Effect of the Pauli principle on photoelectron spin transport in p+p^+ GaAs

In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a function of distance from a tightly-focussed light excitation spot. Under degeneracy of the electron gas (high concentration, low temperature), a dip at the center of the polarization profile appears with a polarization maximum at a distance of about $2 \; \mu m$ from the center. This counterintuitive result reveals that photoelectron diffusion depends on spin, as a direct consequence of the Pauli principle. This causes a concentration dependence of the spin stiffness while the spin dependence of the mobility is found to be weak in doped material. The various effects which can modify spin transport in a degenerate electron gas under local laser excitation are considered. A comparison of the data with a numerical solution of the coupled diffusion equations reveals that ambipolar coupling with holes increases the steady-state photo-electron density at the excitation spot and therefore the amplitude of the degeneracy-induced polarization dip. Thermoelectric currrents are predicted to depend on spin under degeneracy (spin Soret currents), but these currents are negligible except at very high excitation power where they play a relatively small role. Coulomb spin drag and bandgap renormalization are negligible due to electrostatic screening by the hole gas

Spin and recombination dynamics of excitons and free electrons in p-type GaAs : effect of carrier density

Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly neutral and photoelectrons can either recombine with holes bound to acceptors (e-A0 line) or form excitons which are mostly trapped on neutral acceptors forming the (A0X) complex. It is found that the spin lifetime is shorter for electrons that recombine through the e-A0 transition due to spin relaxation generated by the exchange scattering of free electrons with either trapped or free holes, whereas spin flip processes are less likely to occur once the electron forms with a free hole an exciton bound to a neutral acceptor. An increase of exci- tation power induces a cross-over to a regime where the bimolecular band-to-band (b-b) emission becomes more favorable due to screening of the electron-hole Coulomb interaction and ionization of excitonic complexes and free excitons. Then, the formation of excitons is no longer possible, the carrier recombination lifetime increases and the spin lifetime is found to decrease dramatically with concentration due to fast spin relaxation with free photoholes. In this high density regime, both the electrons that recombine through the e-A0 transition and through the b-b transition have the same spin relaxation time.Comment: 4 pages, 5 figure

Spin dependent photoelectron tunnelling from GaAs into magnetic Cobalt

The spin dependence of the photoelectron tunnel current from free standing GaAs films into out-of- plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, reaches +/- 6% around zero applied tunnel bias and drops to +/- 2% at a bias of -1.6 V applied to the GaAs. This decrease is a result of the drop in the photoelectron spin polarization that results from a reduction in the GaAs surface recombination velocity. The sign of A changes with that of the Cobalt magnetization direction. In contrast, on a (nonmagnetic) Gold film A ~ 0%

Absence of an intrinsic value for the surface recombination velocity in doped semiconductors

A self-consistent expression for the surface recombination velocity $S$ and the surface Fermi level unpinning energy as a function of light excitation power ($P$) is presented for n- and p-type semiconductors doped above the 10$^{16}$ cm$^{-3}$ range. Measurements of $S$ on p-type GaAs films using a novel polarized microluminescence technique are used to illustrate two limiting cases of the model. For a naturally oxidized surface $S$ is described by a power law in $P$ whereas for a passivated surface $S^{-1}$ varies logarithmically with $P$. Furthermore, the variation in $S$ with surface state density and bulk doping level is found to be the result of Fermi level unpinning rather than a change in the intrinsic surface recombination velocity. It is concluded that $S$ depends on $P$ throughout the experimentally accessible range of excitation powers and therefore that no instrinsic value can be determined. Previously reported values of $S$ on a range of semiconducting materials are thus only valid for a specific excitation power.Comment: 10 pages, 7 figure

Kernel functions and B\"acklund transformations for relativistic Calogero-Moser and Toda systems

We obtain kernel functions associated with the quantum relativistic Toda systems, both for the periodic version and for the nonperiodic version with its dual. This involves taking limits of previously known results concerning kernel functions for the elliptic and hyperbolic relativistic Calogero-Moser systems. We show that the special kernel functions at issue admit a limit that yields generating functions of B\"acklund transformations for the classical relativistic Calogero-Moser and Toda systems. We also obtain the nonrelativistic counterparts of our results, which tie in with previous results in the literature.Comment: 76 page

Elasticity of semiflexible polymers in two dimensions

We study theoretically the entropic elasticity of a semi-flexible polymer, such as DNA, confined to two dimensions. Using the worm-like-chain model we obtain an exact analytical expression for the partition function of the polymer pulled at one end with a constant force. The force-extension relation for the polymer is computed in the long chain limit in terms of Mathieu characteristic functions. We also present applications to the interaction between a semi-flexible polymer and a nematic field, and derive the nematic order parameter and average extension of the polymer in a strong field.Comment: 16 pages, 3 figure

Classical and quantum three-dimensional integrable systems with axial symmetry

We study the most general form of a three dimensional classical integrable system with axial symmetry and invariant under the axis reflection. We assume that the three constants of motion are the Hamiltonian, $H$, with the standard form of a kinetic part plus a potential dependent on the position only, the $z$-component of the angular momentum, $L$, and a Hamiltonian-like constant, $\widetilde H$, for which the kinetic part is quadratic in the momenta. We find the explicit form of these potentials compatible with complete integrability. The classical equations of motion, written in terms of two arbitrary potential functions, is separated in oblate spheroidal coordinates. The quantization of such systems leads to a set of two differential equations that can be presented in the form of spheroidal wave equations.Comment: 17 pages, 3 figure

Quasi-doubly periodic solutions to a generalized Lame equation

We consider the algebraic form of a generalized Lame equation with five free parameters. By introducing a generalization of Jacobi's elliptic functions we transform this equation to a 1-dim time-independent Schroedinger equation with (quasi-doubly) periodic potential. We show that only for a finite set of integral values for the five parameters quasi-doubly periodic eigenfunctions expressible in terms of generalized Jacobi functions exist. For this purpose we also establish a relation to the generalized Ince equation.Comment: 15 pages,1 table, accepted for publication in Journal of Physics