Chemical vapour deposition synthetic diamond: materials, technology and applications

Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synthesized in planar form, however non-planar geometries are also possible and enable a number of key applications. This article reviews the material properties and characteristics of single crystal and polycrystalline CVD diamond, and how these can be utilized, focusing particularly on optics, electronics and electrochemistry. It also summarizes how CVD diamond can be tailored for specific applications, based on the ability to synthesize a consistent and engineered high performance product.Comment: 51 pages, 16 figure

Entwicklung halbleitender Diamantschichten

Der Einsatz von Diamantschichten für elektronische Bauelemente, wie z. B. Transistoren, Sensoren, Mikroaktoren, UV- oder Teilchendetektoren, erfordert die Herstellung hochwertiger Diamantschichten mit geringer Oberflächenrauheit, niedriger Defektdichte und geringer Hintergrunddotierung. Diese Anforderungen werden von hochorientierten Diamantschichten erfüllt. Wettbewerbsfähige Kosten bei der Herstellung diamantbasierender Bauelemente können nur bei Beherrschung der in der Mikroelektronik üblichen Beschichtungsflächen, Schichtddicken und Bearbeitungsverfahren erreicht werden. In diesem Beitrag wird ein Überblick über strukturelle und funktionelle Eigenschaften hochorientierter (heteroepitaktischer) Diamantschichten und den Stand der Anwendungsmöglichkeiten in mikroelektronischen Bauelementen gegeben

Tuning the electron affinity and secondary electron emission of diamond (100) surfaces by diels-alder reaction

10.1021/la701285hLangmuir23199722-9727LANG

Tailoring the electron affinity and electron emission of diamond (100) 2 × 1 by surface functionalization using an organic semiconductor

10.1021/cm801752jChemistry of Materials20216871-6879CMAT

High-Temperature Electronic Materials: Silicon Carbide and Diamond

The physical and chemical properties of wide-band-gap semiconductors make these materials an ideal wide bandgapsemiconductor choice for device fabrication for applications in many different areas, e.g. light emitters, high-temperature and high-power electronics, high-power microwave devices, micro-electromechanical system (MEM) technology, and substrates for semiconductor preparation. These semiconductors have micro-electromechanical system (MEMS) been recognized for several decades as being suitable for these applications, but until recently the low material quality has not allowed the fabrication of high-quality devices. In this material quality chapter, we review the wide-band-gap semiconductors, silicon carbide and diamond. Silicon carbide electronics is advancing from the research stage to commercial production. The commercial availability of single-crystal SiC substrates during the early 1990s gave rise to intense activity in the development of silicon carbide devices. The commercialization started with the release of blue light-emitting diode (LED). The recent release of high-power Schottky diodes was a further demonstration of the progress made towards defect-free SiC substrates. Diamond has superior physical and chemical properties. Silicon-carbide- and diamond-based diamondsilicon carbide (SiC) electronics are at different stages of development. The preparation of high-quality single-crystal substrates of wafer size has allowed recent significant progress in the fabrication of several types of devices, and the development has reached many important milestones. However, high-temperature studies are still scarce, and diamond-based electronics is still in its infancy