Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition

We report on epitaxial lateral overgrowth (ELO) of (112¯0) a-plane GaN by metalorganic chemical vapor deposition. Different growth rates of Ga- and N-polar wings together with wing tilt create a major obstacle for achieving a smooth, fully coalesced surface in ELOa-plane GaN. To address this issue a two-step growth method was employed to provide a large aspect ratio of height to width in the first growth step followed by enhanced lateral growth in the second by controlling the growth temperature. By this method, the average ratio of Ga- to N-polar wing growth rate has been reduced from 4–6 to 1.5–2, which consequently reduced the wing-tilt induced height difference between the two approaching wings at the coalescence front, thereby making their coalescence much easier. Transmission electron microscopy showed that the threading dislocation density in the wing regions was 1.0×108 cm−2, more than two orders of magnitude lower than that in the window regions (4.2×1010 cm−2). However, a relatively high density of basal stacking faults of 1.2×104 cm−1 was still present in the wing regions as compared to c -plane GaN, where they are rarely observed away from the substrate. Atomic force microscopy(AFM) measurements showed two orders of magnitude higher density of surface pits in the window than in the wing regions, which were considered to be terminated by dislocations (partial ones related to stacking faults and full ones) on the surface. The existence of basal stacking faults was also revealed by AFM measurements on the a-plane ELO sample after wet chemical etching in hot H3PO4∕H2SO4 (1:1). The extensions of Ga-polar wings near the meeting fronts were almost free of stacking faults. The improvement of crystalline quality in the overgrown layer by ELO was also verified by near field scanning optical microscopy and time-resolved photoluminescence measurements; the former showing strongly enhanced luminescence from the wing regions, and the latter indicating longer decay times (0.25 ns) compared to a standard a-plane GaN template (40 ps)

Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature

AlGaN/GaN heterojunction field effect transistors (HFETs) with 2 μm gate length were subjected to on-state-high-field (high drain bias and drain current) and reverse-gate-bias (no drain currentand reverse gate bias) stress at room and elevated temperatures for up to 10 h. The resulting degradation of the HFETs was studied by direct current and uniquely phase noise before and after stress. A series of drain and gate voltages was applied during the on-state-high-field and reverse-gate-bias stress conditions, respectively, to examine the effect of electric field on degradation of the HFET devices passivated with SiNx. The degradation behaviors under these two types of stress conditions were analyzed and compared. In order to isolate the effect of self-heating/temperature on device degradation, stress experiments were conducted at base plate temperatures up to 150 °C. It was found that the electric field induced by reverse-gate-bias mainly generated trap(s), most likely in the AlGaN barrier, which initially were manifested as generation-recombination (G-R) peak(s) in the phase noise spectra near 103 Hz. Meanwhileelectric field induced by on-state-high-field stress mainly generated hot-electron and hot-phonon effects, which result in a nearly frequency independent increase of noise spectra. The external base plate temperatures promote trap generation as evidenced by increased G-R peak intensities

Anisotropy of free-carrier absorption and diffusivity in m-plane GaN

Polarization-dependent free-carrier absorption (FCA) in bulk m-plane GaN at 1053 nm revealed approximately 6 times stronger hole-related absorption for E⊥c than for E||c probe polarization both at low and high carrier injection levels. In contrast, FCA at 527 nm was found isotropic at low injection levels due to electron resonant transitions between the upper and lower conduction bands, whereas the anisotropic impact of holes was present only at high injection levels by temporarily blocking electron transitions. Carrier transport was also found to be anisotropic under two-photon excitation, with a ratio of 1.17 for diffusivity perpendicular and parallel to the c-axis

The effect of stair case electron injector design on electron overflow in InGaN light emitting diodes

Effect of two-layer (In0.04Ga0.96N and In0.08Ga0.92N) staircase electron injector (SEI) on quantum efficiency of light-emitting-diodes (LEDs) in the context of active regions composed of single and quad 3 nm double heterostructures (DHs) is reported. The experiments were augmented with the first order model calculations of electron overflow percentile. Increasing the two-layer SEI thickness from 4 + 4 nm up to 20 + 20 nm substantially reduced, if not totally eliminated, the electron overflow in single DH LEDs at low injections without degrading the material quality evidenced by the high optical efficiency observed at 15K and room temperature. The improvement in quad 3 nm DH LEDs with increasing SEI thickness is not so pronounced as the influence of SEI is less for thicker active regions, which in and of themselves necessarily thermalize the carriers. (C) 2013 AIP Publishing LLC

Structural and optical quality of GaN grown on Sc2O3/Y2O3/Si(111)

Thick (∼900 nm) GaN layers were grown by molecular beam epitaxy on cost-effective Sc2O3/Y2O3/Si(111) substrates and characterized by x-ray diffraction and photoluminescence. Samples grown in Ga-rich condition show superior structural and optical quality with reduced density of cubic GaN inclusions within the hexagonal matrix and a relatively strong photoluminescence emission at 3.45 eV at 10 K. Cubic inclusions are formed in the initial growth stage and their concentration is reduced with increasing film thickness and after rapid thermal annealing

Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

We report on the growth of and evolution of defects in GaN epilayers having single- and double-layer SiNx nanoporous insertion layers. The SiNx was formed in situ in the growth chamber of an organometallic vapor-phase epitaxy system by simultaneous flow of diluted silane and ammonia. The GaN epilayers and SiNx interlayers were grown on 6H-SiC substrates using three different nucleation layers, namely, low-temperature GaN, high-temperature GaN, and high-temperature AlN nucleation layers. X-ray-diffraction rocking curves and cross-sectional and plan-view transmission electron microscope analyses indicated that a nanoporous SiNx layer can reduce the dislocations density in the GaN overgrown layer to ∼3×108cm−2 range; below this level the defect blocking effect of SiNx would saturate. Therefore the insertion of a second SiNx layer becomes much less effective in reducing dislocations, although it continues to reduce the point defects, as suggested by time-resolved photoluminescence measurements. The insertion of SiNx interlayers was found to improve significantly the mechanical strength of the GaN epilayers resulting in a much lower crack line density

Collaborative Broadcast in O(log log n) Rounds

We consider the multihop broadcasting problem for $n$ nodes placed uniformly at random in a disk and investigate the number of hops required to transmit a signal from the central node to all other nodes under three communication models: Unit-Disk-Graph (UDG), Signal-to-Noise-Ratio (SNR), and the wave superposition model of multiple input/multiple output (MIMO). In the MIMO model, informed nodes cooperate to produce a stronger superposed signal. We do not consider the problem of transmitting a full message nor do we consider interference. In each round, the informed senders try to deliver to other nodes the required signal strength such that the received signal can be distinguished from the noise. We assume sufficiently high node density $\rho= \Omega(\log n)$. In the unit-disk graph model, broadcasting needs $O(\sqrt{n/\rho})$ rounds. In the other models, we use an Expanding Disk Broadcasting Algorithm, where in a round only triggered nodes within a certain distance from the initiator node contribute to the broadcasting operation. This algorithm achieves a broadcast in only $O(\frac{\log n}{\log \rho})$ rounds in the SNR-model. Adapted to the MIMO model, it broadcasts within $O(\log \log n - \log \log \rho)$ rounds. All bounds are asymptotically tight and hold with high probability, i.e. $1- n^{-O(1)}$.Comment: extended abstract accepted for ALGOSENSORS 201

Gravitational hedgehog, stringy hedgehog and stringy sphere

We investigate the solutions of Einstein equations such that a hedgehog solution is matched to different exterior or interior solutions via a spherical shell. In the case where both the exterior and the interior regions are hedgehog solutions or one of them is flat, the resulting spherical shell becomes a stringy shell. We also consider more general matchings and see that in this case the shell deviates from its stringy character.Comment: 11 page

An interaction network of mental disorder proteins in neural stem cells

Mental disorders (MDs) such as intellectual disability (ID), autism spectrum disorders (ASD) and schizophrenia have a strong genetic component. Recently, many gene mutations associated with ID, ASD or schizophrenia have been identified by high-throughput sequencing. A substantial fraction of these mutations are in genes encoding transcriptional regulators. Transcriptional regulators associated with different MDs but acting in the same gene regulatory network provide information on the molecular relation between MDs. Physical interaction between transcriptional regulators is a strong predictor for their cooperation in gene regulation. Here, we biochemically purified transcriptional regulators from neural stem cells, identified their interaction partners by mass spectrometry and assembled a protein interaction network containing 206 proteins, including 68 proteins mutated in MD patients and 52 proteins significantly lacking coding variation in humans. Our network shows molecular connections between established MD proteins and provides a discovery tool for novel MD genes. Network proteins preferentially co-localize on the genome and cooperate in disease-relevant gene regulation. Our results suggest that the observed transcriptional regulators associated with ID, ASD or schizophrenia are part of a transcriptional network in neural stem cells. We find that more severe mutations in network proteins are associated with MDs that include lower intelligence quotient (IQ), suggesting that the level of disruption of a shared transcriptional network correlates with cognitive dysfunction

Persistent Photoconductivity Studies in Nanostructured ZnO UV Sensors

The phenomenon of persistent photoconductivity is elusive and has not been addressed to an extent to attract attention both in micro and nanoscale devices due to unavailability of clear material systems and device configurations capable of providing comprehensive information. In this work, we have employed a nanostructured (nanowire diameter 30–65 nm and 5 μm in length) ZnO-based metal–semiconductor–metal photoconductor device in order to study the origin of persistent photoconductivity. The current–voltage measurements were carried with and without UV illumination under different oxygen levels. The photoresponse measurements indicated a persistent conductivity trend for depleted oxygen conditions. The persistent conductivity phenomenon is explained on the theoretical model that proposes the change of a neutral anion vacancy to a charged state