Thermal Creation of Electron Spin Polarization in n-Type Silicon

Conversion of heat into a spin-current in electron doped silicon can offer a promising path for spin-caloritronics. Here we create an electron spin polarization in the conduction band of n-type silicon by producing a temperature gradient across a ferromagnetic tunnel contact. The substrate heating experiments induce a large spin signal of 95 $\mu$V, corresponding to 0.54 meV spin-splitting in the conduction band of n-type silicon by Seebeck spin tunneling mechanism. The thermal origin of the spin injection has been confirmed by the quadratic scaling of the spin signal with the Joule heating current and linear dependence with the heating power

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type and 10% in p-type degenerate Si bands, using a narrow Schottky and a SiO2 tunnel barrier in a direct tunneling regime. Furthermore, by increasing the width of the Schottky barrier in non-degenerate p-type Si, we observed a systematic sign reversal of the Hanle signal in the low bias regime. This dramatic change in the spin injection and detection processes with increased Schottky barrier resistance may be due to a decoupling of the spins in the interface states from the bulk band of Si, yielding a transition from a direct to a localized state assisted tunneling. Our study provides a deeper insight into the spin transport phenomenon, which should be considered for electrical spin injection into any semiconductor

How Do Glassy Domains Grow?

We construct the equations for the growth kinetics of a structural glass within mode-coupling theory, through a non-stationary variant of the 3-density correlator defined in Phys. Rev. Lett. 97}, 195701 (2006). We solve a schematic form of the resulting equations to obtain the coarsening of the 3-point correlator $\chi_3(t,t_w)$ as a function of waiting time $t_w$. For a quench into the glass, we find that $\chi_3$ attains a peak value $\sim t_w^{0.5}$ at $t -t_w \sim t_w^{0.8}$, providing a theoretical basis for the numerical observations of Parisi [J. Phys. Chem. B 103, 4128 (1999)] and Kob and Barrat [Phys. Rev. Lett. 78, 4581 (1997)]. The aging is not "simple": the $t_w$ dependence cannot be attributed to an evolving effective temperature.Comment: 6 pages, 5 figure

Two-Dimensional Spintronic Circuit Architectures on Large Scale Graphene

Solid-state electronics based on utilizing the electron spin degree of freedom for storing and processing information can pave the way for next-generation spin-based computing. However, the realization of spin communication between multiple devices in complex spin circuit geometries, essential for practical applications, is still lacking. Here, we demonstrate the spin current propagation in two-dimensional (2D) circuit architectures consisting of multiple devices and configurations using a large area CVD graphene on SiO2/Si substrate at room temperature. Taking advantage of the significant spin transport distance reaching 34 {\mu}m in commercially available wafer-scale graphene grown on Cu foil, we demonstrate that the spin current can be effectively communicated between the magnetic memory elements in graphene channels within 2D circuits of Y-junction and Hexa-arm architectures. We further show that by designing graphene channels and ferromagnetic elements at different geometrical angles, the symmetric and antisymmetric components of the Hanle spin precession signal can be remarkably controlled. These findings lay the foundation for the design of complex 2D spintronic circuits, which can be integrated into efficient electronics based on the transport of pure spin currents

"In-gel" purified ditags direct synthesis of highly efficient SAGE Libraries

BACKGROUND: SAGE (serial analysis of gene expression) is a recently developed technique for systematic analysis of eukaryotic transcriptomes. The most critical step in the SAGE method is large scale amplification of ditags which are then are concatemerized for the construction of representative SAGE libraries. Here, we report a protocol for purifying these ditags via an 'in situ' PAGE purification method. This generates ditags free of linker contaminations, making library construction simpler and more efficient. RESULTS: Ditags used to generate SAGE libraries were demarcated 'in situ' on preparative polyacrylamide gels using XC and BPB dyes, which precisely straddle the ditag band when a 16% PAGE gel (19:1 acrylamide:bis, 5% cross linker) is used to resolve the DNA bands. Here, the ditag DNA was directly excised from gel without visualization via EtBr or fluorescent dye staining, resulting in highly purified ditag DNA free of contaminating linkers. These ditags could be rapidly self ligated even at 4°C to generate concatemers in a controlled manner, which in turn enabled us to generate highly efficient SAGE libraries. This reduced the labor and time necessary, as well as the cost. CONCLUSIONS: This approach greatly simplified the ditag purification procedure for constructing SAGE libraries. Since the traditional post-run staining with EtBr or fluorescent dyes routinely results in cross contamination of a DNA band of interest by other DNA in the gel, the dry gel DNA excision method described here may also be amenable to other molecular biology techniques in which DNA purity is critically important

Dynamics in a Respiratory Control Model With Two Delays

In this paper we study ventilation patterns in a set of parameter dependent nonlinear delay equations with two transport delays modeling the human respiratory control system with peripheral and central control loops. We present a convergent numerical scheme suitable to perform simulations when all disturbances and system parameters are known, then we consider the numerical identifiability of various system parameters based on ventilation data. We are especially interested in the identification of the transport delays in the control loops because these parameters are not measurable directly, but they have a strong influence on system stability/instability

Fixed drug eruption due to paracetamol

Fixed drug eruption is a common type of drug eruption seen in dermatology OPD’s. Usually it is seen with sulphonamides, salicylates, tetracyclines, oxyphenbutazones, dapsone, barbiturates, phenolphthalein, morphine, codeine, quinine, phenacetin, erythromycin, griseofulvin, mebendazole etc. We hereby report a case of fixed drug eruption due to single dose of oral paracetamol in an otherwise healthy male after one hour of consuming it. A provisional diagnosis of Paracetamol induced fixed drug eruption was made. Paracetamol was stopped and patient advised never to take Paracetamol in future. Patient was managed with prednisolone 10mg /day, cetirizine 10 mg/day, and amoxicillin 500 mg twice a day and mometasone + fusidic acid cream to be applied over the lesions

Disorder is not always bad for charge-to-spin conversion in WTe2

The Wang group at Stanford University demonstrates disordered WTex films for efficient charge-to-spin conversion phenomena. The deposition of these films by sputtering and the charge-to-spin conversion resilience against disorder make them attractive for applications in new magnetic memory devices

Gate-tunable Hall sensors on large area CVD graphene protected by h-BN with 1D edge contacts

Graphene is an excellent material for Hall sensors due to its atomically thin structure, high carrier mobility and low carrier density. However, graphene devices need to be protected from the environment for reliable and durable performance in different environmental conditions. Here we present magnetic Hall sensors fabricated on large area commercially available CVD graphene protected by exfoliated hexagonal boron nitride (h-BN). To connect the graphene active regions of Hall samples to the outputs the 1D edge contacts were utilized which show reliable and stable electrical properties. The operation of the Hall sensors shows the current-related sensitivity up to 345 V/(AT). By changing the carrier concentration and type in graphene by the application of gate voltage we are able to tune the Hall sensitivity