Thermal characterization of electrically injected thin-film InGaAsP microdisk lasers on Si

Abstract—We have performed a numerical and experimental analysis of the thermal behavior of electrically injected microdisk lasers that are defined in an InGaAsP-based thin film bonded on top of a silicon wafer. Both the turn-on as well as the pulsed-regime temperature evolution in the lasing region was simulated using the finite-element method. The simulation results are in good agreement with experimental data, which was extracted from the broadening of the time-averaged emission spectra. Lasing at room temperature was only possible in pulsed regime due to the high thermal resistance (10 K/mW). Some strategies to decrease the thermal resistance of the microdisk lasers are proposed and discussed. Index Terms—Heterogeneous integration, InGaAsP, integrated optics, microdisk laser, Si, thermal characterization

Compact, low power and low threshold electrically pumped micro disc lasers for 20Gb/s non return to zero all optical wavelength conversion

\u3cp\u3eUsing a 7.5μm wide InP Micro-Disc-Laser, with a very low ∼100μA threshold current, heterogeneously integrated on top of Silicon on Insulator substrate, all optical NRZ wavelength conversion at speeds up to 20Gb/s is demonstrated.\u3c/p\u3

Extremely uniform lasing wavelengths of InP microdisk lasers heterogeneously integrated on SOI

A standard deviation in lasing wavelength lower than 500pm is characterized on nominally identical and optically-pumped microdisk lasers, heterogeneously integrated on the same SOI circuit. This lasing wavelength uniformity is obtained using electron-beam lithography

Proof-of-concept demonstration of an all-optical de-multiplexer using III-V/SOI microdisk resonator fabricated in a CMOS pilot line

We present a proof-of-concept demonstration of all-optical de-multiplexing of a non-return-to zero 10Gbps data controlled by 2.5GHz clock in an ultra-small III-V-on-silicon microdisk fabricated in a CMOS pilot line

High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach

International audienceThin and thick fully relaxed In 0.65 Ga 0.35 As layers have been grown on InP substrates 0.81% misfit, with high structural and high optoelectronic quality at an operating wavelength of 2.0 m. Full relaxation is achieved, using the paramorphic approach, by growing the In 0.65 Ga 0.35 As layers lattice matched to an InAs 0.25 P 0.75 seed membrane of predetermined lattice parameter. The InAs 0.25 P 0.75 layer was originally grown pseudomorphically strained on the InP substrate before being separated and elastically relaxed using surface micromachining