2O3(ZnO)9-based homologous compounds and is comparable with the highest ZT reported for In2O3(ZnO)9 homologous compounds

Microstructure of (Hf-Ta-Zr-Nb)C high-entropy carbide at micro and nano/atomic level

Support from the projects APVV-15-0469, APVV-15-0621, VEGA 2/0163/16, and VEGA 2/0082/17 is acknowledged. MJR and EGC acknowledge the support of EPSRC grant XMAT (EP/K008749/2)

ππ\pi\pi scattering S wave from the data on the reaction π−p→π0π0n\pi^-p\to\pi^0\pi^0n

The results of the recent experiments on the reaction $\pi^-p\to\pi^0\pi^0n$ performed at KEK, BNL, IHEP, and CERN are analyzed in detail. For the I=0 $\pi\pi$ S wave phase shift $\delta^0_0$ and inelasticity $\eta^0_0$ a new set of data is obtained. Difficulties emerging when using the physical solutions for the $\pi^0\pi^0$ S and D wave amplitudes extracted with the partial wave analyses are discussed. Attention is drawn to the fact that, for the $\pi^0\pi^0$ invariant mass, m, above 1 GeV, the other solutions, in principle, are found to be more preferred. For clarifying the situation and further studying the $f_0(980)$ resonance thorough experimental investigations of the reaction $\pi^-p\to\pi^0\pi^0n$ in the m region near the $K\bar K$ threshold are required.Comment: 17 pages, 5 figure

Utilising unit-cell twinning operators to reduce lattice thermal conductivity in modular structures: Structure and thermoelectric properties of Ga₂O₃(ZnO)₉

The Ga2O3(ZnO)m family of homologous compounds have been identified as potential thermoelectric materials, but properties are often limited due to low densification. By use of B2O3 as an effective liquid phase sintering aid, high density, high quality ceramic samples of Ga2O3(ZnO)9 have been synthesised. The atomic structure and local chemical composition of Ga2O3(ZnO)9 have been determined by means of high resolution X-ray diffraction and atomic resolution STEM-HAADF, EDS and EELS measurements. X-ray analysis showed that the compound crystalizes in the Cmcm orthorhombic symmetry. Atomically resolved HAADF-STEM images unambiguously showed the presence of nano-sized, wedge-shaped twin boundaries, parallel to the b-axis. These nano-scale structural features were chemically investigated, for the first time, revealing the exact distributions of Zn and Ga; it was found that Ga ions occupy sites at the junction of twin boundaries and inversion boundaries. HAADF-EDS analysis showed that the calcination step has a significant impact on crystal structure homogeneity. By use of a sintering aid and optimization of processing parameters the ceramics achieved a low thermal conductivity of 1.5–2.2 W/m.K (for the temperature range 300–900 K), a power factor of 40–90 μW/K.m2, leading to a ZT of 0.06 at 900 K. The work shows a route to exploit nanoscale interface features to reduce the thermal conductivity and thereby enhance the thermoelectric figure of merit in complex thermoelectric materials

Mass and width of sigma(750) scalar meson from measurements of piN->pi(-)pi(+)N on polarized targets

The measurements of reactions $\pi^- p_\uparrow \to \pi^- \pi^+ n$ at 17.2 GeV/c and $\pi^+ n_\uparrow \to \pi^+ \pi^- p$ at 5.98 and 11.85 GeV/c made at CERN with polarized targets provide a model-independent and solution-independent evidence for a narrow scalar state sigma(750). The original chi^2 minimization method and the recent Monte Carlo method for amplitude analysis of data at 17.2 GeV/c are in excellent agreement. Both methods find that the mass distribution of the measured amplitude $|\overline S |^2\Sigma$ with recoil transversity ``up'' resonates near 750 MeV while the amplitude $|S|^2\Sigma$ with recoil transversity ``down'' is large and nonresonating. The amplitude $|S|^2\Sigma$ contributes as a strong background to S-wave intensity I_S = (|S|^2 + |\overline S |^2)\Sigma$and distorts the determinations of$\sigma$resonance parameters from$I_S$. To avoid this problem we perform a series of Breit-Wigner fits directly to the measured distribution$|\overline S |^2\Sigma$. The inclusion of various backgrounds causes the width of sigma(750) to become very narrow. Our best fit with$t$-averaged coherent background yields$m_\sigma = 753 \pm 19$MeV and$\Gamma_\sigma = 108 \pm 53$MeV. These values are in excellent agreement with Ellis-Lanik theorem for the width of scalar gluonium. The gluonium interpretation of$\sigma(750)$is also supported by the absence of$\sigma(750)$in reactions$\gamma\gamma \to \pi\pi$. We also show how data on polarized target invalidate essential assumptions of past determinations of$\pi\pi$ phase shifts .Comment: 77 page