Analysis of direct CP violation in B−→D0Ds−,D0D−B^- \to D^0 D_s^-, D^0 D^- decays

We investigate the possibility of observing the direct CP violation in the decay modes $B^- \to D^0 D_s^-$ and $D^0 D^-$ within the Standard Model. Including the contributions arising from the tree, annihilation, QCD as well as electroweak penguins with both time- and space-like components, we find that the direct CP asymmetry in $B^- \to D^0 D_s^-$ is very small $\sim 0.2$ % but in $B^- \to D^0 D^-$ decay it can be as large as 4%. Approximately $10^7$ charged $B$ mesons are required to experimentally observe the CP asymmetry parameter for the later case. Since this is easily accessible with the currently running B factories, the decay mode $B^- \to D^0 D^-$ may be pursued to look for CP violation.Comment: Latex, 14 page

Corrosion resistant coating

A method of coating a substrate with an amorphous metal is described. A solid piece of the metal is bombarded with ions of an inert gas in the presence of a magnetic field to provide a vapor of the metal which is deposited on the substrate at a sufficiently low gas pressure so that there is formed on the substrate a thin, uniformly thick, essentially pinhole-free film of the metal

Method of producing high T(subc) superconducting NBN films

Thin films of niobium nitride with high superconducting temperature (T sub c) of 15.7 K are deposited on substrates held at room temperature (approx 90 C) by heat sink throughout the sputtering process. Films deposited at P sub Ar 12.9 + or - 0.2 mTorr exhibit higher T sub c with increasing P sub N2,I with the highest T sub c achieved at P sub n2,I= 3.7 + or - 0.2 mTorr and total sputtering pressure P sub tot = 16.6 + or - 0.4. Further increase of N2 injection starts decreasing T sub c

The Deuteron Spin Structure Functions in the Bethe-Salpeter Approach and the Extraction of the Neutron Structure Function g1n(x)g_1^n(x)

The nuclear effects in the spin-dependent structure functions $g_1^D$ and $b_2^D$ are calculated in the relativistic approach based on the Bethe-Salpeter equation with a realistic meson-exchange potential. The results of calculations are compared with the non-relativistic calculations. The problem of extraction of the neutron spin structure function, $g_1^n$, from the deuteron data is discussed.Comment: (Talk given at the SPIN'94 International Symposium, September 15-22, 1994, Bloomington, Indiana), 6 pages, 5 figures, Preprint Alberta Thy 29-9

Thin-film chemical sensors based on electron tunneling

The physical mechanisms underlying a novel chemical sensor based on electron tunneling in metal-insulator-metal (MIM) tunnel junctions were studied. Chemical sensors based on electron tunneling were shown to be sensitive to a variety of substances that include iodine, mercury, bismuth, ethylenedibromide, and ethylenedichloride. A sensitivity of 13 parts per billion of iodine dissolved in hexane was demonstrated. The physical mechanisms involved in the chemical sensitivity of these devices were determined to be the chemical alteration of the surface electronic structure of the top metal electrode in the MIM structure. In addition, electroreflectance spectroscopy (ERS) was studied as a complementary surface-sensitive technique. ERS was shown to be sensitive to both iodine and mercury. Electrolyte electroreflectance and solid-state MIM electroreflectance revealed qualitatively the same chemical response. A modified thin-film structure was also studied in which a chemically active layer was introduced at the top Metal-Insulator interface of the MIM devices. Cobalt phthalocyanine was used for the chemically active layer in this study. Devices modified in this way were shown to be sensitive to iodine and nitrogen dioxide. The chemical sensitivity of the modified structure was due to conductance changes in the active layer

Insulator interface effects in sputter‐deposited NbN/MgO/NbN (superconductor–insulator–superconductor) tunnel junctions

All refractory, NbN/MgO/NbN (superconductor–insulator–superconductor) tunnel junctions have been fabricated by in situ sputter deposition. The influence of MgO thickness (0.8–6.0 nm) deposited under different sputtering ambients at various deposition rates on current–voltage (I–V) characteristics of small‐area (30×30 μm) tunnel junctions is studied. The NbN/MgO/NbN trilayer is deposited in situ by dc reactive magnetron (NbN), and rf magnetron (MgO) sputtering, followed by thermal evaporation of a protective Au cap. Subsequent photolithography, reactive ion etching, planarization, and top contact (Pb/Ag) deposition completes the junction structure. Normal resistance of the junctions with MgO deposited in Ar or Ar and N2 mixture shows good exponential dependence on the MgO thickness indicating formation of a pin‐hole‐free uniform barrier layer. Further, a postdeposition in situ oxygen plasma treatment of the MgO layer increases the junction resistance sharply, and reduces the subgap leakage. A possible enrichment of the MgO layer stoichiometry by the oxygen plasma treatment is suggested. A sumgap as high as 5.7 mV is observed for such a junctio